2017
DOI: 10.1088/1361-6528/aa536d
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Mechanical stress-induced switching kinetics of ferroelectric thin films at the nanoscale

Abstract: We investigate ferroelectric domain structure and piezoelectric response under variable mechanical compressive stress in Pb(ZrTiO)O (PZT) thin films using high-resolution piezoresponse force microscopy (PFM) and an in situ sample bending stage. Measurements reveal a drastic change in the ferroelectric domain structure which is presented along with details of the mediating switching process involving domain wall motion, nucleation, and domain wall roughening under an applied external mechanical stimulus. Furthe… Show more

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Cited by 24 publications
(20 citation statements)
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References 40 publications
(61 reference statements)
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“…Straining the sample led also to another change in the structural properties-increase in the PZT tetragonality, which in turn was accompanied by an increase of the remanent piezoresponse as well as the area integrated within the hysteresis loop. We suggest that these observations are in agreement with the existing literature related to the effects of either lattice matching engineering (by means of varying the substrates) [1,[29][30][31] or in situ bending [11,12,32] on the hysteresis loop and stability of switched domains. However, the in situ strain tunability during structural and functional characterization allows bridging between these two effects of substrate clamping and flexing in ferroelectrics, i.e., between the effects of intrinsic and extrinsic strains (note that the strain tunability is not limited for compensating substrate clamping and that strain can be continuously controlled in this cross-characterization technique).…”
Section: Discussionsupporting
confidence: 92%
“…Straining the sample led also to another change in the structural properties-increase in the PZT tetragonality, which in turn was accompanied by an increase of the remanent piezoresponse as well as the area integrated within the hysteresis loop. We suggest that these observations are in agreement with the existing literature related to the effects of either lattice matching engineering (by means of varying the substrates) [1,[29][30][31] or in situ bending [11,12,32] on the hysteresis loop and stability of switched domains. However, the in situ strain tunability during structural and functional characterization allows bridging between these two effects of substrate clamping and flexing in ferroelectrics, i.e., between the effects of intrinsic and extrinsic strains (note that the strain tunability is not limited for compensating substrate clamping and that strain can be continuously controlled in this cross-characterization technique).…”
Section: Discussionsupporting
confidence: 92%
“…Furthermore, electric bias induced correlated ferroelectric and phase switching were investigated by PFM, and the strength of EMC was found to be dependent of the thickness of BFO film . On the other hand, stress‐induced ferroelectric switching kinetics of PZT film have been studied using the similar method …”
Section: Examples Of Materials Systems Investigated Using Spm Techniquesmentioning
confidence: 99%
“…Multifunctional bismuth ferrite (BFO), with coupled magnetic, electromechanical, semiconducting and nonlinear optical properties at room temperature, is a promising material for applications ranging from magnetoelectric information storage, spintronic devices, nano-and micro-electromechanical systems, to switchable diodes and integrated electrooptical and electroacoustic elements [1][2][3][4][5][6][7][8][9].…”
Section: Introductionmentioning
confidence: 99%