Memory update characteristics of carbon nanotube memristors (NRAM^®) under circuitry-relevant operation conditions

DNA aerogels and DNA-wrapped CNT aerogels for neuromorphic applications

“…The typical IV curve of memristors is a hysteresis pinch reflective of the resistive switching behavior [ 40 ]. Here, integral memristance is observed because low-resistive state (LRS) and high-resistive state (HRS) are calculated relative to the particular train of pulses in one polarity and the aerogel plays the role of resistance-change memory devices [ 41 ]. The first pinch (red) in rainbow plots of Fig.…”