Mechanism of Chemical Mechanical Planarization Induced Edge Corrosion of Copper Line for Cu/Low-k SiOC Interconnects

Abstract

An analytical dislocation multiple-pile-up model is proposed to relate the yield stress of lamellar materials to lamellar thickness, d LM , and grain size, d GB . A simple analytical formula is derived, which gives a good correlation with the experimental results for relatively thick lamellae.