Mechanically enhanced p- and n-type Bi2Te3-based thermoelectric materials reprocessed from commercial ingots by ball milling and spark plasma sintering

Pan, Yu; Wei, Tian‐Ran; Cao, Qian; Li, Jing‐Feng

doi:10.1016/j.mseb.2015.03.011

Cited by 79 publications

(49 citation statements)

References 34 publications

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“…15,19,30 As mentioned above, the carrier concentration decreased when textured at low temperatures (673 and 733 K) but exhibited an increasing trend at higher texturing temperature (773 K). For Bi 2 (TeSe) 3 polycrystals, significant attention should be paid to the donor-like effect induced from mechanical deformation: 31 2V Bi 000 þ 3V ::…”

Section: Thermoelectric Propertiesmentioning

confidence: 63%

“…The ZT enhancement is also remarkable when compared with commercial n-type Bi 2 (TeSe) 3 ingots, whose maximum ZT was measured to be o0.9 in our previous work. 15 Although higher ZT values have been reported for p-type (BiSb) 2 Te 3 polycrystals, the present work has achieved a highly improved performance of n-type Bi 2 (TeSe) 3 alloys, which is required for high-efficiency thermoelectric modules. Figure 9b further presents the ZT max (gray columns) as well as the parameter (μ H /κ l )(m*/m 0 ) 3/2 (blue circles), which is proportional to the thermoelectric efficiency, 14 when compared with the ingots prepared by zone melting (red column) 15 and Bridgman methods (green column) 39 and with the ZT values of the textured samples.…”

Section: Thermoelectric Propertiesmentioning

confidence: 72%

“…15 Although higher ZT values have been reported for p-type (BiSb) 2 Te 3 polycrystals, the present work has achieved a highly improved performance of n-type Bi 2 (TeSe) 3 alloys, which is required for high-efficiency thermoelectric modules. Figure 9b further presents the ZT max (gray columns) as well as the parameter (μ H /κ l )(m*/m 0 ) 3/2 (blue circles), which is proportional to the thermoelectric efficiency, 14 when compared with the ingots prepared by zone melting (red column) 15 and Bridgman methods (green column) 39 and with the ZT values of the textured samples. 33,40 Large improvements for both the ZT max and (μ H /κ l )(m*/m 0 ) 3/2 have been achieved using a texturing treatment, and the highest (μ H /κ l ) (m*/m 0 ) 3/2 up to 29.5 × 10 − 3 m 3 K V − 1 s − 1 W − 1 was obtained for the sample TP 460-3.…”

Section: Thermoelectric Propertiesmentioning

confidence: 72%

“…[11][12][13] In addition, powder-processed thermoelectric materials also possess better mechanical properties, which are beneficial in device manufacturing. 14,15 In particular, spark plasma sintering (SPS) combined with mechanical alloying (MA) has been increasingly used as a facile powder process for synthesizing thermoelectric materials. [16][17][18][19] Nevertheless, for the ZT enhancement of Bi 2 Te 3 -based alloys fabricated by MA and SPS, the optimal composition needs to be redefined; it is no longer the same as the ingots because of massive point defects and strong donor-like effect.…”

Section: Introductionmentioning

confidence: 99%

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Thermoelectric performance enhancement in n-type Bi2(TeSe)3 alloys owing to nanoscale inhomogeneity combined with a spark plasma-textured microstructure

Pan

2016

NPG Asia Mater

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166

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Bi 2 Te 3 is a good thermoelectric compound that can be adjusted to p-or n-type with corresponding substitutions; however, less progress has been achieved for the property enhancement of n-type Bi 2 (TeSe) 3 compared with p-type (BiSb) 2 Te 3 . Textured n-type Bi 2 (TeSe) 3 with an enhanced thermoelectric performance has been developed in this study by combining texturing with in situ nanostructuring effects. The spark plasma-textured structure boosts the electrical transport properties and the power factors as benefits of the layered microstructure. It also leads to a simultaneous rise in the thermal conductivity along the a-axis. We developed a method to suppress increases in the thermal conductivity by inducing nanostructures, such as highly distorted regions and nanoscopic defect clusters, as well as dislocation loops that can form when texturing occurs at an optimized temperature. In this work, textured n-type Bi 2 (TeSe) 3 materials having enhanced thermoelectric performances within a low temperature range are developed with a maximum dimensionless figure of merit (ZT max ) exceeding 1.1 at 473 K. The present method, which synergetically utilizes the texturing and nanostructuring effects, could also be applied to other thermoelectric compounds having layered structures.

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Section: Thermoelectric Propertiesmentioning

confidence: 63%

Section: Thermoelectric Propertiesmentioning

confidence: 72%

Section: Thermoelectric Propertiesmentioning

confidence: 72%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Thermoelectric performance enhancement in n-type Bi2(TeSe)3 alloys owing to nanoscale inhomogeneity combined with a spark plasma-textured microstructure

Pan

2016

NPG Asia Mater

Self Cite

166

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“…Therefore, the goal of upshifting the service temperature in this work is translated into how to conduct intrinsic point defect engineering via extrinsic Sb and In doping. 13,[32][33][34] Intrinsic point defects are primarily entropic defects. They are thermally more robust than extrinsic point defects and therefore favor robust high-temperature performance.…”

Section: Introductionmentioning

confidence: 99%

Attaining high mid-temperature performance in (Bi,Sb)2Te3 thermoelectric materials via synergistic optimization

