2017 Fifth Berkeley Symposium on Energy Efficient Electronic Systems &Amp; Steep Transistors Workshop (E3S) 2017
DOI: 10.1109/e3s.2017.8246178
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Memristive Boltzmann machine: A hardware accelerator for combinatorial optimization and deep learning

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Cited by 17 publications
(19 citation statements)
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“…Moreover, the area required to implement the RC circuit with 100 K Ω resistor and 20f F capacitor is approximately three times larger than that of the MRAM-based neuron [Scott 1998;Stengel and Spaldin 2006]. Thus, the proposed MRAM-based activation function can achieve approximately 20× and 300× area reduction compared to the CMOS-based stochastic neurons proposed in [Ardakani et al 2017] and [Bojnordi and Ipek 2016], respectively. The area of the MRAM-based neuron, which is utilized as the baseline for the area comparisons, is approximately equal to 32λ × 32λ, that is obtained by the layout design, in which λ is a technology-dependent parameter.…”
Section: Discussionmentioning
confidence: 98%
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“…Moreover, the area required to implement the RC circuit with 100 K Ω resistor and 20f F capacitor is approximately three times larger than that of the MRAM-based neuron [Scott 1998;Stengel and Spaldin 2006]. Thus, the proposed MRAM-based activation function can achieve approximately 20× and 300× area reduction compared to the CMOS-based stochastic neurons proposed in [Ardakani et al 2017] and [Bojnordi and Ipek 2016], respectively. The area of the MRAM-based neuron, which is utilized as the baseline for the area comparisons, is approximately equal to 32λ × 32λ, that is obtained by the layout design, in which λ is a technology-dependent parameter.…”
Section: Discussionmentioning
confidence: 98%
“…On the other hand, emerging technologies such as resistive RAM (RRAM) and phase change memory (PCM) have been recently utilized within the crossbar arrays to implement matrix multiplication within RBMs [Bojnordi and Ipek 2016;Eryilmaz et al 2016;Sheri et al 2015]. In particular, [Bojnordi and Ipek 2016] has achieved 100× and 10× improvement in terms of operation speed and energy consumption, respectively, compared to single-threaded cores by using RRAM devices as weighted connections.…”
Section: Discussionmentioning
confidence: 99%
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“…Hamdioui et al [57] introduced CIM, a memristor based computation in memory architecture. Bojnordi and Ipek [58] introduced the Memristive Boltzmann machine, a hardware accelerator for combinatorial optimization and deep learning. Imani et al [59] introduced APIM, an approximate processing in-memory architecture which exploits the analog characteristics of resistive memory to support addition and multiplication inside the crossbar.…”
Section: Processing-in-resistive Memorymentioning
confidence: 99%
“…Most of the previous DBN research has focused on software implementations, which provides flexibility, but requires significant execution time and energy due to large matrix multiplications that are relatively inefficient when implemented on standard Von-Neumann architectures. Previous hardware-based implementation of RBM have sought to overcome software limitations by using FPGAs [11], [12], stochastic CMOS [13], and hybrid memristor-CMOS designs [14]. Recently, Zand et al [15] utilized a spintronic device that leverages intrinsic thermal noise within low energy barrier nanomagnets to provide a natural building block for RBMs.…”
Section: Introductionmentioning
confidence: 99%