Mechanisms of plasma polymerization of various silico-organic monomers

Rau, Christiane; Kulisch, W.

doi:10.1016/0040-6090(94)90081-7

Cited by 179 publications

(164 citation statements)

References 13 publications

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“…Further evidence of OH groups comes from the peak at 930 cm −1 assigned to Si-OH stretching [32]. The shift of this peak to 920 cm −1 for 25 • C could be caused by the presence of the peak at 890 cm −1 corresponding to CH 3 rocking or Si-C stretching in Si-(CH 3 ) 2 [31,33]. Additional peaks in the region 1490-1780 cm −1 observed mainly for low temperatures were also associated with non-silica oxygen.…”

Section: Films On Silicon Substrates -Air Flow Rate Of 6 Sccmmentioning

confidence: 99%

“…. 3) [27,31,32]. Further evidence of methylsilyl groups was revealed by a narrow peak at 1273-1281 cm −1 and weak peak at 1410 cm −1 associated with symmetric and asymmetric bending of Si-(CH 3 ) x , respectively [31,33].…”

Section: Films On Silicon Substrates -Air Flow Rate Of 6 Sccmmentioning

confidence: 99%

“…3) [27,31,32]. Further evidence of methylsilyl groups was revealed by a narrow peak at 1273-1281 cm −1 and weak peak at 1410 cm −1 associated with symmetric and asymmetric bending of Si-(CH 3 ) x , respectively [31,33]. The former peak was quite strong for all the low temperature films but almost diminished at 150 • C. The latter weak peak and weak peak at 2970 cm −1 associated with assymetric stretching of CH 3 [31,34] were observable only for 25-75 • C. A weak broad peak at about 1360 cm −1 detected for 25 • C was assigned to bending of CH 2 in Si-CH 2 -Si [31,33].…”

Section: Films On Silicon Substrates -Air Flow Rate Of 6 Sccmmentioning

confidence: 99%

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Deposition of hard thin films from HMDSO in atmospheric pressure dielectric barrier discharge

Trunec¹,

Zajı́čková²,

Buršı́ková³

et al. 2010

J. Phys. D: Appl. Phys.

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To cite this version:DAbstract. The atmospheric pressure dielectric barrier discharge burning in nitrogen with small admixture of hexamethyldisiloxane (HMDSO) was used for the deposition of thin organosilicon films. The thin films were deposited on glass, silicon and polycarbonate substrates, the substrate temperature during the deposition process was elevated up to values within the range 25 • C -150 • C in order to obtain hard SiO x -like thin films. The properties of the discharge were studied by means of optical emission spectroscopy and electrical measurements. The deposited films were characterised by Rutherford backscattering and elastic recoil detection methods, x-ray photoelectron spectroscopy, infrared spectroscopy measurements, ellipsometry and depth sensing indentation technique. It was found that the films properties depend significantly on substrate temperature at deposition. An increase of substrate temperature from 25 • C to 150 • C leads to an increase of film hardness from 0.4 GPa to 7 GPa and the film chemical composition changes from CH x Si y O z to SiO x H y . The films were transparent in visible range.

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Section: Films On Silicon Substrates -Air Flow Rate Of 6 Sccmmentioning

confidence: 99%

Section: Films On Silicon Substrates -Air Flow Rate Of 6 Sccmmentioning

confidence: 99%

Section: Films On Silicon Substrates -Air Flow Rate Of 6 Sccmmentioning

confidence: 99%

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Deposition of hard thin films from HMDSO in atmospheric pressure dielectric barrier discharge

Trunec¹,

Zajı́čková²,

Buršı́ková³

et al. 2010

J. Phys. D: Appl. Phys.

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“…In particular, plasma polymerization using organosilicon monomers, hexamethyldisiloxane (HMDSO), has come into wide use (2, 16,18,24,28,31,32). These monomers are of interest because of their high deposition rates and the ability of varying the deposition conditions to control their structure and properties.…”

