Abstract:This paper presents the design and testing of a gate drive circuit for two parallel-connected 300AI1200V insulated gate bipolar transistors (IGBTs), meant for a 200-kVA voltage source converter. The drive circuit is tested under normal as well as fault conditions. The drive circuit performance is shown to be affected by the parasitic inductance in the gate circuitry. A procedure for estimating the equivalent gate inductance based on the measured switching characteristics is presented. The de pendence of the Mi… Show more
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