Mechanisms and reactions during atomic layer deposition on polymers

Parsons, Gregory N.; Atanasov, Sarah E.; Dandley, Erinn C.; Devine, Christina K.; Gong, Bin; Jur, Jesse S.; Lee, Kyoung-Mi; Oldham, Christopher J.; Peng, Qing; Spagnola, Joseph C.; Williams, Philip S.

doi:10.1016/j.ccr.2013.07.001

Cited by 185 publications

(199 citation statements)

References 42 publications

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“…10,19,20 The ALD growth on polymers is strongly dependent on the nature of the polymer and on the ALD precursors. 11,21 For some polymers, reactive sites that can covalently bind the reactants at the initial stages of deposition are not available and the deposition initiates only after a certain number of cycles. 22 Many polymers are permeable to small molecules, which allow the diffusion of the precursors into the bulk.…”

Section: Introductionmentioning

confidence: 99%

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Nucleation and growth of ZnO on PMMA by low-temperature atomic layer deposition

Napari

Malm

Lehto

et al. 2014

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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ZnO deposition on metal substrates: Relating fabrication, morphology, and wettability J. Appl. Phys. 113, 184905 (2013) ZnO films were grown by atomic layer deposition at 35 C on poly(methyl methacrylate) substrates using diethylzinc and water precursors. The film growth, morphology, and crystallinity were studied using Rutherford backscattering spectrometry, time-of-flight elastic recoil detection analysis, atomic force microscopy, scanning electron microscopy, and x-ray diffraction. The uniform film growth was reached after several hundreds of deposition cycles, preceded by the precursor penetration into the porous bulk and island-type growth. After the full surface coverage, the ZnO films were stoichiometric, and consisted of large grains (diameter 30 nm) with a film surface roughness up to 6 nm (RMS). The introduction of Al 2 O 3 seed layer enhanced the initial ZnO growth substantially and changed the surface morphology as well as the crystallinity of the deposited ZnO films. Furthermore, the water contact angles of the ZnO films were measured, and upon ultraviolet illumination, the ZnO films on all the substrates became hydrophilic, independent of the film crystallinity.

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Section: Introductionmentioning

confidence: 99%

“…22 The subsurface growth affects on the structure of the polymer substrate/film interface as well as the surface roughness of the film. 21,22 Parsons et al 21 introduced another possible mechanism for TMA reaction with PMMA. In this mechanism, the Lewis-acidic TMA reacts with the Lewis-basic carbonyl groups on PMMA side-chains.…”

Section: Introductionmentioning

confidence: 99%

Nucleation and growth of ZnO on PMMA by low-temperature atomic layer deposition

Napari

Malm

Lehto

et al. 2014

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…The ALD of oxide materials on cotton and other polymeric substrates differs significantly from ALD on standard substrate materials such as silicon or glass. [18] First of all, in comparison to silicon, the fibers of the cotton substrate form a porous-type fine-structure with features of ≈10 µm in size. This requires much longer pulse and purge times during the ALD to attain even growth of the film.…”

Section: Thin-film Fabrication and Structural Characteristicsmentioning

confidence: 99%

“…[18] However, cellulosic cotton is an example of a natural polymer with a large density of surface hydroxyl groups, which may help the precursors to react at the surface, thus preventing the subsurface diffusion. [18] To study the nature of ALD of ZnO on our cotton substrates, we carried out the ZnO depositions both for pristine cotton substrates and for cotton substrates coated with predeposited Al 2 O 3 . The ALD of Al 2 O 3 was carried out with the standard trimethyl aluminum (TMA) and H 2 O precursors, and since TMA is known to react readily with the surface hydroxyls of cellulosic cotton, such predeposition can improve the quality of the deposited ZnO thin films.…”

Section: Thin-film Fabrication and Structural Characteristicsmentioning

confidence: 99%

Flexible Thermoelectric ZnO–Organic Superlattices on Cotton Textile Substrates by ALD/MLD

