2005
DOI: 10.1063/1.1856132
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Mechanism of stress relaxation in Ge nanocrystals embedded in SiO2

Abstract: Ion-beam-synthesized 74 Ge nanocrystals embedded in an amorphous silica matrix exhibit large compressive stresses in the as-grown state. The compressive stress is determined quantitatively by evaluating the Raman line shift referenced to the line position of freestanding nanocrystals. Post-growth thermal treatments lead to stress reduction. The stress relief process is shown to be governed by the diffusive flux of matrix atoms away from the local nanocrystal growth region. A theoretical model that quantitativ… Show more

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Cited by 54 publications
(41 citation statements)
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“…• C. 16 This is consistent with observations of McGraw 17 and Belousov et al 18 showing a steep increase in elastic moduli of various glasses at temperatures below ∼580…”
supporting
confidence: 81%
See 1 more Smart Citation
“…• C. 16 This is consistent with observations of McGraw 17 and Belousov et al 18 showing a steep increase in elastic moduli of various glasses at temperatures below ∼580…”
supporting
confidence: 81%
“…GeAu BEANs are produced by implanting Ge into Au-doped silica films fabricated by co-sputtering Au and Si under a 90% Ar-10% O atmosphere onto Si(111) substrates. Specifically, for the GeAu case, 74 Ge is implanted using three energies, in order to obtain a more uniform compositions profile: 3.5 × 10 16 cm −2 at 150 keV, 4.7 × 10 15 cm…”
mentioning
confidence: 99%
“…The effect of stress on Raman shift can be changed by stress relaxation using post-annealing [38][39][40]. For instance, the Raman peak of a Ge sample with compressive strain shifts to lower frequencies as the annealing time increases [32,41,42]. This phenomenon was also observed in this study.…”
Section: Raman Scatteringsupporting
confidence: 55%
“…The deposition of energetic ions fragments the clusters, leads to inverse Ostwald ripening [9], and ultimately limits cluster sizes. The basic understanding of IBS has been exploited to fabricate interesting nanostructures [9][10][11][12][13][14][15] and alter cluster size distributions [15,16]. But unlike low dose semiconductor doping via implantation that is extensively studied and understood [17][18][19][20], no detailed, comprehensive, quantitative theory if IBS has been developed.…”
mentioning
confidence: 99%