2024
DOI: 10.1039/d4tc01960a
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A six-level ferroelectric storage cell based on a bidirectional imprint field

Chaeheon Kim,
Junghyeon Hwang,
Hunbeom Shin
et al.

Abstract: In this paper, we propose and experimentally demonstrate a six-level ferroelectric cell with six switchable polarization states using a novel fixed-charge method.

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