Mechanical Stress Dependence of Radiation Effects in MOS Structures

Kasama, Kunihiko; Toyokawa, Fumitoshi; Tsukiji, Masaru; Sakamoto, M.; Kobayashi, K.

doi:10.1109/tns.1986.4334580

Cited by 57 publications

(8 citation statements)

References 19 publications

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“…On its turn, this effect can be compensated by the introduction of a strained Si channel. As shown earlier [2], the strain will not only affect the mobility, but it will also influence the radiation behavior of the device. Total dose effects in triple gate devices have recently been reported [3], [4].…”

Section: Introductionmentioning

confidence: 83%

Geometry and Strain Dependence of the Proton Radiation Behavior of MuGFET Devices

Put

Simoen

Collaert

et al. 2007

IEEE Trans. Nucl. Sci.

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The proton irradiation effects on n-MuGFET devices with three different geometries (single fin, wide fin and multiple fin) are studied. Also, the effect of tensile strain in the fin on the radiation behavior is investigated.A fundamental difference in the radiation behavior between the non-strained and the strained devices is found. The degradation of the strained devices is most affected by the mobility decrease of the backside transistor. The non-strained devices show a much lesser back gate mobility degradation. For these devices the creation of positive oxide traps is dominant. This shifts the onset of the back channel to lower gate voltages, inducing a transconductance increase at intermediate gate voltages. This effect is less pronounced for single fin MuGFETs. At higher gate voltage, the transconductance decreases for the strained and increases for the non-strained transistors.

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Section: Introductionmentioning

confidence: 83%

Geometry and Strain Dependence of the Proton Radiation Behavior of MuGFET Devices

Put

Simoen

Collaert

et al. 2007

IEEE Trans. Nucl. Sci.

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“…In contrast to the reported stress dependence of the nMOSFET threshold voltage shift under irradiation [14], both applied tensile and compressive uniaxial stress reduce the threshold voltage shifts in devices with and dielectrics in Fig. 5 that are either irradiated under bias, or subjected only to bias stress without irradiation, for comparison.…”

Section: A Radiation Induced Threshold Voltage Shifts Under Mechanicmentioning

confidence: 61%

“…Hole trapping is observed to be dominant in [11], [12] dielectric layers, similar to [13]. The effects of mechanical stress on the ionizing radiation response of -based MOS devices have been reported [14], [15], but the mechanical stress ( 4 MPa) produced in these studies by changing the gate electrode thickness is much smaller than that used in strained-Si technology ( 1 GPa).…”

mentioning

confidence: 88%

Total Ionizing Dose Effects on Strained ${\rm HfO}_{2}$-Based nMOSFETs

Park

Dixit

Choi

et al. 2008

IEEE Trans. Nucl. Sci.

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Radiation-induced charge trapping and mobility degradation are measured on uniaxially stressed HfO 2 -based nMOSFETs. Controlled external mechanical stress is applied via a four-point bending jig while the samples are irradiated using 10-keV X-rays. Positive charge trapping is observed for unstressed devices, and for devices irradiated under both compressive and tensile stress. Reduced trapped charge is measured as the uniaxial stress level increases. These results suggest that the increased stress leads to a reconfiguration of defect microstructure, as compared to the unstressed devices. The reconfiguration consists of changes in bond lengths and angles and a corresponding change in trap energy levels, which can (1) reduce the probability that a defect can capture holes, (2) increase the probability for electron and trapped-hole recombination, and/or (3) increase the mobility of the transporting holes in the oxides of the devices that are irradiated under stress. These results show that increased mechanical stress in high-k dielectrics does not degrade their radiation hardness. We also observe that the post-irradiation channel mobility degrades less in uniaxially stressed devices than unstressed devices.Index Terms-Hafnium oxide (HfO 2 ), high-k, metal-oxidesemiconductor-field-effect-transistors (MOSFETs), radiation damage, strained-silicon, uniaxial, X-ray.

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“…In particular, it has been shown that in a symmetric layout, the stresses from adjacent STI edges (STI space) are added to the original STI stress [7,14]. For narrow devices where the STI spacing is smaller, there is more compressive stress, which results in variations in both doping concentration and amount of charge trapping [17,18]. In addition, random dopant fluctuations that result from variations in the implanted impurity concentration can also lead to variability in the as-processed device leakage [19][20][21][22].…”

Section: Comparison Of Off-state Leakage Current Variations For Diffementioning

confidence: 99%

The impact of device width on the variability of post-irradiation leakage currents in 90 and 65 nm CMOS technologies

Rezzak

Maillard

Schrimpf

et al. 2012

Microelectronics Reliability

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Mechanical Stress Dependence of Radiation Effects in MOS Structures

Cited by 57 publications

References 19 publications

Geometry and Strain Dependence of the Proton Radiation Behavior of MuGFET Devices

Geometry and Strain Dependence of the Proton Radiation Behavior of MuGFET Devices

Total Ionizing Dose Effects on Strained ${\rm HfO}_{2}$-Based nMOSFETs

The impact of device width on the variability of post-irradiation leakage currents in 90 and 65 nm CMOS technologies

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