Abstract:The synthesis of III-nitride binary compounds on commercial standard (001) silicon wafers by vapour-phase epitaxy is one of the promising directions for III-nitride technology development. However, the difference between crystal symmetry of Si(001) and wurzite (0001) surface structures is challenge that hinders the development. A use of silicon substrates with nano-patterned surface is one of the solutions to the problem. In this paper we present a transmission electron microscopy study of polar and semipolar … Show more
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