Solar cell operation of sputter-deposited n-BaSi<sub>2</sub>/p-Si heterojunction diodes and characterization of defects by deep-level transient spectroscopy

Nemoto, Tadashi; Aonuki, Sho; Koitabashi, Ryota; Yamashita, Yudai; Mesuda, Masami; Toko, Kaoru; Suemasu, Takashi

doi:10.35848/1882-0786/abfb87

Cited by 11 publications

(8 citation statements)

References 43 publications

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“…The IQE reached 67% at a wavelength of approximately 900 nm and originated from the Si substrate (see Figure 6). This value is the highest of all the n‐BaSi 2 /p‐Si heterojunction solar cells ever reported 22,67 . In addition, the IQE in the short wavelength range (< 600 nm) is greater than that for Sb‐doped n‐BaSi 2 /p‐Si heterojunction solar cells 22 .…”

Section: Results and Disscussionmentioning

confidence: 77%

“…This value is the highest of all the n-BaSi 2 /p-Si heterojunction solar cells ever reported. 22,67 In addition, the IQE in the short wavelength range (< 600 nm) is greater than that for Sb-doped n-BaSi 2 /p-Si heterojunction solar cells. 22 Because the absorption coefficient of BaSi 2 is very high at these wavelengths, most of the short wavelength photons are absorbed in the BaSi 2 films.…”

Section: Characteristics Of P-ion-implanted N-basi 2 Filmsmentioning

confidence: 99%

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Device operation of P‐ion‐implanted n‐BaSi₂/p‐Si heterojunction solar cells

Aonuki

Yamashita

Limodio

et al. 2022

Progress in Photovoltaics

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We formed phosphorous(P)‐ion‐implanted n‐BaSi2 films on p‐Si(111) substrates and demonstrated solar‐cell functionality of the n‐BaSi2/p‐Si heterojunction under AM1.5 illumination. The BaSi2 films were grown by molecular beam epitaxy, followed by implantation of P ions to the BaSi2 films using PF3 gas at an energy of 10 keV and a dose of 1 × 1014 cm−2. Subsequent postannealing was conducted at 500°C in Ar for different durations (t = 30–480 s) to activate the P atoms. The diffusion coefficient for P atoms in BaSi2 was evaluated from the depth profiles of P atoms by secondary‐ion mass spectrometry. The activation energies of lattice and grain boundary diffusion were found to be 1.1 ± 0.6 and 2.5 ± 0.6 eV, respectively. From the analysis of Raman and photoluminescence spectra, the ion implantation damage was recovered by the postannealing. For one treated sample with t = 120 s, the internal quantum efficiency reached 67% at a wavelength of 870 nm. This is the highest ever achieved for n‐BaSi2/p‐Si heterojunction solar cells. Ion implantation is thus applicable to BaSi2 films grown by any other method. This achievement thereby opens a new route for the formation of BaSi2 solar cells.

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Section: Results and Disscussionmentioning

confidence: 77%

Section: Characteristics Of P-ion-implanted N-basi 2 Filmsmentioning

confidence: 99%

Device operation of P‐ion‐implanted n‐BaSi₂/p‐Si heterojunction solar cells

Aonuki

Yamashita

Limodio

et al. 2022

Progress in Photovoltaics

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“…[15][16][17] These properties meet the requirement of high-η thin-film solar cells. Based on the results of such basic research to date, various types of BaSi 2 solar cells have been proposed [18][19][20][21][22][23][24] and fabricated in the form of BaSi 2 /Si, [25][26][27][28][29] BaSi 2 -pn, 30) and n-ZnO/p-BaSi 2 , 31,32) and SnS/BaSi 2 33) by thin-film growth methods such as molecular beam epitaxy (MBE), vacuum evaporation, and sputtering.…”

Section: Introductionmentioning

confidence: 99%

Demonstration of B-ion-implanted p-BaSi₂/n-Si heterojunction solar cells

Aonuki

Narita

Takayanagi

et al. 2023

Jpn. J. Appl. Phys.

