Mechanical stress effect on imprint behavior of integrated ferroelectric capacitors

Gruverman, Alexei; Rodriguez, Brian J.; Kingon, Angus I.; Nemanich, R. J.; Tagantsev, A. K.; Cross, Jeffrey S.; Tsukada, Masaru

doi:10.1063/1.1593830

Cited by 236 publications

(179 citation statements)

References 22 publications

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“…Vertical PFM ͑VPFM͒ and lateral PFM ͑LPFM͒ imaging methods, used to detect out-of-plane and in-plane polarization components, respectively, have been described in detail elsewhere. [5][6][7][11][12][13][14][15][16][17][18] The modulation voltage ͑typically 0.6 Vrms at 10 kHz͒ was applied to the top electrode of the capacitor using a conduca͒ Author to whom correspondence should be addressed; electronic mail: alexei -gruverman@ncsu.edu tive PFM tip, which was also used to detect the piezoelectric response of the capacitor. Commercially available Pt-coated Si rectangular cantilevers ͑1.0-2.6 N/m force constant͒ have been used in this study.…”

Section: Methodsmentioning

confidence: 99%

“…Among the accomplishments of the PFM approach is an insight into spatial variability issues of ferroelectric capacitors. [8][9][10][11][12] In addition, the role of mechanical stress in the spatial inhomogeneity of switching behavior in ferroelectric capacitors has recently been emphasized by PFM. 10,11 To better understand a nanoscale mechanism of switching in polycrystalline films it would be helpful to reconstruct the three-dimensional domain arrangement at the subgrain level.…”

Section: Introductionmentioning

confidence: 99%

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Three-dimensional high-resolution reconstruction of polarization in ferroelectric capacitors by piezoresponse force microscopy

Rodriguez

Gruverman

Kingon

et al. 2004

Journal of Applied Physics

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Nemanich, R. J.; and Cross, J. S., "Three-dimensional high-resolution reconstruction of polarization in ferroelectric capacitors by piezoresponse force microscopy" (2004 A combination of vertical and lateral piezoresponse force microscopy ͑VPFM and LPFM, respectively͒ has been used to map the out-of-plane and in-plane polarization distribution, respectively, of ͑111͒-oriented Pb(Zr,Ti)O 3 -based ͑PZT͒ ferroelectric patterned and reactively-ion-etched capacitors. While VPFM and LPFM have previously been used to determine the orientation of the polarization vector in ferroelectric crystals and thin films, this is the first time the technique has been applied to determine the three-dimensional polarization distribution in thin-film capacitors and, as such, is of importance to the implementation of nonvolatile ferroelectric random access memory. Sequential VPFM and LPFM imaging have been performed in poled 1 ϫ1.5 m 2 PZT capacitors. Subsequent quantitative analysis of the obtained piezoresponse images allowed the three-dimensional reconstruction of the domain arrangement in the PZT layers of the capacitors. It has been found that the poled capacitors, which appear as uniformly polarized in VPFM, are in fact in a polydomain state as is detected by LPFM and contain 90°domain walls. Despite the polycrystallinity of the PZT layer, regions larger than the average PZT grain size are found to have the same polarization orientation. This technique has potential for clarifying the switching behavior and imprint mechanism in micro-and nanoscale ferroelectric capacitors.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Three-dimensional high-resolution reconstruction of polarization in ferroelectric capacitors by piezoresponse force microscopy

Rodriguez

Gruverman

Kingon

et al. 2004

Journal of Applied Physics

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“…They found that the flexoelectricity-induced electric field could be large and tunable in ferroelectric HoMnO 3 epitaxial thin films. They directly estimated the flexoelectricity-driven electric field using the equation [18,42] …”

Section: (B) Domain Configurationsmentioning

confidence: 99%

Giant flexoelectric effect through interfacial strain relaxation

Lee

Noh

2012

Phil. Trans. R. Soc. A.

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Interfacial strain gradients in oxide epitaxial thin films provide an interesting opportunity to study flexoelectric effects and their potential applications. Oxide epitaxial thin films can exhibit giant and tunable flexoelectric effects, which are six or seven orders of magnitude larger than those in conventional bulk solids. The strain gradient in an oxide epitaxial thin film can generate an electric field above 1 MV m −1 by flexoelectricity, large enough to affect the physical properties of the film. Giant flexoelectric effects on ferroelectric properties are discussed in this overview of recent experimental observations.

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“…The origin of the self-polarization in ferroelectric thin films has been discussed in terms of different mechanisms such as Schottky barriers, 22 lead vacancies, 23 mechanical coupling between the film and the substrate, 24 formation temperature of the ferroelectric phase, 25 and some others. When the top and bottom electrodes of a metal/ferroelectric/ metal configuration are made of different materials, trapped charges appear near the bottom ferroelectric-electrode interface leading to a build-in electric field responsible for the self-polarization.…”

Section: Resultsmentioning

confidence: 99%

“…Such defects appear in these materials due to several factors such as PbO loss and oxygen pressure during the synthesis or donor/acceptor impurities introduced in the perovskite ABO 3 structure. 24 Additionally, strain gradients along the film depth sometimes appear in epitaxial films due to a perfect match between lattice parameters of film-substrate. This strain gradient is another mechanism responsible for the self-polarization.…”

Section: Resultsmentioning

confidence: 99%

Thickness effect on the structure, grain size, and local piezoresponse of self-polarized lead lanthanum zirconate titanate thin films

Melo

Araújo

Shvartsman

et al. 2016

Journal of Applied Physics

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Polycrystalline lanthanum lead zirconate titanate (PLZT) thin films were deposited on Pt/TiO2/SiO2/Si substrates to study the effects of the thickness and grain size on their structural and piezoresponse properties at nanoscale. Thinner PLZT films show a slight (100)-orientation tendency that tends to random orientation for the thicker film, while microstrain and crystallite size increases almost linearly with increasing thickness. Piezoresponse force microscopy and autocorrelation function technique were used to demonstrate the existence of local self-polarization effect and to study the thickness dependence of correlation length. The obtained results ruled out the bulk mechanisms and suggest that Schottky barriers near the film-substrate are likely responsible for a build-in electric field in the films. Larger correlation length evidence that this build-in field increases the number of coexisting polarization directions in larger grains leading to an alignment of macrodomains in thinner films.

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Mechanical stress effect on imprint behavior of integrated ferroelectric capacitors

Abstract: Kingon, A. I.; Nemanich, R. J.; Tagantsev, A. K.; Cross, J. S.; and Tsukada, M., "Mechanical stress effect on imprint behavior of integrated ferroelectric capacitors" (2003). Alexei Gruverman Publications. 11.

Cited by 236 publications

References 22 publications

Three-dimensional high-resolution reconstruction of polarization in ferroelectric capacitors by piezoresponse force microscopy

Three-dimensional high-resolution reconstruction of polarization in ferroelectric capacitors by piezoresponse force microscopy

Giant flexoelectric effect through interfacial strain relaxation

Thickness effect on the structure, grain size, and local piezoresponse of self-polarized lead lanthanum zirconate titanate thin films

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