Abstract:We demonstrate n-type ferroelectric field-effect transistors (FeFETs) employing atomic-layer-deposited HfZrOx (HZO) films with a large memory window (MW) immediately after the write operation. Charge trapping at the HZO/Si interface in FeFETs is the primary source of memory window reduction. To control the properties of the interfacial layer, we varied the O3 injection time during atomic layer deposition. The HZO (long O3 of 7 s)-based FeFET demonstrated a large MW (2.1 V) in the DC transfer curves compared wi… Show more
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