Abstract:Dielectric layers are widely used in ferroelectric applications such as memory and negative capacitance devices. The wake-up and the split-up phenomena in the ferroelectric hafnia are well-known challenges in early-stage device reliability. We found that the phenomena even occur in the bilayer, which is composed of the hafnia and the dielectrics. The phenomena are known to be affected mainly by oxygen vacancies of hafnia. Dielectric layers, which are often metal oxides, are also prone to be affected by oxygen … Show more
In this paper, we propose and experimentally demonstrate a six-level ferroelectric cell with six switchable polarization states using a novel fixed-charge method.
In this paper, we propose and experimentally demonstrate a six-level ferroelectric cell with six switchable polarization states using a novel fixed-charge method.
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