Memory characteristics of Al2O3/La2O3/Al2O3 multi-layer films with various blocking and tunnel oxide thicknesses

Kim, Hyo June; Yong, Seung Hyun; Choi, Doo Jin

doi:10.1016/j.mssp.2010.01.002

Cited by 22 publications

(9 citation statements)

References 8 publications

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“…This means that a three-gas line (two sources line + one oxygen line) can make three layers. In order to investigate charge trap characteristics with various thicknesses of blocking and tunnel oxides for application to nonvolatile memory devices, Kim et al , fabricated two multi-stack films, respectively [49]. One is Al 2 O 3 (5 and 15 nm)/La 2 O 3 (5 nm)/Al 2 O 3 (5 nm).…”

Section: Recent Developmentsmentioning

confidence: 99%

Review on Non-Volatile Memory with High-k Dielectrics: Flash for Generation Beyond 32 nm

et al. 2014

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Flash memory is the most widely used non-volatile memory device nowadays. In order to keep up with the demand for increased memory capacities, flash memory has been continuously scaled to smaller and smaller dimensions. The main benefits of down-scaling cell size and increasing integration are that they enable lower manufacturing cost as well as higher performance. Charge trapping memory is regarded as one of the most promising flash memory technologies as further down-scaling continues. In addition, more and more exploration is investigated with high-k dielectrics implemented in the charge trapping memory. The paper reviews the advanced research status concerning charge trapping memory with high-k dielectrics for the performance improvement. Application of high-k dielectric as charge trapping layer, blocking layer, and tunneling layer is comprehensively discussed accordingly.

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Section: Recent Developmentsmentioning

confidence: 99%

Review on Non-Volatile Memory with High-k Dielectrics: Flash for Generation Beyond 32 nm

et al. 2014

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“…7 This value is much larger than those for the Al 2 O 3 / La 2 O 3 /Al 2 O 3 (0.5 eV), Al 2 O 3 /HfO 2 /Al 2 O 3 (1.3 eV), and Al 2 O 3 /ZrO 2 /Al 2 O 3 (0.85 eV) multilayers [13][14][15]. 7,16 The bandgap of Nb 2 O 5 (4.3 eV) is similar to Ta 2 O 5 (4.4 eV).…”

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confidence: 89%

Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors

Nabatame

Ohi

Ito

et al. 2014

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inConduction processes in metal-insulator-metal diodes with Ta2O5 and Nb2O5 insulators deposited by atomic layer deposition J. Vac. Sci. Technol. A 32, 01A122 (2014); 10.1116/1.4843555 Al 2 O 3 / NbAlO / Al 2 O 3 sandwich gate dielectric film on InP Appl. Phys. Lett. 96, 022904 (2010); 10.1063/1.3292217 Thermally stable amorphous ( Al Mo Nb Si Ta Ti V Zr ) 50 N 50 nitride film as diffusion barrier in copper metallization Appl. Phys. Lett. 92, 052109 (2008); 10.1063/1.2841810Low temperature crystallization of high permittivity Ta oxide using an Nb oxide thin film for metal/insulator/metal capacitors in dynamic random access memory applications The authors studied the characteristics of Si/Al 2 O 3 /(Ta/Nb)O x /Al 2 O 3 /SiO 2 /Pt charge trap capacitors fabricated by atomic layer deposition and postmetallization annealing at 400 C. Al 2 O 3 and (Ta/Nb)O x films are amorphous and have negligible fixed charges. In program mode, a flatband voltage (V fb ) drastically shifts toward the positive direction at a short program time of 10 À4 s. A large V fb shift of approximately 4 V arises after programming at 1 mC/cm 2 because there is a large difference in the conduction band offset between the (Ta/Nb)O x -charge trapping layer (TNO-CTL) and the Al 2 O 3 -blocking layer (AlO-BL) (1.8 eV). In the retention mode, most of the trapped electrons in the TNO-CTL transfers across the Al 2 O 3 -tunneling layer (AlO-TL) rather than the AlO-BL. The thickness of the AlO-TL affects the V fb shift degradation behavior in the retention mode. The injected electrons are dominantly located at the TNO-CTL/ALO-BL interface, determined from the thickness dependence of the TNO-CTL on the V fb shift.

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“…[1][2][3] Many high-K dielectrics, especially rare-earth metal oxide materials, e.g. Pr 2 O 3 (~15), 4 Nd 2 O 3 (~16), 4 Er 2 O 3 (~13), 4 and La2O3 (~27), 5 have been investigated as charge-trapping layer (CTL) due to their moderately high dielectric constant, wide bandgap and good electrical properties. 6 Among these dielectric materials, La2O3 is a promising one due to its large dielectric constant, thermodynamic compatibility with Si, and deep-level traps.…”

Section: Introductionmentioning

confidence: 99%

“…7 However, it has been reported that MONOS memory with La 2 O 3 as CTL possesses a relatively small window due to its low trap density. 5 Recently, MoO x has been proposed as the charge trapping site for nanocrystal memory and resulted in good memory performances, such as low operating voltage and good charge retention. 8,9 However, for practical applications, uniform deposition or self-assembly of small nanocrystals is a necessary condition.…”

Section: Introductionmentioning

confidence: 99%

Mo-Doped La2O3 as Charge-Trapping Layer for Improved Low-Voltage Flash-Memory Performance

Lai

2013

ECS Solid State Letters

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To utilize the negative conduction-band offset of high-K MoO 3 with respect to Si, the memory characteristics of high-K La 2 O 3 with and without Mo doping as chargetrapping layer were investigated. The cross-sectional structure of the memory was studied by transmission electron microscopy, and the chemical composition of the charge-trapping layer was investigated by X-ray photoelectron spectroscopy. Compared to the memory with pure La 2 O 3 , the one with Mo-doped La 2 O 3 had a significantly large C-V hysteresis window, much higher programming/erasing speeds and better charge retention because the Mo doping introduced many deeper-level traps and the LaMoO charge-trapping layer provided deeper quantum wells.

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Memory characteristics of Al2O3/La2O3/Al2O3 multi-layer films with various blocking and tunnel oxide thicknesses

Cited by 22 publications

References 8 publications

Review on Non-Volatile Memory with High-k Dielectrics: Flash for Generation Beyond 32 nm

Review on Non-Volatile Memory with High-k Dielectrics: Flash for Generation Beyond 32 nm

Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors

Mo-Doped La2O3 as Charge-Trapping Layer for Improved Low-Voltage Flash-Memory Performance

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