Mechanical Strain Dependence of Thermal Transport in Amorphous Silicon Thin Films

Alam, M.; Pulavarthy, Raghu; Muratore, Chris; Haque, M. Shamsul

doi:10.1080/15567265.2014.948233

Cited by 15 publications

(6 citation statements)

References 58 publications

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“…A 8% tensile strain reduced the thermal conductivity of pristine MoS 2 by 35% . However, it was also reported that tensile strain resulted in an increase in the thermal conductivity of amorphous silicon thin films, polymer chains, and silicene. , Therefore, the effect of mechanical strain on the thermal conductivity of MoS 2 needs to be studied in detail, in particular, in the presence of defects, as the work on the combined effect of stain and defects on the thermal conductivity of materials is still lacking.…”

Section: Resultsmentioning

confidence: 99%

Manipulating the Thermal Conductivity of Monolayer MoS₂ via Lattice Defect and Strain Engineering

et al. 2015

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Monolayer molybdenum disulfide (MoS 2 ), a new two-dimensional material beyond graphene, has attracted tremendous attention recently. Its applications in nanoelectronic and thermoelectric devices usually require manipulating the thermal transport properties. Using nonequilibrium molecular dynamics simulations, we investigated the effects of lattice defects and mechanical strain on the thermal conductivity of MoS 2 . We found that the thermal conductivity of monolayer MoS 2 can be effectively tuned by introducing even a small amount of lattice defects. For example, a 0.5% concentration of mono-Mo vacancies is able to reduce the thermal conductivity by about 60%. Remarkably, the thermal conductivity of the defected sample can further be tuned by mechanical strain. For example, a 12% tensile strain is able to reduce the thermal conductivity by another 60%. We also found that the tensile strain exerts almost the same impact on the thermal conductivity of both pristine and defective MoS 2 , which signifies that there is no apparent coupling between defects and strain in affecting the thermal conductivity. Our analyses of the vibrational density of state and spectral energy density show that the underlying mechanisms for these drastic changes are (1) the reduction of the phonon relaxation time arising from phonon−defect scattering and (2) the reduction of the group velocity and heat capacity caused by tensile strain. Our findings here provide important insights and guidelines for the use of monolayer MoS 2 in thermal management and thermoelectric devices.

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Section: Resultsmentioning

confidence: 99%

Manipulating the Thermal Conductivity of Monolayer MoS₂ via Lattice Defect and Strain Engineering

et al. 2015

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“…The studies on strain-dependent thermal conductivity of solids and liquids can be traced back to 1970s and 1980s (Ross, et al, 1984), where strain was usually induced by pressure (compressive stress). The experimental demonstration of utilizing strain to actively control phonon and thermal properties has been applied to many different kinds of material systems (Hsieh, et al, 2009;Hsieh, et al, 2011;Alam, et al, 2015). Theoretical studies have also been performed to understand the origins of strain-dependent thermal conductivity of both bulk crystals (Picu, et al, 2003;Bhowmick and Shenoy, 2006;Li, et al, 2010;Parrish, et al, 2014) and nanostructured materials (Xu and Li, 2009;Xu and Buehler, 2009;Li, et al, 2010).…”

Section: Strain Effectsmentioning

confidence: 99%

Colloquium: Phononic thermal properties of two-dimensional materials

et al. 2018

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Following the emergence of many novel two-dimensional (2-D) materials beyond graphene, interest has grown in exploring implications for fundamental physics and practical applications, ranging from electronics, photonics, phononics, to thermal management and energy storage. In this Colloquium, we first summarize and compare the phonon properties, such as phonon dispersion and relaxation time, of pristine 2-D materials with single layer graphene to understand the role of crystal structure and dimension on thermal conductivity. We then compare the phonon properties, contrasting idealized 2-D crystals, realistic 2-D crystals, and 3-D crystals, and synthesizing this to develop a physical picture of how the sample size of 2-D materials affects their thermal conductivity. The effects of geometry, such as number of layers, and nanoribbon width, together with the presence of defects, mechanical strain, and substrate interactions, on the thermal properties of 2-D materials are discussed. Intercalation affects both the group velocities and phonon relaxation times of layered crystals and thus tunes the thermal conductivity along 2 both the through-plane and basal-plane directions. We conclude with a discussion of the challenges in theoretical and experimental studies of thermal transport in 2-D materials. The rich and special phonon physics in 2-D materials make them promising candidates for exploring novel phenomena such as topological phonon effects and applications such as phononic quantum devices.

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“…In this light, efficient heat dissipation from the III-V materials grown on Si is desirable. In principle, both the presence of threading dislocations [11,12] and the residual thermal stress [13][14][15][16] can affect the thermal conductivity of the epitaxial III-V semiconductors grown on Si, directly impacting the thermal management in devices with multilayered structures. Despite a sparse number of previous studies regarding thermal transport in GaAs based devices [17], there has not been direct experimental evaluation of the effect of the TDD and the residual thermal stress on the thermal conductivity of realistic III-V materials grown on Si for photonic integrated circuit applications.…”

Section: Introductionmentioning

confidence: 99%

Reduced thermal conductivity of epitaxial GaAs on Si due to symmetry-breaking biaxial strain

Vega-Flick

Jung

Yue

et al. 2019

Phys. Rev. Materials

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Epitaxial growth of III-V semiconductors on Si is a promising route for silicon photonics. Threading dislocations and the residual thermal stress generated during growth are expected to affect the thermal conductivity of the III-V semiconductors, which is crucial for efficient heat dissipation from photonic devices built on this platform. In this work, we combine a non-contact laser-induced transient thermal grating technique with ab initio phonon simulations to investigate the in-plane thermal transport of epitaxial GaAs-based buffer layers on Si, employed in the fabrication of III-V quantum dot lasers. Surprisingly, we find a significant reduction of the in-plane thermal conductivity of GaAs, up to 19%, as a result of a small in-plane biaxial stress of ∼250 MPa. Using ab initio phonon calculations, we attribute this effect to the enhancement of phonon-phonon scattering caused by the in-plane biaxial stress, which breaks the cubic crystal symmetry of GaAs. Our results indicate the importance of eliminating the residual thermal stress in the epitaxial III-V layers on Si to avoid the reduction of thermal conductivity and facilitate heat dissipation. Additionally, our results showcase potential means of effectively controlling thermal conductivity of solids with external strain/stress.

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Mechanical Strain Dependence of Thermal Transport in Amorphous Silicon Thin Films

Cited by 15 publications

References 58 publications

Manipulating the Thermal Conductivity of Monolayer MoS₂ via Lattice Defect and Strain Engineering

Manipulating the Thermal Conductivity of Monolayer MoS₂ via Lattice Defect and Strain Engineering

Colloquium: Phononic thermal properties of two-dimensional materials

Reduced thermal conductivity of epitaxial GaAs on Si due to symmetry-breaking biaxial strain

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Mechanical Strain Dependence of Thermal Transport in Amorphous Silicon Thin Films

Cited by 15 publications

References 58 publications

Manipulating the Thermal Conductivity of Monolayer MoS2 via Lattice Defect and Strain Engineering

Manipulating the Thermal Conductivity of Monolayer MoS2 via Lattice Defect and Strain Engineering

Colloquium: Phononic thermal properties of two-dimensional materials

Reduced thermal conductivity of epitaxial GaAs on Si due to symmetry-breaking biaxial strain

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Product

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Manipulating the Thermal Conductivity of Monolayer MoS₂ via Lattice Defect and Strain Engineering

Manipulating the Thermal Conductivity of Monolayer MoS₂ via Lattice Defect and Strain Engineering