Mechanisms of reactive sputtering of titanium nitride and titanium carbide II: Morphology and structure

Sundgren, J.‐E.; Johansson, B.‐O.; Karlsson, Susanne; Hentzell, H. T. G.

doi:10.1016/0040-6090(83)90319-x

Cited by 266 publications

(53 citation statements)

References 38 publications

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“…For the latter, hardness did indeed exhibit a slight correlation with stoichiometry, and declined by roughly 15-20% while decreasing the C/Ti ratio to ~0.5. However, these values are still higher than the TiB values described by Lipatnikov et al and Sundgren et al [46,47]. The decrease in measured hardness of the composite TMC-C could be explained by the generally lower total content of particle reinforcement of only 10 vol.-%.…”

Section: Structural Characterizationcontrasting

confidence: 50%

Characterization of In-Situ TiB/TiC Particle-Reinforced Ti-5Al-5Mo-5V-3Cr Matrix Composites Synthesized by Solid-State Reaction with B4C and Graphite through SPS

Grützner

Krüger

Radajewski

et al. 2018

Metals

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Abstract:In-situ TiB/TiC particle-reinforced titanium matrix composites (TMCs) based on a near-β Ti-5Al-5Mo-5V-3Cr alloy (Ti-5553) were synthesized by solid-state reaction with B 4 C and graphite particles during spark plasma sintering (SPS). In this study, investigations were focused on the influence of the molar TiB:TiC ratio on the mechanical properties of the composites. With respect to the adjustment of the molar TiB:TiC ratio, the formation of stoichiometric TiC or nonstoichiometric TiC y was considered as the literature provides conflicting information in this respect. Furthermore, the solid-state reaction behavior influenced by the matrix alloying elements is discussed in comparison to a pure titanium matrix. The hardness, compressive strength and bending strength of the TMCs were improved successfully due to the TiB and TiC particles maintaining acceptable levels of ductility. However, X-ray diffraction experiments revealed that for the adjustment of the molar TiB:TiC ratio, the stoichiometry of the TiC y particles formed must be considered as nonstoichiometric TiC 0.5 resulted from the solid-state reaction of carbon and titanium. Compared to TMCs with pure titanium matrices, more sluggish solid-state reaction kinetics were observed. This was attributed to the matrix alloying elements molybdenum, vanadium and chromium, which formed solid solutions within the reinforcing particles.

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Section: Structural Characterizationcontrasting

confidence: 50%

Characterization of In-Situ TiB/TiC Particle-Reinforced Ti-5Al-5Mo-5V-3Cr Matrix Composites Synthesized by Solid-State Reaction with B4C and Graphite through SPS

Grützner

Krüger

Radajewski

et al. 2018

Metals

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“…Cross-sectional electron micrographs reveal that sputtered stoichiometric polycrystalline TiN grows with a dense columnar structure classified as zone T in the SZM. At a Ti/N ratio of one, TiN films have the full bulk density of 5.39 g cm -1 and exhibit a minimum electrical resistivity of 25 µΩ cm [75]. Similarly, the lattice parameter reaches its maximum value of 4.242 Å at the stoichiometric composition and decreases for both over-and understoichiometric films [74,75].…”

Section: Composition Structure and Mechanical Propertiesmentioning

confidence: 91%

“…At a Ti/N ratio of one, TiN films have the full bulk density of 5.39 g cm -1 and exhibit a minimum electrical resistivity of 25 µΩ cm [75]. Similarly, the lattice parameter reaches its maximum value of 4.242 Å at the stoichiometric composition and decreases for both over-and understoichiometric films [74,75]. As discussed in chapter 3, the microstructure of sputtered TiN can also be controlled by using different substrate materials.…”

Section: Composition Structure and Mechanical Propertiesmentioning

confidence: 92%

“…This effect is even more pronounced in thin films, since they are normally deposited under non-equilibrium conditions [74]. One of the earliest comprehensive investigations of sputtered TiN coatings was carried out by Sundgren et al [68,[74][75][76]. They determined that the ratio of reactive to sputtering gas as well as the ion current density at the substrate and the voltage applied to the target are the most influential process parameters dictating the TiN film composition [68].…”

Section: Composition Structure and Mechanical Propertiesmentioning

confidence: 99%

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High-resolution characterization of TiN diffusion barrier layers