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The implantation of B atoms into BaSi2 epitaxial films grown by molecular beam epitaxy was performed to form p-type BaSi2 films. It was revealed by Raman spectroscopy that the ion-implantation damage induced in the implanted BaSi2 films was recovered by post-annealing at 600 °C or higher temperatures for 64 min. The hole concentration increased up to 3.1 × 1018 cm−3 at room temperature, indicating that B-ion-implanted p-BaSi2 films are applicable as a hole transport layer. The B-ion-implanted p-BaSi2/n-Si heterojunction solar cells showed the rectifying current-voltage characteristics under AM1.5G illumination and the internal quantum efficiency reached 72% at the wavelength of 900 nm. The conversation efficiency was 2.2%. These results open new routes for the formation methods of BaSi2 solar cells.

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“…20,21) In addition, bipolar doping is possible. 14,22) Thus far, various types of BaSi 2 solar cells have been proposed 13,[23][24][25][26][27][28] and fabricated in the form of BaSi 2 /Si, [29][30][31][32] BaSi 2 -pn, 33) and n-ZnO/p-BaSi 2 , 34,35) and SnS/BaSi 2 36) by thin-film growth methos such as molecular beam epitaxy, sputtering, and vacuum evaporation. For largearea deposition of BaSi 2 thin-films, vacuum evaporation and sputtering have been developed.…”

Section: Introductionmentioning

confidence: 99%

Towards B-doped p-BaSi₂ films on Si substrates by co-sputtering of BaSi₂, Ba, and B-doped Si targets

Hasebe

Kido

Takenaka

et al. 2022

Jpn. J. Appl. Phys.

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BaSi2 is one of the emerging materials for thin-film solar cell applications; hence the conductivity control by impurity doping is of great importance. The formation of B-doped p-BaSi2 films has been achieved by molecular beam epitaxy and vacuum evaporation. We fabricated B-doped BaSi2 films on Si substrates at 600 °C by co-sputtering BaSi2, Ba, and B-doped Si targets, followed by post annealing at 900 °C or 1000 °C for 5 min in an Ar atmosphere. Contrary to expectations, as-grown sample and the sample annealed at 900 °C showed n-type conductivity, while the sample annealed at 1000 °C showed p-type conductivity. The reason for the n-type conductivity was discussed based on first-principles calculation considering the presence of oxygen atoms in the order of 1021 cm-3. The n-type conductivity for B-doped BaSi2 is possible only when both the B and O atoms being a substitution impurity are in the same Si4 tetrahedron.

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Solar cell operation of sputter-deposited n-BaSi₂/p-Si heterojunction diodes and characterization of defects by deep-level transient spectroscopy

Cited by 11 publications

References 43 publications

Device operation of P‐ion‐implanted n‐BaSi₂/p‐Si heterojunction solar cells

Device operation of P‐ion‐implanted n‐BaSi₂/p‐Si heterojunction solar cells

Demonstration of B-ion-implanted p-BaSi₂/n-Si heterojunction solar cells

Towards B-doped p-BaSi₂ films on Si substrates by co-sputtering of BaSi₂, Ba, and B-doped Si targets

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Solar cell operation of sputter-deposited n-BaSi2/p-Si heterojunction diodes and characterization of defects by deep-level transient spectroscopy

Cited by 11 publications

References 43 publications

Device operation of P‐ion‐implanted n‐BaSi2/p‐Si heterojunction solar cells

Device operation of P‐ion‐implanted n‐BaSi2/p‐Si heterojunction solar cells

Demonstration of B-ion-implanted p-BaSi2/n-Si heterojunction solar cells

Towards B-doped p-BaSi2 films on Si substrates by co-sputtering of BaSi2, Ba, and B-doped Si targets

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Solar cell operation of sputter-deposited n-BaSi₂/p-Si heterojunction diodes and characterization of defects by deep-level transient spectroscopy

Device operation of P‐ion‐implanted n‐BaSi₂/p‐Si heterojunction solar cells

Device operation of P‐ion‐implanted n‐BaSi₂/p‐Si heterojunction solar cells

Demonstration of B-ion-implanted p-BaSi₂/n-Si heterojunction solar cells

Towards B-doped p-BaSi₂ films on Si substrates by co-sputtering of BaSi₂, Ba, and B-doped Si targets