Donor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD

Pedersen, Henrik; Beyer, Franziska Christine; Hassan, Jawad; Henry, Anne; Janzén, Erik

doi:10.1016/j.jcrysgro.2008.12.029

Cited by 27 publications

(33 citation statements)

References 32 publications

(84 reference statements)

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“…Concerning Ge concentration increase with GeH 4 flux, this is of course a classical trend for the dopants [29,30]. The general trend with temperature (Ge incorporation decrease with temperature increase) is also found for the dopants [22,31].…”

Section: Ge Incorporation Mechanismsupporting

confidence: 57%

Ge incorporation inside 4H-SiC during homoepitaxial growth by chemical vapor deposition

et al. 2014

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Section: Ge Incorporation Mechanismsupporting

confidence: 57%

Ge incorporation inside 4H-SiC during homoepitaxial growth by chemical vapor deposition

et al. 2014

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“…It should be noted that the nitrogen incorporation has previously been shown to be independent of growth rate in chloride-based CVD of SiC [20], and the difference in doping between layers grown with methane and ethylene is most likely due to different effective C/Si ratio on the surface when the two different precursors are used. The doping levels in the epitaxial layers thus suggest that the carbon supply to the surface is less efficient in the case of methane.…”

Section: Resultsmentioning

confidence: 99%

On the use of methane as a carbon precursor in Chemical Vapor Deposition of silicon carbide

Yazdanfar

Pedersen

Sukkaew

et al. 2014

Journal of Crystal Growth

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Abstract:It is generally considered that methane is not a suitable carbon precursor for growth of silicon carbide (SiC) epitaxial layers by chemical vapor deposition (CVD) since its use renders epitaxial layers with very high surface roughness. In this work we demonstrate that in fact SiC epitaxial layers with high-quality morphology can be grown using methane. It is shown that a key factor in obtaining high-quality material is tuning the C/Si ratio of the process gas mixture to a region where the growth is limited neither by carbon nor by silicon supplies. From the growth characteristics presented here, we argue that the reactivity of methane with the SiC surface is much higher than generally assumed in SiC CVD modeling today.

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“…• off-cut toward the [11][12][13][14][15][16][17][18][19][20] direction. All growth experiments were done on the Si-face of the substrate.…”

Section: Methodsmentioning

confidence: 99%

Finding the Optimum Chloride-Based Chemistry for Chemical Vapor Deposition of SiC

Yazdanfar

Danielsson

Kordina

et al. 2014

ECS J. Solid State Sci. Technol.

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Chemical vapor deposition of silicon carbide with a chloride-based chemistry can be done using several different silicon and carbon precursors. Here, we present a comparative study of SiCl 4 , SiHCl 3 , SiH 4 +HCl, C 3 H 8 , C 2 H 4 and CH 4 in an attempt to find the optimal precursor combination. We find that while the chlorinated silanes SiCl 4 and especially SiHCl 3 give higher growth rate than natural silane and HCl, SiH 4 +HCl gives better morphology at C/Si around 1 and SiCl 4 gives the best morphology at low C/Si. Our study shows no effect on doping incorporation with precursor chemistry. We suggest that these results can be explained by the number of reaction steps in the gas phase chemical reaction mechanisms for producing SiCl 2 , which is the most important Si species, and by formation of organosilicons in the gas phase. As carbon precursor, C 3 H 8 or C 2 H 4 are more or less equal in performance with a slight advantage for C 3 H 8 , CH 4 is however not a carbon precursor that should be used unless extraordinary growth conditions are For the last, approximately ten years, chloride-based chemistry has been studied for chemical vapor deposition (CVD) of electronic grade SiC.1 The addition of Cl to the gas mixture circumvents condensation of silicon droplets above the substrate since the stronger Si-Cl bond (400 kJ/mol or 4.15 eV) 2 prevents Si-Si bonds (226 kJ/mol or 2.34 eV) 2 to form. This allows a higher precursor concentration in the CVD gas mixture which enables higher growth rates of epitaxial SiC layers; growth rates exceeding 100 μm/h are common, compared to the 5-10 μm/h usually obtained for the standard, non-chlorinated chemistry based on silane (SiH 4 ) and small hydrocarbons like ethylene (C 2 H 4 ) or propane (C 3 H 8 ). Cl-based CVD chemistry is therefore seen as an enabler of SiC power device technology 1 , where approximately 100 μm thick, low doped (10 14 cm −3 ), epitaxial layers are required for devices capable of blocking voltages on the order of 10 kV.Addition of Cl can be done either through the addition of HCl to the standard precursors, by using a chlorinated silane molecule (SiH x Cl y ) instead of SiH 4 , by using a chlorinated hydrocarbon (CH x Cl y ) instead of C 3 H 8 /C 2 H 4 or by using a single molecule (SiH x C y Cl z ). All these approaches have been reported to be successful and capable of growth rates exceeding 100 μm/h. 1 However, the optimal precursor for Clbased CVD of SiC is still not identified, despite ten years of research on Cl-based CVD chemistry. The single molecule approach has been successful, 3 but the inherent locked C/Si ratio hinders an efficient control of the doping incorporation 4 in SiC. Thermochemical studies suggests that the use of CH x Cl y is not likely an optimal route since the C-Cl bond is found to break, allowing Si-Cl bonds to form.5 Thus the CH x Cl y approach is probably a chemical detour. There have been attempts to compare data from various groups 1,6 but these comparisons are hampered by the fact that the data are acquired in differ...

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Donor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD

Cited by 27 publications

References 32 publications

Ge incorporation inside 4H-SiC during homoepitaxial growth by chemical vapor deposition

Ge incorporation inside 4H-SiC during homoepitaxial growth by chemical vapor deposition

On the use of methane as a carbon precursor in Chemical Vapor Deposition of silicon carbide

Finding the Optimum Chloride-Based Chemistry for Chemical Vapor Deposition of SiC

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