Mechanism of ellipsometry monolayer oscillations during metalorganic vapor-phase epitaxy

Lee, Jeong-Sik; Sugou, S.; Masumoto, Yasuaki

doi:10.1063/1.373642

Cited by 7 publications

(3 citation statements)

References 18 publications

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“…Although spectroscopic ellipsometry (SE) can also observe the surface state in situ, it requires a high signal-to-noise ratio to observe the topmost state of the surface using devices such as a laser for the incident light, or a lock-in amplifier and a band pass filter. 10,11) In RA measurement, on the other hand, we can observe the surface with a very high sensitivity.…”

Section: Introductionmentioning

confidence: 99%

Kinetic Analysis of Surface Adsorption Layer in GaAs(001) Metalorganic Vapor Phase Epitaxy by In situ Reflectance Anisotropy Spectroscopy

Deura

Sugiyama

Nakano

et al. 2007

jjap

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A kinetic analysis of the surface adsorption layer of III/V semiconductors in metalorganic vapor phase epitaxy (MOVPE) was carried out by monitoring the temporal behavior of surface reconstruction that is assumed to be maintained during growth with the adsorption layers. A GaAs(001) surface was observed in situ using reflectance anisotropy spectroscopy (RAS), and both spectroscopic and kinetic analyses were performed when trimethylgallium (TMGa) was supplied intermittently while the supply of tertiarybutylarsine (TBAs) was continuous. When the flow of TMGa was switched on/off, the transient RA signal exhibited time constants of 0.2 -20 s. By observing the dependence of these time constants on the partial pressure of TMGa and substrate temperature, we considered that the time constant (t 0 ) at the start of TMGa supply corresponds to the adsorption of Ga from the gas phase to the adsorption layer, and two constants (i.e., t 1 and t 2 ) at the end of TMGa supply are associated with the crystallization of adsorbed Ga and the recovery of surface reconstruction, respectively. The equivalent thickness of the adsorption layer was estimated to be 0.19 monolayer thickness at 550 C.

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Section: Introductionmentioning

confidence: 99%

Kinetic Analysis of Surface Adsorption Layer in GaAs(001) Metalorganic Vapor Phase Epitaxy by In situ Reflectance Anisotropy Spectroscopy

Deura

Sugiyama

Nakano

et al. 2007

jjap

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“…Ostwald ripening of InAs quantum dots on GaAs(100) could be observed with in situ STM, and a combined RAS/in situ STM study revealed the dependence of InGaAs quantum dot formation on different surface reconstructions . InGaAs quantum dot formation and island nucleation were studied also by in situ ellipsometry …”

Section: Epitaxial Reference Surfacesmentioning

confidence: 94%

In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions

Supplie

May

Brückner

et al. 2017

Adv Materials Inter

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which he pioneered and established. In general, interfaces do not only determine electronic properties of the final device; their atomic order also highly affects growth kinetics and defect formation. Moreover, the design of solid-liquid and hybrid interfaces determines their chemical reactivity and stability. In situ monitoring of interface preparation, formation, and interfacial reactions thus promises efficient process control. Paired with a detailed understanding of interface formation mechanisms, however, the true power of in situ control is to allow for specific modification and tuning of interface formation for the device of choice. There are several excellent reviews on in situ approaches covering wide ranges of materials from basic science to applications as well as varieties of preparation and analysis techniques. [2][3][4][5][6][7][8][9][10][11] As indicated in Figure 1, this review will be focused on in situ control over interfaces of materials that are relevant for photoinduced reactions in high-efficiency solar energy conversion and sensing applications with in situ control of semiconductor/polymer/ biological interfaces. We will restrict the techniques to realistic and complex, non-ultrahigh-vacuum (UHV) ambient, where in situ control is most demandingbut also highly desired. The more complex the interfacial reactions are, the more important is the in situ characterization. Ex situ approaches can contribute to an indirect understanding of interface formation, but to understand and, finally, control the dynamic processes taking place, real-time measurements are appropriate. The challenge, we are facing, is twofold: On the one hand, increased interaction with the surrounding ambient causes higher complexity. Yet at the same time, it decreases the number of applicable techniques. On the other hand, those techniques are often elaborate and not necessarily easy to interpret. In a nutshell, we will discuss four main topics:(i) Surface preparation during growth of structures for highefficiency solar energy conversion: World-record conversion efficiencies in both photovoltaics [12,13] and solar water splitting [14] are achieved with multijunction solar cells based on epitaxial III/V compound semiconductor structures. We will discuss in situ controlled preparation Solar energy conversion and photoinduced bioactive sensors are representing topical scientific fields, where interfaces play a decisive role for efficient applications. The key to specifically tune these interfaces is a precise knowledge of interfacial structures and their formation on the microscopic, preferably atomic scale. Gaining thorough insight into interfacial reactions, however, is particularly challenging in relevant complex chemical environment. This review introduces a spectrum of material systems with corresponding interfaces significant for efficient applications in energy conversion and sensor technologies. It highlights appropriate analysis techniques capable of monitoring critical physicochemical reactions in situ during non-vacuu...

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“…Knowledge of the microscale growth mechanism in MOCVD plays an important role in the development of these devices. To date, the growth mechanism has mainly been investigated using optical techniques such as ellipsometry 1) and reflection anisotropy spectroscopy 2,3) which have revealed changes in local structures during the growth by observing changes in the group V coverage. However, the structural resolution of these techniques is limited to 30-50 micrometers due to their long wavelengths.…”

Section: Metalorganic Chemical Vapor Deposition (Mocvd) Ismentioning

confidence: 99%

Real-Time Observation of Fractional-Order X-ray Reflection Profiles of InP(001) During Step-Flow Growth

Fujikawa

Kawamura

Bhunia

et al. 2005

Jpn. J. Appl. Phys.

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Fractional-order X-ray reflection profiles of (2×1)-InP(001) have been observed for the first time during step-flow growth of metalorganic chemical vapor deposition. Changes of the profiles have revealed that the coverage of (2 ×1) structures during the growth depends on the flow rates of indium and phosphorus sources. After stopping the growth, a slow recovery of peak intensity was observed with a time constant of lager than 1 min which corresponds to the residence time of indium atoms on the surface.

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Mechanism of ellipsometry monolayer oscillations during metalorganic vapor-phase epitaxy

Cited by 7 publications

References 18 publications

Kinetic Analysis of Surface Adsorption Layer in GaAs(001) Metalorganic Vapor Phase Epitaxy by In situ Reflectance Anisotropy Spectroscopy

Kinetic Analysis of Surface Adsorption Layer in GaAs(001) Metalorganic Vapor Phase Epitaxy by In situ Reflectance Anisotropy Spectroscopy

In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions

Real-Time Observation of Fractional-Order X-ray Reflection Profiles of InP(001) During Step-Flow Growth

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