Mechanisms of epitaxial growth of SiC films by the method of atom substitution on the surfaces (100) and (111) of Si single crystals and on surfaces of Si films grown on single crystals Al<sub>2</sub>O<sub>3</sub>

The synthesis of III-nitride binary compounds on commercial standard (001) silicon wafers by vapour-phase epitaxy is one of the promising directions for III-nitride technology development. However, the difference between crystal symmetry of Si(001) and wurzite (0001) surface structures is challenge that hinders the development. A use of silicon substrates with nano-patterned surface is one of the solutions to the problem. In this paper we present a transmission electron microscopy study of polar and semipolar GaN layers grown by halide vapour-phase epitaxy and metalorganic vapour-phase epitaxy on nano-patterned silicon (001) substrate. Crystallographic orientation relationships between the silicon substrate and GaN layers is identified. For GaN layers grown by metalorganic vapour-phase epitaxy an effect of SiC buffer layer synthesized by original growth method on their microstructure and surface morphology is under consideration.

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TEM investigation of microstructure of semipolar GaN layers grown on nano-patterned Si(001) substrates

Myasoedov

Берт

Бессолов

2020

J. Phys.: Conf. Ser.

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Microstructure of Epitaxial GaN Layers Synthesized on Nanoprofiled Si(001) Substrates

2021

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Mechanisms of epitaxial growth of SiC films by the method of atom substitution on the surfaces (100) and (111) of Si single crystals and on surfaces of Si films grown on single crystals Al₂O₃

Cited by 2 publications

References 7 publications

TEM investigation of microstructure of semipolar GaN layers grown on nano-patterned Si(001) substrates

TEM investigation of microstructure of semipolar GaN layers grown on nano-patterned Si(001) substrates

Microstructure of Epitaxial GaN Layers Synthesized on Nanoprofiled Si(001) Substrates

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Mechanisms of epitaxial growth of SiC films by the method of atom substitution on the surfaces (100) and (111) of Si single crystals and on surfaces of Si films grown on single crystals Al2O3

Cited by 2 publications

References 7 publications

TEM investigation of microstructure of semipolar GaN layers grown on nano-patterned Si(001) substrates

TEM investigation of microstructure of semipolar GaN layers grown on nano-patterned Si(001) substrates

Microstructure of Epitaxial GaN Layers Synthesized on Nanoprofiled Si(001) Substrates

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Product

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Mechanisms of epitaxial growth of SiC films by the method of atom substitution on the surfaces (100) and (111) of Si single crystals and on surfaces of Si films grown on single crystals Al₂O₃