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confidence: 99%

Oxygen plasma surface modification enhances immobilization of simvastatin acid

et al. 2006

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Simvastatin acid (SVA) has been reported to stimulate bone formation with increased expression of BMP-2. Therefore, immobilization of SVA onto dental implants is expected to promote osteogenesis at the bone tissue/implant interface. The aim of this study was to evaluate the immobilization behavior of SVA onto titanium (Ti), O 2 -plasma treated titanium (Ti + O2), thin-film coatings of hexamethyldisiloxane (HMDSO), and O 2 -plasma treated HMDSO (HMDSO + O2) by using the quartz crystal microbalance-dissipation (QCM-D) technique. HMDSO surfaces were activated by the introduction of an OH group and/or O 2 -functional groups by O 2 -plasma treatment. In contrast, titanium surfaces showed no appreciable compositional changes by O 2 -plasma treatment. The QCM-D technique enabled evaluation even at the adsorption behavior of a substance with a low molecular weight such as simvastatin. The largest amount of SVA was adsorbed on O 2 -plasma treated HMDSO surfaces compared to untreated titanium, HMDSO-coated titanium, and O 2 -plasma treated titanium. These findings suggested that the adsorption of SVA was enhanced on more hydrophilic surfaces concomitant with the presence of an OH group and/or O 2 -functional group resulting from the O 2 -plasma treatment, and that an organic film of HMDSO followed by O 2 -plasma treatment is a promising method for the adsorption of SVA in dental implant systems.Simvastatin, one of the liposoluble statins [inhibitors of 3-hydroxy-3-methylglutaryl coenzyme A (HMGCoA) reductase], has been widely used for lowering cholesterol levels. Recently, simvastatin was reported to stimulate bone formation both in vitro and in vivo in animal models of osteoporosis (10,25). This phenomenon was associated with increased expression of the bone morphogenetic protein-2 (BMP-2) gene in bone cells. Therefore, immobilization of simvastatin onto titanium implants is expected to promote osteogenesis in the bone tissue surrounding the implants through its topical application. Furthermore, one distinct advantage of simvastatin for local stimulation of bone formation is its low manufacturing cost compared to the direct administration of recombinant proteins such as BMPs. There is also a reduced possibility of eliciting antibody responses.Plasma-surface modification including plasma polymerization and plasma surface treatment is an effective and economical surface treatment technique for many materials. The technique is of growing interest in biomedical engineering because it can control the physicochemical properties of biomaterials

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“…Two main absorption bands are at 780 and 1000 cm -1 . The first one is due to C Si  stretching vibration with possible minor contribution from CH 3 rocking in ) [10][11][12][13]. The absorption band at 1000 cm -1 in a -SiO 1-x : C x : H films is commonly ascribed to rocking/waging vibration modes in CH 2 radicals attached to silicon atoms [12].…”

Section: Ftirmentioning

confidence: 99%

Electroluminescent properties of Tb-doped carbon-enriched silicon oxide

Tiagulskyi¹

2014

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. An electroluminescent device utilizing a heterostructure of amorphous terbium doped carbon-rich SiO x (a -SiO x : C : Tb) on silicon has been developed. The a -SiO x : C : Tb active layer was formed by RF magnetron sputtering of a -SiO 1-x : C x : H(:Tb) film followed by high-temperature oxidation. It was shown that, depending on the polarity of the applied voltage, the electroluminescence is either green or white, which can be attributed to different mechanisms of current transport through the oxide film -space charge limited bipolar double injection current for green electroluminescence and trap assisted tunneling or Fowler-Nordheim tunneling for white electroluminescence.

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Mechanisms of plasma polymerization of various silico-organic monomers

Cited by 179 publications

References 13 publications

Deposition of hard thin films from HMDSO in atmospheric pressure dielectric barrier discharge

Deposition of hard thin films from HMDSO in atmospheric pressure dielectric barrier discharge

Oxygen plasma surface modification enhances immobilization of simvastatin acid

Electroluminescent properties of Tb-doped carbon-enriched silicon oxide

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