Probing of Local Multifield Coupling Phenomena of Advanced Materials by Scanning Probe Microscopy Techniques

Li, Tao; Zeng, Kaiyang

doi:10.1002/adma.201803064

Cited by 27 publications

(15 citation statements)

References 277 publications

(397 reference statements)

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“…The superior piezoelectric and ferroelectric properties of ferroelectric materials have made them promising candidates for non-volatile random access memories (NVRAMs), microelectromechanical systems (MEMS), high-performance transducers, sensors, and actuators [ 1 , 2 , 3 ]. These applications are closely related to their domain configurations and polarization states, motivating extensive investigations on the domain structures and polarization switching characteristics of ferroelectric materials [ 2 , 4 , 5 ]. With the rapid development of the scanning probe microscopy (SPM) technique, it has already been widely used for investigating ferroelectric domains on the micro- and nano-scale [ 5 , 6 , 7 ].…”

Section: Introductionmentioning

confidence: 99%

Humidity Effects on Domain Structure and Polarization Switching of Pb(Zn1/3Nb2/3)O3-x%PbTiO3 (PZN-x%PT) Single Crystals

Wang

Zeng

2021

Materials

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The effect of relative humidity on the domain structure imaging and polarization switching process of Pb(Zn1/3Nb2/3)O3-x%PbTiO3 (PZN-x%PT) ferroelectric single crystals has been investigated by means of the piezoresponse force microscopy (PFM) and piezoresponse force spectroscopy (PFS) techniques. It was found that the PFM amplitude increases with the relative humidity, and that the ferroelectric hysteresis loops at different relative humidity levels show that the coercive bias decreases with the increase in relative humidity. These observed phenomena are attributed to the existence of the water layer between the probe tip and the sample surface in a humid atmosphere, which could affect the effect of the electric field distribution and screening properties at the ferroelectric sample surface. These results provide a better understanding of the water adsorption phenomena at the nanoscale in regard to the fundamental understanding of ferroelectrics’ properties.

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Section: Introductionmentioning

confidence: 99%

Humidity Effects on Domain Structure and Polarization Switching of Pb(Zn1/3Nb2/3)O3-x%PbTiO3 (PZN-x%PT) Single Crystals

Wang

Zeng

2021

Materials

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“…Under this scenario, the conductive tip sweeps across the substrate accompanied by a constant tip-sample interaction force. [6,7] As a derivative of AFM originated from the electrical mode of scanning probe microscopy, [8] C-AFM with a set of current amplifiers attached to the microscope can be devoted to imagining the morphology and characterizing local electrical properties of the sample surface simultaneously at microscopic scale, even under the ambient environment. [9] Also, the current-voltage characteristics at some points on sample surface could be expediently captured by C-AFM with high resolution.…”

mentioning

confidence: 99%

“…[33] Also, multiple fields such as electric, optical, chemical, and force fields, can be coupled with C-AFM technique to character the local multifield coupling phenomenon. [6] Thus, C-AFM demonstrated the unique advantage for fast, exact, and nondestructive diagnoses of perovskite materials and devices. [11] Many excellent reviews have summarized the unique possibilities offered by the scanning probe microscopy for studying perovskite materials and device challenges.…”

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confidence: 99%

Emerging Conductive Atomic Force Microscopy for Metal Halide Perovskite Materials and Solar Cells

Zhang

et al. 2020

Advanced Energy Materials

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Metal halide perovskite materials, benefiting from a combination of outstanding optoelectronic properties and low‐cost solution‐preparation processes, show tremendous potential for optoelectronics and photovoltaics. However, the nanoscale inhomogeneities of the electronic properties of perovskite materials cause a number of difficulties, such as recombination, stability, and hysteresis, all of which seriously restrict device performance. Scanning probe microscopy, as a high‐resolution imaging technique, has been widely used to connect local properties and micro‐area morphologies to overall device performance. Conductive atomic force microscopy (C‐AFM) can realize a real‐space visualization of topography coupled with optoelectronic properties on a microscopic scale and thereby is uniquely suited to probe the local effects of perovskite materials and devices. The fundamental principles, alternative operation modes, and development of C‐AFM are comprehensively reviewed, and applications in perovskite solar cells (PSCs) for electronic transport behavior, ion migration and hysteresis, ferroelectric polarization, and facet orientation investigation are discussed. A comprehensive understanding and summary of up‐to‐date applications in PSCs is beneficial to further fully exploit the potential of such an emerging technique, so as to provide a novel and effective approach for perovskite materials analysis.

