2007
DOI: 10.1103/physrevlett.98.097002
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Mechanism of Enhancement in Electromagnetic Properties ofMgB2by Nano SiC Doping

Abstract: A comparative study of pure, SiC, and C doped MgB2 wires has revealed that the SiC doping allowed C substitution and MgB2 formation to take place simultaneously at low temperatures. C substitution enhances H_{c2}, while the defects, small grain size, and nanoinclusions induced by C incorporation and low-temperature processing are responsible for the improvement in J_{c}. The irreversibility field (H_{irr}) for the SiC doped sample reached the benchmarking value of 10 T at 20 K, exceeding that of NbTi at 4.2 K.… Show more

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Cited by 255 publications
(192 citation statements)
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“…The field dependence of the critical current measured by the standard four-probe method is shown in Figure 1a. Compared with other types of carbon doping, such as SiC doping, [26][27][28][29] the malic acid-doped sample studied in this work not only shows increased high-field critical current density, but also increased low-field critical current density, even comparable to that of NbTi, exceeding 10 5 A cm À2 at 4.2 K and 6 T. At higher temperature, for example at 20 K, the critical current density of SiC-doped samples has been reported to be decreased compared with the un-doped samples, but here, even at 20 K, the critical current density was increased.…”
Section: Resultsmentioning
confidence: 99%
“…The field dependence of the critical current measured by the standard four-probe method is shown in Figure 1a. Compared with other types of carbon doping, such as SiC doping, [26][27][28][29] the malic acid-doped sample studied in this work not only shows increased high-field critical current density, but also increased low-field critical current density, even comparable to that of NbTi, exceeding 10 5 A cm À2 at 4.2 K and 6 T. At higher temperature, for example at 20 K, the critical current density of SiC-doped samples has been reported to be decreased compared with the un-doped samples, but here, even at 20 K, the critical current density was increased.…”
Section: Resultsmentioning
confidence: 99%
“…GO doping decreased RRR by about 35%, introducing the defects through carbon substitution. [2][3][4][5][6][7]26 GO + Ag co-doping decreases the value of RRR by about 50%. Ag nanoparticles were dispersed on GO sheets, making them much more effective in creation of defects, in addition to the defects introduced by the C released from surface of GO sheets.…”
Section: Mgb 2 Characterizationmentioning
confidence: 99%
“…Considerable T C degradation 34 and the presence of impurity phases 35 can be observed. It is worth noting, however, that the reduction of T c due to nano-Ag addition is low compared to carbon dopants at the same level of doping 2,3,4 . The samples doped with 5wt.% nano-Ag and 2wt.% GO showed low resistivity values, however, the co-doped samples showed a much higher resistivity value.…”
Section: Mgb 2 Characterizationmentioning
confidence: 99%
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“…The combination of both graphene and a superconductor into a composite has great potential for electrical devices and large scale applications. MgB 2 , a superconductor with a simple composition and two-gap feature has great potential for large current carrying applications, as demonstrated through a series of chemical dopings (Dou, S. X. et al 2007). In the case of graphene's, the strict two-dimensionality and its high electrical and thermal conductivities, make it an ideal candidate for integrating/doping into MgB 2 in order to improve the superconducting properties.…”
Section: Introductionmentioning
confidence: 99%