Mechanism of molecular beam epitaxy growth of GaN nanowires on Si(111)

Debnath, Ratan; Meijers, R.; Richter, T.; Stoïca, T.; Calarco, Raffaella; Lüth, H.

doi:10.1063/1.2715119

Cited by 221 publications

(248 citation statements)

References 21 publications

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“…Moreover, the proposed GaN nanorod growth mechanism assumes that the Ga diffusion process along the nanorod sidewalls up to its apex can be a major contribution, thus, the wider the nanorod, the smaller its growth rate. 38 The authors suggested that the nanorod starts to grow on a GaN island once it reaches its critical size and becomes stable, following a process that depends on two contributions, 27 namely, (i) Ga atoms impinging on the nanorod apex will incorporate directly to the crystal; and (ii) Ga atoms arriving to the substrate surface will diffuse to the nanorods base, climb along the lateral sidewalls up to their apex and incorporate to the crystal, 27,32,38 as shown by the diagram in Fig. 10(b).…”

Section: B Catalyst-free Gan Nanorod Growthmentioning

confidence: 99%

“…Furthermore, a diffusion-induced growth model was suggested by Debnath et al, 38 as plotted in Fig. 11.…”

Section: B Catalyst-free Gan Nanorod Growthmentioning

confidence: 99%

“…This leads to GaN nanorod ensemble with short thick nanorods as well as thin long ones with a high aspect ratio. 38 Calarco et al investigated the nucleation and growth of GaN nanorods on Si (111) by MBE. 29 The nucleation density of GaN nanorods was found to be rapidly increased within 30 min.…”

Section: B Catalyst-free Gan Nanorod Growthmentioning

confidence: 99%

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GaN based nanorods for solid state lighting

Li¹,

Waag

2012

Journal of Applied Physics

491

394

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In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.

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Section: B Catalyst-free Gan Nanorod Growthmentioning

confidence: 99%

“…Furthermore, a diffusion-induced growth model was suggested by Debnath et al, 38 as plotted in Fig. 11.…”

Section: B Catalyst-free Gan Nanorod Growthmentioning

confidence: 99%

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GaN based nanorods for solid state lighting

Li¹,

Waag

2012

Journal of Applied Physics

491

394

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“…[7][8][9] The small footprint of the NWs on the substrate greatly relaxes issues related to the structural mismatch between substrate and NW. Many publications have already reported on the growth of homoepitaxial III-nitride NWs by plasma assisted molecular beam epitaxy ͑PAMBE͒, [10][11][12][13][14][15][16][17][18][19][20] including InGaN NWs on Si substrates. 21,22 However, to exploit the whole range of optoelectronic devices compatible with a NW design, the possibility to realize axial as well as radial hetero-and quantum structures is essential.…”

Section: Structural and Optical Properties Of Ingan-gan Nanowire Hetementioning

confidence: 99%

Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

Limbach

Gotschke

Stoïca

et al. 2011

Journal of Applied Physics

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InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

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“…10-12͒ and NW ensembles 13,14 has been proven. However, the processes of nucleation [15][16][17][18][19] and diffusion of adatoms [20][21][22][23] on the NW still represent interesting and lively discussion subjects as not all the aspects have been clarified. In addition, the understanding of the growth leads to further improvements of sample quality and of the control over the structures, which in turn is beneficial for device performances.…”

mentioning

confidence: 99%

Influence of the adatom diffusion on selective growth of GaN nanowire regular arrays

Gotschke

Schumann

Limbach

et al. 2011

Applied Physics Letters

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Molecular beam epitaxy (MBE) on patterned Si/AlN/Si(111) substrates was used to obtain regular arrays of uniform-size GaN nanowires (NWs). The silicon top layer has been patterned with e-beam lithography, resulting in uniform arrays of holes with different diameters (dh) and periods (P). While the NW length is almost insensitive to the array parameters, the diameter increases significantly with dh and P till it saturates at P values higher than 800 nm. A diffusion induced model was used to explain the experimental results with an effective diffusion length of the adatoms on the Si, estimated to be about 400 nm.

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Mechanism of molecular beam epitaxy growth of GaN nanowires on Si(111)

Cited by 221 publications

References 21 publications

GaN based nanorods for solid state lighting

GaN based nanorods for solid state lighting

Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

Influence of the adatom diffusion on selective growth of GaN nanowire regular arrays

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