Mühlbacher¹

2015

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Titanium nitride (TiN) films are widely applied as diffusion barrier layers in microelectronic devices. The continued miniaturization of such devices not only poses new challenges to material systems design, but also puts high demands on characterization techniques. To gain understanding of diffusion processes that can eventually lead to failure of the barrier layer and thus of the whole device, it is essential to develop routines to chemically and structurally investigate these layers down to the atomic scale. In the present study, model TiN diffusion barriers with a Cu overlayer acting as the diffusion source were grown by reactive magnetron sputtering on MgO(001) and thermally oxidized Si(001) substrates. Cross-sectional transmission electron microscopy (XTEM) of the pristine samples revealed epitaxial, single-crystalline growth of TiN on MgO(001), while the polycrystalline TiN grown on Si(001) exhibited a [001]-oriented columnar microstructure. Various annealing treatments were carried out to induce diffusion of Cu into the TiN layer. Subsequently, XTEM images were recorded with a high-angle annular dark field detector, which provides strong elemental contrast, to illuminate the correlation between the structure and the barrier efficiency of the single- and polycrystalline TiN layers. Particular regions of interest were investigated more closely by energy dispersive X-ray (EDX) mapping. These investigations are completed by atom probe tomography (APT) studies, which provide a three-dimensional insight into the elemental distribution at the near-interface region with atomic chemical resolution and high sensitivity. In case of the single-crystalline barrier, a uniform Cu-enriched diffusion layer of 12 nm could be detected at the interface after an annealing treatment at 1000 °C for 12 h. This excellent barrier performance can be attributed to the lack of fast diffusion paths such as grain boundaries. Moreover, density-functional theory calculations predict a stoichiometry-dependent atomic diffusion mechanism of Cu in bulk TiN, with Cu diffusing on the N-sublattice for the experimental N/Ti ratio. In comparison, the polycrystalline TiN layers exhibited grain boundaries reaching from the Cu-TiN interface to the substrate, thus providing direct diffusion paths for Cu. However, the microstructure of these columnar layers was still dense without open porosity or voids, so that the onset of grain boundary diffusion could only be found after annealing at 900 °C for 1 h. The present study shows how to combine two high resolution state-of-the-art methods, TEM and APT, to characterize model TiN diffusion barriers. It is shown how to correlate the microstructure with the performance of the barrier layer by two-dimensional EDX mapping and three-dimensional APT. Highly effective Cu-diffusion barrier function is thus demonstrated for single-crystal TiN(001) (up to 1000 °C) and dense polycrystalline TiN (900 °C)

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“…For example nc-WC/a-C:H [18][19][20][21] or nc-TiC/a-C:H [9,[22][23][24] are reported to have good mechanical and tribological properties combining high hardness, good toughness with low friction coefficient and wear which makes these materials industrially attractive for different applications. For the specific case of the titanium target sputtering in hydrocarbon containing atmosphere there exits variety of papers that are focused on the influence of process parameters on properties of deposited coating [8,[25][26][27][28][29]. Process features are often omitted.…”

Section: Introductionmentioning

confidence: 99%

Non-monotonous evolution of hybrid PVD–PECVD process characteristics on hydrocarbon supply

Schmidtová

Souček

Kudrle

et al. 2013

Surface and Coatings Technology

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a b s t r a c t a r t i c l e i n f oHybrid PVD-PECVD process of titanium sputtering in argon and acetylene atmosphere combines aspects of both conventional techniques: sputtering of titanium target (PVD) and acetylene as a source of carbon (PECVD). This process can be used for preparation of metal carbon nanocomposites (MeC/C(:H)) or DLC layers doped with metal (DLC:Me). The aim of this paper is to describe and understand elementary processes influencing the hybrid PVD-PECVD process. A non-monotonous dependence of cathode voltage and current, total pressure and spectral line intensities on acetylene supply flow is reported. Explanation of nonmonotonous evolutions through the analysis of the target state correlating the process characteristics with properties of coatings prepared by this process is proposed.

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Mechanisms of reactive sputtering of titanium nitride and titanium carbide II: Morphology and structure

Cited by 266 publications

References 38 publications

Characterization of In-Situ TiB/TiC Particle-Reinforced Ti-5Al-5Mo-5V-3Cr Matrix Composites Synthesized by Solid-State Reaction with B4C and Graphite through SPS

Characterization of In-Situ TiB/TiC Particle-Reinforced Ti-5Al-5Mo-5V-3Cr Matrix Composites Synthesized by Solid-State Reaction with B4C and Graphite through SPS

High-resolution characterization of TiN diffusion barrier layers

Non-monotonous evolution of hybrid PVD–PECVD process characteristics on hydrocarbon supply

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