Mechanisms of current rectification in an STM tunnel junction and the measurement of an operational tunneling time

Nguyen, Hong Nam; Cutler, P.H.; Feuchtwang, T. E.; Huang, ZhaoHui; Kuk, Y.; Silvėrman, P. J.; Lucas, A. A.; Sullivan, T. E.

doi:10.1109/16.43771

Cited by 63 publications

(53 citation statements)

References 29 publications

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“…6 Two years later, preliminary results were reported, and a tunneling time was derived. 7 In retrospect, the dc current induced by 1.06 m laser irradiation of a silicon sample was most likely due to the surface photovoltage effect. 8,9 In 1990, Kuk and co-workers observed small variations in laserinduced surface photovoltage on Si͑111͒ −7ϫ 7 with STM and tentatively attributed it to rectification.…”

mentioning

confidence: 99%

Atomic-scale rectification at microwave frequency

Tu¹,

Lee²,

Ho³

2006

The Journal of Chemical Physics

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Microwave of known amplitude and frequency, irradiating the junction of a low temperature scanning tunneling microscope, was found to induce a dc signal. This rectification current is spatially localized and exhibits chemical sensitivity at the atomic scale. Dependence of the rectification current on the sample bias voltage reveals spin splitting in the electronic state of a single Mn atom and vibrations of single MnCO molecule. These results demonstrate the feasibility of atomic scale nonlinear spectroscopy and the potential for the detection of resonance phenomena excited with a spatially extended electromagnetic wave.

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confidence: 99%

Atomic-scale rectification at microwave frequency

Tu¹,

Lee²,

Ho³

2006

The Journal of Chemical Physics

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“…For the tunneling junction without Ag nanoelectrode, the tunneling only occurs at the sharp protrusion of AFM tip (e.g., upmost atoms of the tip) in spite that the contact area can be much bigger. 16,26 The sharp protrusion generates much stronger electric field near the tip than that near the BTO/SRO interface, producing much different shapes between forward and reverse tunnel barriers, as schematically shown in Fig. 4(b).…”

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confidence: 99%

“…25 This is more or less analogous to a MOM point contact diode, in which electrons can tunnel easily from a sharp tip to a flat metal surface, while is much difficult to tunnel backward. 26,27 As a result, when replacing the sharp AFM tip with Ag electrodes, the point contact geometry becomes flat surface contact, hence greatly improves the symmetry of I-V curve.…”

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Nanoscale ferroelectric tunnel junctions based on ultrathin BaTiO3 film and Ag nanoelectrodes

Gao

Liu

et al. 2012

Applied Physics Letters

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Electron field emission from reduced graphene oxide on polymer film Appl. Phys. Lett. 102, 033102 (2013) Effect of tunneling transfer on thermal redistribution of carriers in hybrid dot-well nanostructures J. Appl. Phys. 113, 034309 (2013) Negative differential resistance in electron tunneling in ultrathin films near the two-dimensional limit J. Appl. Phys. 113, 034308 (2013) Simultaneous measurement of tunneling current and atomic dipole moment on Si(111)-(7×7) surface by noncontact scanning nonlinear dielectric microscopy

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“…Thus, it appears that the accuracy of models of chemical reactivity would be increased by correcting for the duration of barrier penetration in addition to the well-known delays for passage over the barrier [SI. Preliminary experiments suggest that the interaction of tunneling particles with the timedependent potential in a laser-illuminated scanning tunneling microscope (STM) may be used as a clock to determine the tunneling time [6]. Adding a time-dependent potential to a static barrier, termed "barrier modulation" [ 71, changes the magnitude of the tunneling current.…”

Section: Introduction M Erostructures [L] and Josephson Junctionsmentioning

confidence: 99%

Efficient numerical methods for solving the Schr�dinger equation with a potential varying sinusoidally with time

Hagmann

1995

Int. J. Quantum Chem.

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rnWe have used several different methods to solve the one-dimensional, time-dependent Schrodinger equation for a sinusiodally modulated barrier. Analytical solutions are given for the case in which the time-dependent part of the potential has several different forms, but is independent of position. For more general fields, Floquet's theorem is used to write the wavefunction as a summation of components which have different energies as a result of the absorption and emission of modulation quanta. A system of coupled ordinary differential equations is obtained, which is then solved numerically using shooting methods. The examples show a resonance in which the tunneling current is markedly increased. For square barriers, this resonance occurs when the particles absorbing modulation quanta are above the barrier, and the length of the barrier is an integer multiple of one-half the de Broglie wavelength. The existence of the resonance is confirmed by asymptotic solutions for large and small frequencies. Examples suggest that it may be possible to make a microwave power amplifier by illuminating a field emitter array with an amplitude-modulated laser operating near the new resonance. ated much interest and controversy [31. f i s subject has considerable practical significance. For example, the measured tunnel conductance in heterostructures differs from theory by as much as 2 easurements with semiconductor hetorders of magnitude unless the image corrections are modified to allow for the traversal time ill.Furthermore, at high energies it is necessary to include tunneling through the reaction barrier in transition state theory to obtain accurate rate con-

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Mechanisms of current rectification in an STM tunnel junction and the measurement of an operational tunneling time

Cited by 63 publications

References 29 publications

Atomic-scale rectification at microwave frequency

Atomic-scale rectification at microwave frequency

Nanoscale ferroelectric tunnel junctions based on ultrathin BaTiO3 film and Ag nanoelectrodes

Efficient numerical methods for solving the Schr�dinger equation with a potential varying sinusoidally with time

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