2015
DOI: 10.1007/978-3-319-22647-7_5
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Memristive Crossbar-Based Nonvolatile Memory

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Cited by 9 publications
(2 citation statements)
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“…Memristance is conceptually defined as the derivative of flux with respect to electric charge, but it is commonly explained as a resistance that depends on the previous history of the electric charge that passes through it. There are different types of memristors: bipolar or unipolar, filamentary or homogeneous switching [8]. For instance, in the resistive RAM (ReRAM) device assumed in this paper, the change in its memristance is attributed to the creation or destruction of one or more conductive filaments inside the metal-insulatormetal device structure (in line with the soft breakdown of an oxide intermediate layer).…”
Section: Memristor Fundamentals In Briefmentioning
confidence: 99%
“…Memristance is conceptually defined as the derivative of flux with respect to electric charge, but it is commonly explained as a resistance that depends on the previous history of the electric charge that passes through it. There are different types of memristors: bipolar or unipolar, filamentary or homogeneous switching [8]. For instance, in the resistive RAM (ReRAM) device assumed in this paper, the change in its memristance is attributed to the creation or destruction of one or more conductive filaments inside the metal-insulatormetal device structure (in line with the soft breakdown of an oxide intermediate layer).…”
Section: Memristor Fundamentals In Briefmentioning
confidence: 99%
“…Chua's theory of the memristor was however connected with experimental devices only in 2008 by Hewlett-Packard Laboratories and their work on TiO2 RS devices [6]. Memristors are now considered a rapidly emerging technology [7] that creates opportunities to realize innovative circuits and systems with applications such as nonvolatile memory [8], [9], adaptive circuits [10], [11], signal processing [12], and logic/computing [13][14][15].…”
Section: Introductionmentioning
confidence: 99%