Memory effect of sol–gel derived V-doped SrZrO3 thin films

Liu, Chih Yi; Chuang, Chun Chieh; Chen, Jian Shian; Wang, Arthur; Jang, Wen Yueh; Young, Jien Chen; Chiu, K.Y.; Tseng, Tseung‐Yuen

doi:10.1016/j.tsf.2005.08.153

Cited by 16 publications

(12 citation statements)

References 5 publications

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“…8, one can see that the retention time of 10 5 s has been demonstrated for the HRS and LRS without obvious degradation, while the information storages in this device cells are likely to persist for an even longer time judging from the present trend of data. According to the stable RS performance, low operation voltage and the improved R OFF /R ON ratio by comparison, the BCFMO thin films are appropriate as the switching layer for RRAM devices.…”

Section: Various Concentrations Ofmentioning

confidence: 73%

“…[1][2][3][4] And furthermore, varieties of materials presenting resistive switching (RS) characteristics have been found, including transition metal oxide materials which are compatible with present semiconductor manufacturing processes, such as TiO 2 , ZrO 2 , Cu x O, ZnO, HfO 2 , perovskites such as SrTiO 3 , Pr 0.7 Ca 0.3 MnO 3 , and organic material as well as silicon oxide etc. [5][6][7][8][9][10][11][12][13] To understand RS mechanism, a lot of models have been presented and studied intensively. Usually, the RS mechanisms are mainly divided into two categories, including bulk effect and interface effect using defects or trapped carriers, oxygen vacancies migrating.…”

Section: Introductionmentioning

confidence: 99%

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Resistive switching properties of Ce and Mn co-doped BiFeO3 thin films for nonvolatile memory application

et al. 2013

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The Ce and Mn co-doped BiFeO3 (BCFMO) thin films were synthesized on Pt/Ti/SiO2/Si substrates using a sol-gel method. The unipolar resistive switching (URS) and bipolar resistive switching (BRS) behaviors were observed in the Pt/BCFMO/Pt device structure, which was attributed to the formation/rupture of metal filaments. The fabricated device exhibits a large ROFF/RON ratio (>80), long retention time (>105 s) and low programming voltages (<1.5 V). Analysis of linear fitting current-voltage curves suggests that the space charge limited leakage current (SCLC) and Schottky emission were observed as the conduction mechanisms of the devices.

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Section: Various Concentrations Ofmentioning

confidence: 73%

Section: Introductionmentioning

confidence: 99%

Resistive switching properties of Ce and Mn co-doped BiFeO3 thin films for nonvolatile memory application

et al. 2013

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“…Liu et al prepared their SZO:Cr films by rf-magnetron sputter on LaNiO 3 (LNO) bottom electrode and SiO 2 -Si substrate, which is applicable to commercial high-density RRAM devices. Even the SZO:V RRAM by sol-gel method was reported [27]. Figure 3 shows the Obviously an almost symmetric I-V curve was obtained for SZO RRAM, unlike that of PCMO.…”

Section: Electrical Propertiesmentioning

confidence: 96%

Preparation and Properties of Perovskite Thin Films for Resistive Nonvolatile Memory Applications

Lai

Tseng

2007

Ferroelectrics

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Various perovskite structure electroceramic thin films have been studied for semiconductor memory applications. The high permittivity and ferroelectric remanent polarization properties of these materials give the promise of a new generation of advanced dynamic and/or nonvolatile memory devices. The recent study indicates that perovskite oxide showing bistable resistance switching behavior is a highly promising candidate for nonvolatile semiconductor device, the so-called resistance random access memory (RRAM). RRAMs exhibit sufficiently fast switching capability and low operation voltages as compared with flash memory, and bring about the current upsurge in research. This paper summarizes the fabrication and characterization of these potential materials, and provides a broad view of the current status and future trends for perovskite oxides-based RRAMs. The associated conduction mechanisms are also discussed with specific examples from recent literature.

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“…Another critical parameter on the synthesis process of resistive switching devices is the metal salt precursors, which are subdivided into three counter anions groups; [ 100 ] oxidants (hydrated nitrates), [ 72,79,80,98,101–121 ] reducers (alkoxides, [ 117,122–125 ] acetates, [ 72,76,78,79,104,105,109,111,113–118,126–153 ] and acetylacetonates [ 81,134,144,154–157 ] ), and neutrals (chlorine‐based). [ 63,71,103,107,110,112,116,119,125,132,158–164 ] Among these, oxidant counter ions are preferable due to the high oxidizing power (negative charge), greater solubility in water or polar organic solvents and low decomposition temperature, which are related to the electronic interactions between the metal and the nitrate group, as shown in Figure 9c.…”

Section: Fundamentals Of Solution‐based Metal Oxide Rramsmentioning

confidence: 99%

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

et al. 2020

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Metal oxide resistive switching memories have been a crucial component for the requirements of the Internet of Things, which demands ultra‐low power and high‐density devices with new computing principles, exploiting low cost green products and technologies. Most of the reported resistive switching devices use conventional methods (physical and chemical vapor deposition), which are quite expensive due to their up‐scale production. Solution‐processing methods have been improved, being now a reliable technology that offers many advantages for resistive random‐access memory (RRAM) such as high versatility, large area uniformity, transparency, low‐cost and a simple fabrication of two‐terminal structures. Solution‐based metal oxide RRAM devices are emergent and promising non‐volatile memories for future electronics. In this review, a brief history of non‐volatile memories is highlighted as well as the present status of solution‐based metal oxide resistive random‐access memory (S‐RRAM). Then, a focus on describing the solution synthesis parameters of S‐RRAMs which induce a massive influence in the overall performance of these devices is discussed. Next, a precise analysis is performed on the metal oxide thin film and electrode interface and the recent advances on S‐RRAM that will allow their large‐area manufacturing. Finally, the figures of merit and the main challenges in S‐RRAMs are discussed and future trends are proposed.

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Memory effect of sol–gel derived V-doped SrZrO3 thin films

Cited by 16 publications

References 5 publications

Resistive switching properties of Ce and Mn co-doped BiFeO3 thin films for nonvolatile memory application

Resistive switching properties of Ce and Mn co-doped BiFeO3 thin films for nonvolatile memory application

Preparation and Properties of Perovskite Thin Films for Resistive Nonvolatile Memory Applications

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

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