Mechanisms of carrier lifetime enhancement and conductivity-type switching on hydrogen-incorporated arsenic-doped BaSi2

Aonuki, Sho; Xu, Zhihao; Yamashita, Yudai; Gotoh, Kazuhiro; Toko, Kaoru; Usami, Noritaka; Филонов, А. Б.; Nikitsiuk, Siarhei A.; Мигас, Д. Б.; Shohonov, Denis A.; Suemasu, Takashi

doi:10.1016/j.tsf.2021.138629

Cited by 9 publications

(8 citation statements)

References 42 publications

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“…H incorporation has also been reported to be an efficient and feasible way to increase the photoresponsivity of Bdoped and As-doped BaSi 2 . [53,56]…”

Section: Hydrogen Passivation Of Undoped Basimentioning

confidence: 99%

“…[38,39] By positron annihilation spectroscopy, [39] it has been revealed that the electron concentration increases to %10 18 cm À3 with increasing vacancy-type defects [38] when the Ba/Si atomic ratio is far from the stoichiometric ratio. In addition, novel device structures have been proposed, [40][41][42][43][44][45][46][47][48][49][50] and passivation of defects in BaSi 2 has been demonstrated by atomic-hydrogen (H) [51][52][53][54][55][56] and carbon (C) doping. [27,30,57] For deposition techniques, vacuum evaporation of BaSi 2 granules [21][22][23][24][25] and sputtering of BaSi 2 targets [26][27][28][29][30] or cosputtering of Si and Ba targets [31] are suitable to form BaSi 2 films for large-scale deployment on inexpensive substrates like SiO 2 .…”

Section: Introductionmentioning

confidence: 99%

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Recent Progress Toward Realization of High‐Efficiency BaSi₂ Solar Cells: Thin‐Film Deposition Techniques and Passivation of Defects

Suemasu

Мигас

2021

Physica Status Solidi (a)

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Safe, stable, and earth-abundant materials for solar cell applications are of particular importance to realize a decarbonized society. Semiconducting barium disilicide (BaSi 2 ), which is composed of nontoxic and earth-abundant elements, is an emerging material to meet this requirement. BaSi 2 has a bandgap of 1.3 eV that is suitable for single-junction solar cells, a large absorption coefficient exceeding that of chalcopyrite, and inactive grain boundaries. This review is started by describing the recent progress of BaSi 2 thin-film deposition techniques using radio-frequency sputtering and discuss the high photoresponsivity of BaSi 2 thin films. Special attention is paid to passivation of the defects in BaSi 2 films by hydrogen or carbon doping. Ab initio studies based on density-functional theory are then used to calculate the positions of the localized defective states and the Fermi level to discuss the experimentally obtained passivation effects. Finally, the issues that need to be resolved toward realization of high-efficiency BaSi 2 solar cells are addressed.

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“…H incorporation has also been reported to be an efficient and feasible way to increase the photoresponsivity of Bdoped and As-doped BaSi 2 . [53,56]…”

Section: Hydrogen Passivation Of Undoped Basimentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Recent Progress Toward Realization of High‐Efficiency BaSi₂ Solar Cells: Thin‐Film Deposition Techniques and Passivation of Defects

Suemasu

Мигас

2021

Physica Status Solidi (a)

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“…The valence band maximum of BaSi 2 primarily consists of Si 3s and 3p orbitals 30–33 ; therefore, replacement of some of the Si atoms in BaSi 2 with group 15 elements such as P, As, and Sb increases the electron concentration of BaSi 2 . We have also succeeded in controlling electron concentrations through MBE using As in the role of n‐type impurity 34,35 and achieved high photoresponsivity of As‐doped n‐BaSi 2 films by atomic H treatment 36,37 . However, the conductivity type of As‐doped BaSi 2 films sometimes switches from n‐type to p‐type 37 .…”

Section: Introductionmentioning

confidence: 96%

“…We have also succeeded in controlling electron concentrations through MBE using As in the role of ntype impurity 34,35 and achieved high photoresponsivity of As-doped n-BaSi 2 films by atomic H treatment. 36,37 However, the conductivity type of As-doped BaSi 2 films sometimes switches from n-type to ptype. 37 Among P, As, and Sb, P is not easy to handle by sputtering or MBE methods because of its high vapor pressure and reactivity.…”

