Medium-Voltage Drives

Hiller, Marc; Sommer, Rainer; Beuermann, Max

doi:10.1109/mias.2009.935494

Cited by 39 publications

(5 citation statements)

References 3 publications

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“…This is lumped into an inductance termed as equivalent gate inductance (L g, eq)' This makes the gate circuit a second-order one as shown by Fig. 9(a) related to the parameters R g, on, GCE and L g, eq as shown in (2). The I g reaches its peak value at t = tmaxl which is given by (3), where the tangent function is approximated by the first two terms in its series expansion.…”

Section: Determinat Ion Of L G Eqmentioning

confidence: 99%

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Study on gate characteristics and drive circuit for 300A/1200V insulated gate bipolar transistors

Babu¹,

Narayanan

2014

2014 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT)

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This paper presents the design and testing of a gate drive circuit for two parallel-connected 300AI1200V insulated gate bipolar transistors (IGBTs), meant for a 200-kVA voltage source converter. The drive circuit is tested under normal as well as fault conditions. The drive circuit performance is shown to be affected by the parasitic inductance in the gate circuitry. A procedure for estimating the equivalent gate inductance based on the measured switching characteristics is presented. The de pendence of the Miller plateau voltage in the gate characteristics on the gate resistance and the magnitude of current switched is studied experimentally. The effect of off-state gate voltage on the switching characteristics is also studied experimentally. A procedure to determine the safe minimum negative-bias gate voltage is indicated.

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Section: Determinat Ion Of L G Eqmentioning

confidence: 99%

“…Insulated Gate Bipolar Transistors (IGBTs) are being used in power electronic converters of capacities extending up to a few megawatts [1], [2] . Reliable operation of the power converter depends on the reliable switching operation of IGBTs which, in turn, depends on the gate drive circuit [3]- [6].…”

Section: Introductionmentioning

confidence: 99%

Study on gate characteristics and drive circuit for 300A/1200V insulated gate bipolar transistors

Babu¹,

Narayanan

2014

2014 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT)

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“…State-of-the-art three-phase switch-mode inverters are widely applied, mainly as supplies to various types of electric motors, from induction machines to permanent magnet ones [1]- [6]. Doubtless, in most cases currently available silicon power semiconductors meet the application requirements regarding efficiency, reliability, and cost.…”

Section: Introductionmentioning

confidence: 99%

Design Steps Toward a 40-kVA SiC JFET Inverter With Natural-Convection Cooling and an Efficiency Exceeding 99.5%

Rąbkowski

Peftitsis

Nee

2013

IEEE Trans. on Ind. Applicat.

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This is an author produced version of a paper published in IEEE Transactions on Industry Applications . This paper has been peer-reviewed but does not include the final publisher proof-corrections or proceedings pagination.© 2013 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

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“…Also, the available ratings of insulated gate bi-polar junction transistors (IGBT) are fast increasing (Krug et al 2007). Currently IGBTs with blocking voltages of up to 6.5 kV are available (Hiller et al 2010). With these high-voltage IGBTs, the VSC topology can be used up to a few tens of megawatt (Hiller et al 2010).…”

Section: Introductionmentioning

confidence: 99%

“…Currently IGBTs with blocking voltages of up to 6.5 kV are available (Hiller et al 2010). With these high-voltage IGBTs, the VSC topology can be used up to a few tens of megawatt (Hiller et al 2010).…”

Section: Introductionmentioning

confidence: 99%

Apparatus and method for heat-run test on high-power PWM converters with low energy expenditure

Prasad

Narayanan

2013

Sadhana

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Before installation, a voltage source converter is usually subjected to heat-run test to verify its thermal design and performance under load. For heat-run test, the converter needs to be operated at rated voltage and rated current for a substantial length of time. Hence, such tests consume huge amount of energy in case of high-power converters. Also, the capacities of the source and loads available in the research and development (R&D) centre or the production facility could be inadequate to conduct such tests. This paper proposes a method to conduct heat-run tests on highpower, pulse width modulated (PWM) converters with low energy consumption. The experimental setup consists of the converter under test and another converter (of similar or higher rating), both connected in parallel on the ac side and open on the dc side. Vector-control or synchronous reference frame control is employed to control the converters such that one draws certain amount of reactive power and the other supplies the same; only the system losses are drawn from the mains. The performance of the controller is validated through simulation and experiments. Experimental results, pertaining to heat-run tests on a high-power PWM converter, are presented at power levels of 25 kVA to 150 kVA.

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Medium-Voltage Drives

Cited by 39 publications

References 3 publications

Study on gate characteristics and drive circuit for 300A/1200V insulated gate bipolar transistors

Study on gate characteristics and drive circuit for 300A/1200V insulated gate bipolar transistors

Design Steps Toward a 40-kVA SiC JFET Inverter With Natural-Convection Cooling and an Efficiency Exceeding 99.5%

Apparatus and method for heat-run test on high-power PWM converters with low energy expenditure

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