2019
DOI: 10.1002/admt.201800544
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Memristive Synapses for Brain‐Inspired Computing

Abstract: be precisely regulated by the ionic flow, which is called synaptic plasticity. Generally, there are two types of synaptic plasticity: potentiation and depression. In the case of potentiation or depression, the synaptic weight increases or decreases upon repeated stimulation. Inspired by the human brain, novel non von Neumann computing architectures mainly composed of artificial synapses and artificial neurons have been proposed, which we can call "artificial neural networks," "brain-like computers," or "neurom… Show more

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Cited by 83 publications
(70 citation statements)
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References 188 publications
(240 reference statements)
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“…[57] Then, memristive devices have been extensively studied over the past decade due to their prominent advantages, such as simple structure, high operation speed, and low power consumption in applications of data storage, logic operation, and neuromorphic computation. [11] In addition, the resistive switching behavior can also be classified into volatile and nonvolatile types based on the state retention characteristics. The resistance of memristive device can be reversely changed between low resistive state (LRS) and high resistive state (HRS), resulting in a pinched hysteresis current-voltage (I-V) loop by applying voltage sweeping.…”
Section: Memristive Devicesmentioning
confidence: 99%
“…[57] Then, memristive devices have been extensively studied over the past decade due to their prominent advantages, such as simple structure, high operation speed, and low power consumption in applications of data storage, logic operation, and neuromorphic computation. [11] In addition, the resistive switching behavior can also be classified into volatile and nonvolatile types based on the state retention characteristics. The resistance of memristive device can be reversely changed between low resistive state (LRS) and high resistive state (HRS), resulting in a pinched hysteresis current-voltage (I-V) loop by applying voltage sweeping.…”
Section: Memristive Devicesmentioning
confidence: 99%
“…It is favorable for high‐density integration of synaptic devices. In the case of the sandwich structured device with a transparent electrode, the crossbar array architecture can be used to integrate a huge number of artificial synapses, in which each crosspoint represents a synaptic device . However, sneak paths, an inherent disadvantage of crossbar arrays, will result in an incorrect device conductance readout.…”
Section: Photoelectric Synapsesmentioning
confidence: 99%
“…Furthermore, the size of a crossbar array, i.e., maximum numbers of rows and columns, is severely limited by the existence of sneak paths . Several techniques can be adopted to address the sneak path problem such as nonlinear or self‐rectifying resistance‐switching behavior of synaptic devices and integrating a transistor with each synapse …”
Section: Photoelectric Synapsesmentioning
confidence: 99%
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