Section: Introductionmentioning

confidence: 99%

Device operation of P‐ion‐implanted n‐BaSi₂/p‐Si heterojunction solar cells

Aonuki

Yamashita

Limodio

et al. 2022

Progress in Photovoltaics

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We formed phosphorous(P)‐ion‐implanted n‐BaSi2 films on p‐Si(111) substrates and demonstrated solar‐cell functionality of the n‐BaSi2/p‐Si heterojunction under AM1.5 illumination. The BaSi2 films were grown by molecular beam epitaxy, followed by implantation of P ions to the BaSi2 films using PF3 gas at an energy of 10 keV and a dose of 1 × 1014 cm−2. Subsequent postannealing was conducted at 500°C in Ar for different durations (t = 30–480 s) to activate the P atoms. The diffusion coefficient for P atoms in BaSi2 was evaluated from the depth profiles of P atoms by secondary‐ion mass spectrometry. The activation energies of lattice and grain boundary diffusion were found to be 1.1 ± 0.6 and 2.5 ± 0.6 eV, respectively. From the analysis of Raman and photoluminescence spectra, the ion implantation damage was recovered by the postannealing. For one treated sample with t = 120 s, the internal quantum efficiency reached 67% at a wavelength of 870 nm. This is the highest ever achieved for n‐BaSi2/p‐Si heterojunction solar cells. Ion implantation is thus applicable to BaSi2 films grown by any other method. This achievement thereby opens a new route for the formation of BaSi2 solar cells.

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“…30) Marked enhancement of photoresponsivity was also demonstrated for H-, B-, and Asdoped BaSi 2 films and their passivation mechanisms were discussed based on the first-principles calculation. [34][35][36] However, there have been no studies thus far on how much damage Ar ions may cause in sputter-deposited BaSi 2 films and thereby the BaSi 2 /Si heterointerface. This investigation is inevitable prior to the formation of BaSi 2 devices by sputtering.…”

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confidence: 99%

Solar cell operation of sputter-deposited n-BaSi₂/p-Si heterojunction diodes and characterization of defects by deep-level transient spectroscopy

Nemoto

Aonuki

Koitabashi

et al. 2021

Appl. Phys. Express

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We form carbon-doped n-BaSi2(0.35 μm)/p-Si(111) heterojunction diodes by radio-frequency sputtering using BaSi2 and SiC targets, and demonstrate the solar cell operation for the first time under AM1.5 illumination. The electron trap level was measured to be 0.21 eV below the conduction band edge of the n-BaSi2 layers by deep-level transient spectroscopy. The shunt resistance reflecting the quality of the heterointerface exceeds 0.7 MΩ, one order of magnitude higher than that obtained for the same structure grown by molecular beam epitaxy. The carrier transport properties are discussed based on the external quantum efficiency spectrum and the band alignment.

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Mechanisms of carrier lifetime enhancement and conductivity-type switching on hydrogen-incorporated arsenic-doped BaSi2

Cited by 9 publications

References 42 publications

Recent Progress Toward Realization of High‐Efficiency BaSi₂ Solar Cells: Thin‐Film Deposition Techniques and Passivation of Defects

Recent Progress Toward Realization of High‐Efficiency BaSi₂ Solar Cells: Thin‐Film Deposition Techniques and Passivation of Defects

Device operation of P‐ion‐implanted n‐BaSi₂/p‐Si heterojunction solar cells

Solar cell operation of sputter-deposited n-BaSi₂/p-Si heterojunction diodes and characterization of defects by deep-level transient spectroscopy

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Mechanisms of carrier lifetime enhancement and conductivity-type switching on hydrogen-incorporated arsenic-doped BaSi2

Cited by 9 publications

References 42 publications

Recent Progress Toward Realization of High‐Efficiency BaSi2 Solar Cells: Thin‐Film Deposition Techniques and Passivation of Defects

Recent Progress Toward Realization of High‐Efficiency BaSi2 Solar Cells: Thin‐Film Deposition Techniques and Passivation of Defects

Device operation of P‐ion‐implanted n‐BaSi2/p‐Si heterojunction solar cells

Solar cell operation of sputter-deposited n-BaSi2/p-Si heterojunction diodes and characterization of defects by deep-level transient spectroscopy

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Recent Progress Toward Realization of High‐Efficiency BaSi₂ Solar Cells: Thin‐Film Deposition Techniques and Passivation of Defects

Recent Progress Toward Realization of High‐Efficiency BaSi₂ Solar Cells: Thin‐Film Deposition Techniques and Passivation of Defects

Device operation of P‐ion‐implanted n‐BaSi₂/p‐Si heterojunction solar cells

Solar cell operation of sputter-deposited n-BaSi₂/p-Si heterojunction diodes and characterization of defects by deep-level transient spectroscopy