Mechanism of n-doping of silicon carbide epitaxial films

Fiorucci, A.; Moscatelli, Davide; Masi, Maurizio

doi:10.1016/j.jcrysgro.2006.11.193

Cited by 6 publications

(12 citation statements)

References 5 publications

(5 reference statements)

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“…Therefore the kinetic mechanism of surface reaction is important, in which N 2 dissociates and reacts with Si-sites on the surface. 26 Theoretically, the desired highly doped (up to 10 18 cm −3 ) epilayers could be achieved at any C/Si ratio with the addition of sufficient N 2 flow. It is therefore necessary to determine in which condition the epitaxial growth is the most efficient and the epilayers have the highest quality in terms of morphology and defects.…”

Section: Resultsmentioning

confidence: 99%

Study of Surface Morphology, Impurity Incorporation and Defect Generation during Homoepitaxial Growth of 4H-SiC Using Dichlorosilane

Song

Chandrashekhar

Sudarshan

2014

ECS J. Solid State Sci. Technol.

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The growth of 4 • off-axis 4H-SiC epilayers by chemical vapor deposition is studied using dichlorosilane as the Si precursor in a chimney reactor. The unintentional and intentional nitrogen doping at various C/Si ratios and N 2 flow rates are investigated. The C/Si ratio has a significant influence on the growth rate, surface morphology, conversion of basal plane dislocations (BPDs), and generation of other defects (e.g., in-growth stacking faults and morphological defects). Addition of N 2 has no obvious influence on growth rate and BPD conversion. It is preferable to grow high quality n + epilayers at a C/Si ratio in the range of 1.3-1.8 along with the addition of a suitable amount of N 2 in consideration of high growth rate, good surface morphology, and low defect density. In this case, the conversion ratio of BPDs to threading edge dislocations is greater than 99.8% regardless of N 2 addition. Therefore >99.8% substrate BPDs can be buried in an n + buffer layer, which is beneficial to SiC bipolar power devices. No special treatment prior to, during or after the epigrowth is necessary. The epilayers with doping concentration all the way from p − (∼1e15 cm −3 ) to semi-insulating, then to n + (∼1e18 cm −3 ), can be achieved, giving a great range of flexibility in growth using dichlorosilane precursor. Further optimization of in-situ etching and growth conditions to eliminate step bunching has also been suggested. 4H-silicon carbide (4H-SiC) is a promising wide bandgap material for high power electronic devices, owing to its unique thermal and electrical properties such as high breakdown field, high thermal conductivity, and high electron saturation velocity.1,2 Chemical vapor deposition (CVD) is a well-developed technique adopted in semiconductor industry to produce high purity and high quality thin films.3 Homoepitaxial growth of SiC via the CVD technique is one of the key steps in the fabrication of high performance SiC devices. Currently, chloride-based CVD has attracted much interest to potentially replace the traditional silane based CVD for SiC epitaxial growth to reduce the Si droplet formation at high growth rates, because of the higher bonding energy of Si-Cl (400 kJ/mol) than SiSi (226 kJ/mol).4 Dichlorosilane (SiH 2 Cl 2 , DCS) is a gas (boiling point: 8.2• C) at room temperature. It has been demonstrated that using DCS and propane (C 3 H 8 ) as the precursors, high crystalline quality 8• off-axis SiC epilayers were achieved at a high growth rate (up to 100 μm/h). 5,6 At present, the standard off-axis angle of commercially available SiC substrates is lowered to 4• to reduce the material loss during substrate preparation from the crystal boules.Step-bunching is a typical surface feature of the epilayers grown on 4• off-axis substrates, resulting in increase in surface roughness. 7Morphological defects, specifically the triangular defects and inverted pyramids, are prone to be generated in epigrowth on low off-axis angle substrates. 8 Hence, determination of optimized growth conditions to produce SiC ...

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Section: Resultsmentioning

confidence: 99%

Study of Surface Morphology, Impurity Incorporation and Defect Generation during Homoepitaxial Growth of 4H-SiC Using Dichlorosilane

Song

Chandrashekhar

Sudarshan

2014

ECS J. Solid State Sci. Technol.

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“…Theoretical studies have found that phosphorus atom prefers the silicon site in the SiC lattice [8], which has been confirmed by EPR studies [9,10] and growth experiments [7]. There have been several studies investigating the effect of different process parameters on the nitrogen atoms incorporation both experimentally [7,[11][12][13][14][15][16] and theoretically [17][18][19][20]; phosphorus incorporation has also been studied experimentally [7,13,21] and theoretically [22]. However, all these investigations are for the standard precursor mixture with silane and light hydrocarbons without any chlorine addition.…”

Section: Introductionmentioning

confidence: 84%

Donor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD

Pedersen

Beyer

Hassan

et al. 2009

Journal of Crystal Growth

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“…The substrate was maintained at a temperature of 1550 °C. 20 The N-doping mechanism used in the simulations is reported in Table 2 and Table S2 in the Supporting Information. With respect to the N-doping mechanism we previously proposed, this mechanism differs by including in the gas phase a reaction for the formation of the SiN radical, which we propose in the present study to be the main gas-phase precursor for the incorporation of nitrogen in SiC.…”

Section: Resultsmentioning

confidence: 99%

“…This reaction has been introduced to enforce the attainment of equilibrium between these species. d From Fiorucci et al 20 e Collisional with sticking coefficient equal to 1. f Collisional with fitted activation energy. consistency of the chemical and physical assumptions on the basis of which it was developed.…”

Section: Methodsmentioning

confidence: 99%

“…consistency of the chemical and physical assumptions on the basis of which it was developed. The kernel of the N-doping mechanism was taken from Fiorucci et al 20 and Meziere et al, 21 with respect to which it was modified in regard to the addition of one gas-phase reaction and part of the surface mechanism, from which was removed the reaction of dissociative adsorption of N 2 . In addition, the rate constant estimated by Caridade et al 43 was used for the reaction between N 2 and H to give N 2 H. The gasphase mechanism is reported in Table S2 in the Supporting Information, while the surface mechanism and the gas-phase reaction introduced in this work are reported in Table 2.…”

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

A Kinetic Analysis of the Growth and Doping Kinetics of the SiC Chemical Vapor Deposition Process

Cavallotti

Rossi

Ravasio

et al. 2014

Ind. Eng. Chem. Res.

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Mechanism of n-doping of silicon carbide epitaxial films

Cited by 6 publications

References 5 publications

Study of Surface Morphology, Impurity Incorporation and Defect Generation during Homoepitaxial Growth of 4H-SiC Using Dichlorosilane

Study of Surface Morphology, Impurity Incorporation and Defect Generation during Homoepitaxial Growth of 4H-SiC Using Dichlorosilane

Donor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD

A Kinetic Analysis of the Growth and Doping Kinetics of the SiC Chemical Vapor Deposition Process

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