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“…[22] For the PFM measurements, the CVD grown In 2 Se 3 nanoflake with about 5 nm thickness was transferred onto a conductive substrate (e.g., heavily p-doped silicon with a 50 nm gold film) with the assistance of polymethyl methacrylate film ( Figure 2d). Subsequently, the direct observation of spontaneous polarization and its inversion under an external electric field was performed using the piezoresponse force microscopy (PFM).…”

Section: Ferroelectricity Characterizationsmentioning

confidence: 99%

Intrinsic Dipole Coupling in 2D van der Waals Ferroelectrics for Gate‐Controlled Switchable Rectifier

Dai

Wang

et al. 2019

Adv Elect Materials

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OOP) and in-plane (IP) ferroelectricity could be easily achieved in some atomically thin vdWs 2D ferroelectric films, such as SnTe, CuInP 2 S 6 , LiAlTe 2 , and In 2 Se 3 . [8][9][10][11][12][13][14] Particularly, different from ultrathin SnTe and CuInP 2 S 6 , whose polarization only involves either pure IP or OOP orientations, atomically thin 2D In 2 Se 3 shows both IP and OOP ferroelectricity in its ground state of the α phase. [12] And the IP and OOP polarizations of 2D α-In 2 Se 3 have strong interrelated coupling. [15][16][17][18] In the previous work, we found that the OOP dipole in trilayer In 2 Se 3 is locked by the IP lattice asymmetry and its switching is related to the inversion of IP lattice orientation. [18] Up to date, there are few reports in the literature regarding ultimate miniature switchable rectifiers made of these atomically thin 2D ferroelectrics by utilizing the dipole polarization coupling. [19] Here, we report the fabrication of a gate-controlled switchable ferroelectric diode based on the single crystal of α-In 2 Se 3 by utilizing the interrelated coupling effect of OOP and IP polarizations (Figure 1). This ferroelectric diode can be inversed effectively by switching the gate bias between the negative (Figure 1a) and the positive configurations (Figure 1b). With a good rectification property of the ferroelectric diode, a switchable dynamic half-wave rectifier was realized. This kind of 2D ferroelectric diode has the advantages of simplicity in fabrication compatibility with complementary Miniaturization of device elements, such as ferroelectric diodes, depends on the downscaling of ferroelectric film, which is also crucial for developing high-density information storage technologies of ferroelectric random access memories (FeRAMs). Recently emerged ferroelectric two-dimensional (2D) van der Waals (vdWs) layered materials bring an additional opportunity to further increase the density of FeRAMs. A lateral, switchable rectifier is designed and fabricated based on atomically thin 2D α-In 2 Se 3 ferroelectric diodes, thus breaking the thickness limitation of conventional ferroelectric films and achieving an unprecedented level of miniaturization. This is realized through the interrelated coupling between out-of-plane and in-plane dipoles at room temperature; that is, horizontal polarization reversal can be effectively controlled through a vertical electric field. Being further explored as a switchable rectifier, the obtained maximum value of rectification ratio for the α-In 2 Se 3 based ferroelectric diode can reach up to 2.5 × 10 3 . These results indicate that 2D ferroelectric semiconductors can offer a pathway to develop next-generation multifunctional electronics. www.advelectronicmat.de metal-oxide-semiconductor (CMOS) technology, and superior electrical rectifying characteristics, showing great potential for future integrated electronic applications.

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Probing of Local Multifield Coupling Phenomena of Advanced Materials by Scanning Probe Microscopy Techniques

Cited by 27 publications

References 277 publications

Humidity Effects on Domain Structure and Polarization Switching of Pb(Zn1/3Nb2/3)O3-x%PbTiO3 (PZN-x%PT) Single Crystals

Humidity Effects on Domain Structure and Polarization Switching of Pb(Zn1/3Nb2/3)O3-x%PbTiO3 (PZN-x%PT) Single Crystals

Emerging Conductive Atomic Force Microscopy for Metal Halide Perovskite Materials and Solar Cells

Intrinsic Dipole Coupling in 2D van der Waals Ferroelectrics for Gate‐Controlled Switchable Rectifier

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