Mechanisms of self-ordering in nonplanar epitaxy of semiconductor nanostructures

Biasiol, G.; Gustafsson, Anders; Leifer, Klaus; Kapon, E.

doi:10.1103/physrevb.65.205306

Cited by 125 publications

(123 citation statements)

References 40 publications

Supporting

Mentioning

111

Contrasting

Order By: Relevance

“…This requires reshaping of the pattern during growth of the buffer and barrier layers with considerable thickness for well-defined QWire and QDot formation and stacking in multilayers. 8,9 In addition, the sidewalls easily break up into microfacets leading to undesired size fluctuations of the QWires and QDots. Most of the studies have been performed in the ͑Al, Ga͒As/ GaAs ͑100͒ material system.…”

Section: Introductionmentioning

confidence: 99%

(In,Ga)As sidewall quantum wires on shallow-patterned InP (311)A

Zhou

Nötzel

Gong

et al. 2005

Journal of Applied Physics

View full text Add to dashboard Cite

Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication Citation for published version (APA):Zhou, D., Nötzel, R., Gong, Q., Offermans, P., Koenraad, P. M., Veldhoven, van, P. J., .. General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. ͑In,Ga͒As sidewall quantum wires ͑QWires͒ are realized by chemical beam epitaxy along ͓01-1͔ mesa stripes on shallow-patterned InP ͑311͒A substrates. The QWires exhibit strong lateral carrier confinement due to larger thickness and In composition compared to the adjacent quantum wells, as determined by cross-sectional scanning-tunneling microscopy and microphotoluminescence ͑micro-PL͒ spectroscopy. The PL of the ͑In,Ga͒As QWires with InP and quaternary ͑Ga,In͒͑As,P͒ barriers reveals narrow linewidth, high efficiency, and large lateral carrier confinement energies of 60-70 meV. The QWires are stacked in growth direction with identical PL peak emission energy. The PL emission energy is not only controlled by the ͑In,Ga͒As layer thickness but also by the patterned mesa height. Stacked ͑In,Ga͒As QWires with quaternary barriers exhibit room temperature PL emission at 1.55 m in the technologically important wavelength region for telecommunication applications.

show abstract

Section: Introductionmentioning

confidence: 99%

(In,Ga)As sidewall quantum wires on shallow-patterned InP (311)A

Zhou

Nötzel

Gong

et al. 2005

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…As a result, the bound state for electrons (holes) will be shifted up (down), closer to the continuum. Since shell-QDs result from the diffusion process already mentioned, 31 it is reasonable to assume that smaller QDs also have shallower potential depth, due to higher Al content, increasing the effect further. For these reasons, luminescence from QDs smaller than 4 nm is not expected.…”

mentioning

confidence: 99%

“…29,30 These corner features form during the shell deposition as a consequence of the inhomogeneous surface energy of the core facets, which sets element-dependent capillarity fluxes of the adatoms. 31 The corners show increased surface energy by reason of a more pronounced curvature and the presence of (112) nanofacets of higher Miller indices. Since Al shows a lower mobility than Ga, it segregates in the positions of higher energy.…”

mentioning

confidence: 99%

Quantum dots in the GaAs/AlxGa1−xAs core-shell nanowires: Statistical occurrence as a function of the shell thickness

Francaviglia

Fontana

Conesa‐Boj

et al. 2015

Applied Physics Letters

View full text Add to dashboard Cite

Quantum dots (QDs) embedded in nanowires represent one of the most promising technologies for applications in quantum photonics. Self-assembled bottom-up fabrication is attractive to overcome the technological challenges involved in a top-down approach, but it needs post-growth investigations in order to understand the self-organization process. We investigate the QD formation by selfsegregation in Al x Ga 1Àx As shells as a function of thickness and cross-section morphology. By analysing light emission from several hundreds of emitters, we find that there is a certain thickness threshold for the observation of the QDs. The threshold becomes smaller if a thin AlAs layer is pre-deposited between the GaAs nanowire core and the Al x Ga 1Àx As shell. Our results evidence the development of the quantum emitters during the shell growth and provide more guidance for their use in quantum photonics. V C 2015 AIP Publishing LLC. [http://dx

show abstract

“…The QDs are selfformed at the inverted tip of the tetrahedral recesses due to decomposition rate anisotropies ͑which lead to growth rate anisotropies͒ and capillarity effects. 16,17 Alloy segregation in the barrier lowers the Al concentration in the vicinity of the QD. In particular, a vertical quantum wire ͑VQWR͒ with low Al concentration ͑ϳ4%͒ and a diameter of 16 nm is selfformed in the center of the pyramid ͑see Fig.…”

Section: Methodsmentioning

confidence: 99%

Phonon replicas of charged and neutral exciton complexes in single quantum dots

et al. 2010

View full text Add to dashboard Cite

The longitudinal-optical ͑LO͒-phonon coupling is experimentally examined by the optical decay of various charged and neutral exciton species in single quantum dots, and the related Huang-Rhys parameters are extracted. A positive trion exhibits significantly weaker LO-phonon replicas in the photoluminescence spectrum than the neutral and negatively charged species. Model computations show that the strength of the replicas is determined by the Coulomb interactions between electrons and holes, which modify the localization of the envelope wave functions and the net charge distribution.

show abstract

Mechanisms of self-ordering in nonplanar epitaxy of semiconductor nanostructures

Cited by 125 publications

References 40 publications

(In,Ga)As sidewall quantum wires on shallow-patterned InP (311)A

(In,Ga)As sidewall quantum wires on shallow-patterned InP (311)A

Quantum dots in the GaAs/AlxGa1−xAs core-shell nanowires: Statistical occurrence as a function of the shell thickness

Phonon replicas of charged and neutral exciton complexes in single quantum dots

Contact Info

Product

Resources

About