Mechanical stress effect on leakage current in Bi3.25La0.75Ti3O12 thin films

Wu, Xiumei; Liu, Er; Xiang-jiang, LI; Zhai, Ya; Chen, Hua; Xu, Mingxiang

doi:10.1016/j.jallcom.2015.04.043

Cited by 3 publications

(1 citation statement)

References 30 publications

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“…Some experimental reports on the effect of the mechanical stress on the leakage current pointed out that such a reorientation process of domains under stress could reduce the density of the domain walls, which is known to play an important role in conducting, and so it may facilitate the suppression of the leakage current. [31] Finally, the effects of temperature (0.5U 0 /k B , 1U 0 /k B , and 1.5U 0 /k B ) on the hysteresis loops of defect-free samples, as well as on samples featuring 1% of the dipoles pinned in the +z direction, are shown in Fig. 7.…”

Section: Resultsmentioning

confidence: 97%

Hysteresis loop behaviors of ferroelectric thin films: A Monte Carlo simulation study

et al. 2015

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The ferroelectric response of bismuth titanate Bi 4 Ti 3 O 12 (BIT) thin film is studied through a Monte Carlo simulation of hysteresis loops. The ferroelectric system is described by using a Diffour Hamiltonian with three terms: the electric field applied in the z direction, the nearest dipole-dipole interaction in the transversal (x-y) direction, and the nearest dipole-dipole interaction in the direction perpendicular to the thin film (the z axis). In the sample construction, we take into consideration the dipole orientations of the monoclinic and orthorhombic structures that can appear in BIT at low temperature in the ferroelectric state. The effects of temperature, stress, and the concentration of pinned dipole defects are assessed by using the hysteresis loops. The results indicate the changes in the hysteresis area with temperature and stress, and the asymmetric hysteresis loops exhibit evidence of the imprint failure mechanism with the emergence of pinned dipolar defects. The simulated shift in the hysteresis loops conforms to the experimental ferroelectric response.

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Section: Resultsmentioning

confidence: 97%

Hysteresis loop behaviors of ferroelectric thin films: A Monte Carlo simulation study

et al. 2015

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Characterization of highly (117)-oriented Bi 3.25 La 0.75 Ti 3 O 12 thin films prepared by rf-magnetron sputtering technique

Cheng

et al. 2018

Solid State Communications

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Integration of c-axis oriented Bi3.15Nd0.85Ti2.95Hf0.05O12/La0.67Sr0.33MnO3 ferromagnetic-ferroelectric composite film on Si substrate

Duan

Cui

Zhao

et al. 2017

Sci Rep

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A La0.67Sr0.33MnO3 (LSMO) ferromagnetic layer and a Nd3+/Hf4+ co-substituted Bi4Ti3O12 (Bi3.15Nd0.85Ti3-xHfxO12 (BNTHx, x = 0, 0.025, 0.05, 0.1 and 0.15)) ferroelectric layer were successively deposited onto the (00 l)-oriented LaNiO3 (LNO) layer buffered (001) Si substrate via all chemical solution deposition (CSD) method. As a result, the BNTHx/LSMO ferromagnetic-ferroelectric composite films integrated on Si substrate exhibit high c-axis orientation. The Nd3+/Hf4+ co-substituted BNTHx films have the lower leakage current and the better ferroelectric properties than the mono-substituted Bi4Ti3O12 (Bi3.15Nd0.85Ti3O12 and Bi4Ti2.95Hf0.05O12) films. In particular, the BNTH0.05/LSMO/LNO film has the lowest leakage current density of 2.5 × 10−7 A/cm2 at 200 kV/cm, and the highest remnant polarization (Pr) of 27.3 μC/cm2. The BNTH0.05/LSMO/LNO composite film also exhibits the soft ferromagnetism characteristics with a high saturated magnetization of 258 emu/cm3 at 300 K, and the excellent magnetoelectric (ME) effect. The variations of ME voltage coefficient α E values with DC bias magnetic field H bias shows that the BNTH0.05/LSMO/LNO film has the high α E value at near zero H bias. Moreover, at H bias = 0 Oe, the α E value gradually increases from zero with the increasing of the AC magnetic field frequency, and eventually reaches about 18.9 V/cm·Oe at 100 kHz, suggesting the existence of self-biased ME effect.

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Mechanical stress effect on leakage current in Bi3.25La0.75Ti3O12 thin films

Cited by 3 publications

References 30 publications

Hysteresis loop behaviors of ferroelectric thin films: A Monte Carlo simulation study

Hysteresis loop behaviors of ferroelectric thin films: A Monte Carlo simulation study

Characterization of highly (117)-oriented Bi 3.25 La 0.75 Ti 3 O 12 thin films prepared by rf-magnetron sputtering technique

Integration of c-axis oriented Bi3.15Nd0.85Ti2.95Hf0.05O12/La0.67Sr0.33MnO3 ferromagnetic-ferroelectric composite film on Si substrate

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