Zhu

et al. 2016

NPG Asia Mater

127

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For decades, zone-melted Bi 2 Te 3 -based alloys have been the most widely used thermoelectric materials with an optimal operation regime near room temperature. However, the abundant waste heat in the mid-temperature range poses a challenge; namely, how and to what extent the service temperature of Bi 2 Te 3 -based alloys can be upshifted to the mid-temperature regime. We report herein a synergistic optimization procedure for Indium doping and hot deformation that combines intrinsic point defect engineering, band structure engineering and multiscale microstructuring. Indium doping modulated the intrinsic point defects, broadened the band gap and thus suppressed the detrimental bipolar effect in the mid-temperature regime; in addition, hot deformation treatment rendered a multiscale microstructure favorable for phonon scattering and the donor-like effect helped optimize the carrier concentration. As a result, a peak value of zT of~1.4 was attained at 500 K, with a state-of-the-art average zT av of~1.3 between 400 and 600 K in Bi 0.3 Sb 1.625 In 0.075 Te 3 . These results demonstrate the efficacy of the multiple synergies that can also be applied to optimize other thermoelectric materials. INTRODUCTIONThermoelectricity is the simplest technology for direct heat-toelectricity power generation. Thermoelectric (TE) devices are all solid state, without rotation parts or working fluids, and are thus easy to miniaturize. These modular characteristics make TE devices reliable, durable and easy to use in tandem with other energy conversion technologies. 1,2 The energy conversion efficiency of a TE device is primarily determined by the TE material's dimensionless figure of merit, defined as zT = α 2 σT/κ, where α is the Seebeck coefficient, σ is the electrical conductivity, κ is the total thermal conductivity (including the lattice contribution κ L and the carrier contribution κ e ) and T is the absolute temperature. 2 zT is generally a function of temperature whereas waste heat is the energy source for TE power generation. It is useful to compare the optimal operation temperature ('service temperature') of state-of-the-art TE materials and the temperature range in which most of the waste heat is produced. State-of-the-art TE materials have their best zT values (those between 1 and 2) in different temperature regimes; for example, Bi 2 Te 3 works best near room temperature, 3,4 whereas PbTe, Mg 2 Si 1-x Sn x , Half-Heusler compounds and filled skutterudites generally reach their best performance above 600 K. [5][6][7][8][9][10][11][12][13][14] There is a conspicuous lack of high-performance TE materials between 400 and 600 K, the

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Changing the Band Gaps by Controlling the Distribution of Initial Particle Size to Improve the Power Factor of N‐Type Bi₂Te₃ Based Polycrystalline Bulks

Zhang

Fan

et al. 2017

Adv Eng Mater

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In this work, n-type Bi 2 Te 2.7 Se 0.3 bulks are prepared by resistance pressure sintering technique from different particle sized powders, and the microstructure and electrical transport properties are investigated as function of the initial particle size distribution. With the initial particle size decreasing, more antisite defects, grain-boundaries and interface defects are introduced, and lead to a larger carrier concentration due to donor-like effect and a lower mobility due to the increasing grain boundary and carrier scattering, which results in a lower Seebeck coefficient and electrical resistivity. As a result, a maximum power factor of about 2.89 mW mK À2 at room temperature is achieved for the bulk sintered from the mix powders with different particle size distribution due to the optimization of the carrier concentration. The band gaps and the intrinsic excitation temperature are effectively adjusted by controlling the particle size in a narrow distribution. The sample sintered from the powders below 400 mesh has the highest average power factor above 2.44 mW mK À2 in the whole testing temperature range due to the improving band gaps and intrinsic excitation temperature.

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Mechanically enhanced p- and n-type Bi2Te3-based thermoelectric materials reprocessed from commercial ingots by ball milling and spark plasma sintering

Cited by 79 publications

References 34 publications

Thermoelectric performance enhancement in n-type Bi2(TeSe)3 alloys owing to nanoscale inhomogeneity combined with a spark plasma-textured microstructure

Thermoelectric performance enhancement in n-type Bi2(TeSe)3 alloys owing to nanoscale inhomogeneity combined with a spark plasma-textured microstructure

Attaining high mid-temperature performance in (Bi,Sb)2Te3 thermoelectric materials via synergistic optimization

Changing the Band Gaps by Controlling the Distribution of Initial Particle Size to Improve the Power Factor of N‐Type Bi₂Te₃ Based Polycrystalline Bulks

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Mechanically enhanced p- and n-type Bi2Te3-based thermoelectric materials reprocessed from commercial ingots by ball milling and spark plasma sintering

Cited by 79 publications

References 34 publications

Thermoelectric performance enhancement in n-type Bi2(TeSe)3 alloys owing to nanoscale inhomogeneity combined with a spark plasma-textured microstructure

Thermoelectric performance enhancement in n-type Bi2(TeSe)3 alloys owing to nanoscale inhomogeneity combined with a spark plasma-textured microstructure

Attaining high mid-temperature performance in (Bi,Sb)2Te3 thermoelectric materials via synergistic optimization

Changing the Band Gaps by Controlling the Distribution of Initial Particle Size to Improve the Power Factor of N‐Type Bi2Te3 Based Polycrystalline Bulks

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Product

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Changing the Band Gaps by Controlling the Distribution of Initial Particle Size to Improve the Power Factor of N‐Type Bi₂Te₃ Based Polycrystalline Bulks