Karttunen

Sarnes

Townsend

et al. 2017

Adv Elect Materials

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we focus on small-scale energy harvesting based on the thermoelectric effect.Thermoelectric materials can be used to convert waste heat to electric energy via Seebeck effect. They are characterized by a dimensionless figure-of-merit ZT = S 2 σT/(κ e + κ L ), where S is the Seebeck coefficient (thermopower), σ the electrical conductivity, T the temperature, and κ e and κ L the electronic and lattice contributions to the thermal conductivity κ. [12] Figure 1 illustrates the basic principle of a conventional thermoelectric (TE) energy conversion device and the concept of a TE generator device combined with a flexible substrate. Furthermore, Figure 1c shows how the ZT value arises from the abovementioned individual components. Alloys of bismuth telluride (Bi 2 Te 3 ) and antimony telluride (Sb 2 Te 3 ) are by far the most widely used TE materials. They show high ZT values for near-room-temperature applications and have been utilized for decades in solid-state refrigeration applications. A major obstacle for the widespread utilization of Bi-Sb-Te based thermoelectrics is the low abundance of tellurium: it is among the rarest elements in the Earth's crust. Furthermore, current thermoelectric generators based on conventional TE materials such as Bi 2 Te 3 are typically inflexible solid-state devices, which would not be convenient for mobile small-scale applications. [12] Consequently, there is a significant interest in producing flexible and efficient TE generator solutions. In particular, a mechanically flexible TE generator solution integrated with light-weight and comfortable textile substrates could be an enabling platform for body-heat-based energy harvesting.Recently Lee et al. fabricated woven-yarn thermoelectric textiles by coating electrospun polyacrylonitrile nanofiber cores with n-type Bi 2 Te 3 and p-type Sb 2 Te 3 and twisting them into flexible yarns. [13] By weaving the TE-coated yarns into textiles, they were able to obtain an output power of up to 8.56 W m −2 for a temperature difference of 200 K in the textile thickness direction. Another recent study on thermoelectric fabrics utilized a completely different type of material solution, where thermoelectric PEDOT:PSS (poly(3,4-ethylenedioxythiophene) polystyrene sulfonate) polymer was used to coat a polyester fabric with a solution-based method. [14] This fabric-TE device was based on p-type PEDOT:PSS only, resulting in a so-called unileg-type device that produced an output power of about 260 µW m −2 for a temperature difference of 75 K.The thermoelectric properties of both pristine ZnO and ZnO-organic superlattice thin films deposited on a cotton textile are investigated. The thin films are fabricated by atomic layer deposition/molecular layer deposition, using hydroquinone as the organic precursor for the superlattices. The resulting thin-film coatings are crystalline, in particular when deposited on a textile substrate with a thin predeposited Al 2 O 3 seed layer. The thermoelectric properties of the ZnO and ZnO-organic superlattice coatings are comp...

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“…The key distinction between the ALD and SIS techniques is that the latter one can provide the bulk synthesis of the inorganic material when employed on polymers (or any other porous structures) [11][12][13]. For that the precursors exposure times are extended in SIS compared to ALD to facilitate diffusion into the volume of the organic film.…”

Section: Introductionmentioning

confidence: 99%

Sequential Infiltration Synthesis for Line Edge Roughness Mitigation of EUV Resist

Baryshnikova

Simone²,

Knaepen³

et al. 2017

J. Photopol. Sci. Technol.

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It is well known that high line-edge roughness (LER) and line-width roughness (LWR) are one of the key problems hindering utilization of extreme ultraviolet lithography (EUVL) in fabrication of semiconductor devices at advanced technology nodes where pattern with sub-20 nm half pitch lines and spaces is required. Sequential infiltration synthesis (SIS) has never been used before in lithography for line-edge roughness mitigation, but this concept has proved its value for 14 nm half pitch block copolymer lines formed by directed self-assembly. During this process an inorganic scaffold is being deposited inside the resist material after performing several sequential infiltration cycles with metal-organic precursor and its oxidizing agent. Etching in oxygen atmosphere after is required to transform former resist pattern into metal oxide one and improve (up to 40%) the pattern roughness. In this paper, for the first time we demonstrate feasibility of sequential infiltration synthesis (SIS) for smoothing of EUV resist lines.

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Mechanisms and reactions during atomic layer deposition on polymers

Cited by 185 publications

References 42 publications

Nucleation and growth of ZnO on PMMA by low-temperature atomic layer deposition

Nucleation and growth of ZnO on PMMA by low-temperature atomic layer deposition

Flexible Thermoelectric ZnO–Organic Superlattices on Cotton Textile Substrates by ALD/MLD

Sequential Infiltration Synthesis for Line Edge Roughness Mitigation of EUV Resist

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