Mechanism of contamination build-up induced by fine electron probe irradiation

Yoshimura, Nagamitsu; Hirano, Haruo; Etoh, Terukazu

doi:10.1016/0042-207x(83)90658-9

Cited by 11 publications

(4 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…12 We circumvent this difficulty by taking advantage of the similarity between EBID and the specimen-contamination phenomenon in electron microscopy, by replacing the unknown diss ͑E͒ of the metal-bearing molecules with the electron-impact dissociation cross section of a hydrocarbon molecule frequently present in the electron microscope chamber and contributing to carbon contamination. 16 We used a recently published 17 general equation for the electronimpact dissociation cross section of C x H y in the gas phase,…”

Section: Electron-impact-induced Dissociationmentioning

confidence: 99%

Spatial resolution limits in electron-beam-induced deposition

Silvis-Cividjian

Hagen

Kruit

2005

Journal of Applied Physics

100

116

View full text Add to dashboard Cite

Electron-beam-induced deposition ͑EBID͒ is a versatile micro-and nanofabrication technique based on electron-induced dissociation of metal-carrying gas molecules adsorbed on a target. EBID has the advantage of direct deposition of three-dimensional structures on almost any target geometry. This technique has occasionally been used in focused electron-beam instruments, such as scanning electron microscopes, scanning transmission electron microscopes ͑STEM͒, or lithography machines. Experiments showed that the EBID spatial resolution, defined as the lateral size of a singular deposited dot or line, always exceeds the diameter of the electron beam. Until recently, no one has been able to fabricate EBID features smaller than 15-20 nm diameter, even if a 2-nm-diam electron-beam writer was used. Because of this, the prediction of EBID resolution is an intriguing problem. In this article, a procedure to theoretically estimate the EBID resolution for a given energetic electron beam, target, and gaseous precursor is described. This procedure offers the most complete approach to the EBID spatial resolution problem. An EBID model was developed based on electron interactions with the solid target and with the gaseous precursor. The spatial resolution of EBID can be influenced by many factors, of which two are quantified: the secondary electrons, suspected by almost all authors working in this field, and the delocalization of inelastic electron scattering, a poorly known effect. The results confirm the major influence played by the secondary electrons on the EBID resolution and show that the role of the delocalization of inelastic electron scattering is negligible. The model predicts that a 0.2-nm electron beam can deposit structures with minimum sizes between 0.2 and 2 nm, instead of the formerly assumed limit of 15-20 nm. The modeling results are compared with recent experimental results in which 1-nm W dots from a W͑CO͒ 6 precursor were written in a 200-kV STEM on a 30-nm SiN membrane.

show abstract

Section: Electron-impact-induced Dissociationmentioning

confidence: 99%

Spatial resolution limits in electron-beam-induced deposition

Silvis-Cividjian

Hagen

Kruit

2005

Journal of Applied Physics

100

116

View full text Add to dashboard Cite

show abstract

“…In addition to improvements in pumps, contamination within the column can be mitigated with a cold trap (Ennos, 1953), also known as an anticontamination device (ACD). The ACD is a liquid nitrogen-cooled trap that condenses vapors near the specimen to minimize their redeposition (Yoshimura et al, 1983). It should be mentioned that any other cold surface in the system will act the same way (e.g., x-ray detectors) (Reimer & Wächter, 1978).…”

Section: Contaminants Present On Tem Holdersmentioning

confidence: 99%

Contamination of TEM Holders Quantified and Mitigated With the Open-Hardware, High-Vacuum Bakeout System

et al. 2020

View full text Add to dashboard Cite

show abstract

“…There are some apparatuses with systems that cool some parts in a vacuum chamber, such as plasma etching systems, used to manufacture semiconductor devices and electron microscopes used to observe substrates on a microscopic scale. [17][18][19][20][21] In these systems, it is important to control the behavior of particles to ensure that the surface of the substrates will not be contaminated. In semiconductor processing, particle contamination can decrease the product yield.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of the small particle adhesion force on low temperature surface in high vacuum using atomic force microscopy

Miwa¹,

HASHIZUME²

2022

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

The adhesion force of small particles on a substrate surface depends on various parameters, including the surface roughness, temperature, and surrounding environment. In this study, atomic force microscopy was used to investigate the surface temperature dependence of the adhesion force of small silica particles on relatively smooth and rough Al substrates at temperatures below room temperature in high vacuum. The adhesion force did not depend on the temperature on the rough substrate. On the smooth substrate with a temperature decrease from 298 K, the adhesion force increased and was the largest at 273 K. Moreover, the adhesion force decreased from 273 to 213 K and remained almost constant below 213 K. The change in adhesion force was explained in terms of the surface diffusion of water molecules that formed capillaries. Its activation barrier was deduced to be 96 meV in the range of 273–213 K.

show abstract

Mechanism of contamination build-up induced by fine electron probe irradiation

Cited by 11 publications

References 5 publications

Spatial resolution limits in electron-beam-induced deposition

Spatial resolution limits in electron-beam-induced deposition

Contamination of TEM Holders Quantified and Mitigated With the Open-Hardware, High-Vacuum Bakeout System

Evaluation of the small particle adhesion force on low temperature surface in high vacuum using atomic force microscopy

Contact Info

Product

Resources

About