As is well-known, the phonon and electron thermal conductivity of a thin film generally decreases as its thickness scales down to nanoscales due to size effects, which have dramatic engineering effects, such as overheating, low reliability, and reduced lifetime of processors and other electronic components. However, given that thinner films 1 have higher surface-to-volume ratios, the predominant surface effects in these nanomaterials enable the transport of thermal energy not only inside their volumes but also along their interfaces. In polar nanofilms, this interfacial transport is driven by surface phonon polaritons, which are electromagnetic waves generated at mid-infrared frequencies mainly by the phonon-photon coupling along their surfaces. Theory predicts that these polaritons can enhance the in-plane thermal conductivity of suspended silica films to values higher than the corresponding bulk one, as their thicknesses decrease through values smaller than 200 nm. In this work, we experimentally demonstrate this thermal conductivity enhancement. The results show that the in-plane thermal conductivity of a 20 nm thick silica film at room temperature is nearly twice its lattice vibration counterpart. Additional thermal diffusivity measurements reveal that the diffusivity of a silica film also increases as its thickness decreases, such that the ratio of thermal conductivity/thermal diffusivity (volumetric heat capacity) remains nearly independent of the film thickness. The experimental results obtained here will enable one to build on recent interesting theoretical predictions, highlight the existence of a new heat channel at the nanoscale, and provide a new avenue to engineer thermally conductive nanomaterials for efficient thermal management.
Studying thermal transport at the nanoscale poses formidable experimental challenges due both to the physics of the measurement process and to the issues of accuracy and reproducibility. The laser-induced transient thermal grating (TTG) technique permits non-contact measurements on nanostructured samples without a need for metal heaters or any other extraneous structures, offering the advantage of inherently high absolute accuracy. We present a review of recent studies of thermal transport in nanoscale silicon membranes using the TTG technique. An overview of the methodology, including an analysis of measurements errors, is followed by a discussion of new findings obtained from measurements on both "solid" and nanopatterned membranes. The most important results have been a direct observation of non-diffusive phononmediated transport at room temperature and measurements of thickness-dependent thermal
We investigate the excitation of coherent acoustic and optical phonons by ultrashort extreme ultraviolet (EUV) pulses produced by a free electron laser. Two crossed femtosecond EUV (wavelength 12.7 nm) pulses are used to excite coherent phonons at a wavelength of 280 nm, which are detected via diffraction of an optical probe beam. Longitudinal and surface acoustic waves are measured in BK-7 glass, diamond, and Bi 4 Ge 3 O 12 ; in the latter material, the excitation of a coherent optical phonon mode is also observed. We discuss probing different acoustic modes in reflection and transmission geometries and frequency mixing of surface and bulk acoustic waves in the signal. The use of extreme ultraviolet radiation will allow the creation of tunable GHz to THz acoustic sources in any material without the need to fabricate transducer structures.
Epitaxial growth of III-V semiconductors on Si is a promising route for silicon photonics. Threading dislocations and the residual thermal stress generated during growth are expected to affect the thermal conductivity of the III-V semiconductors, which is crucial for efficient heat dissipation from photonic devices built on this platform. In this work, we combine a non-contact laser-induced transient thermal grating technique with ab initio phonon simulations to investigate the in-plane thermal transport of epitaxial GaAs-based buffer layers on Si, employed in the fabrication of III-V quantum dot lasers. Surprisingly, we find a significant reduction of the in-plane thermal conductivity of GaAs, up to 19%, as a result of a small in-plane biaxial stress of ∼250 MPa. Using ab initio phonon calculations, we attribute this effect to the enhancement of phonon-phonon scattering caused by the in-plane biaxial stress, which breaks the cubic crystal symmetry of GaAs. Our results indicate the importance of eliminating the residual thermal stress in the epitaxial III-V layers on Si to avoid the reduction of thermal conductivity and facilitate heat dissipation. Additionally, our results showcase potential means of effectively controlling thermal conductivity of solids with external strain/stress.
We report the experimental observation of an increase in the elastic anisotropy of tungsten upon He-ion implantation, probed optically using transient grating spectroscopy. Surface acoustic wave (SAW) velocity measurements were performed on a (110) oriented tungsten single crystal as a function of in-plane propagation direction for unimplanted and implanted samples. Our measurements allow us to finely resolve the remarkably small elastic anisotropy of the samples investigated. SAW velocity calculations are used to interpret the experimental data and to extract the Zener anisotropy parameter η and the elastic constant C44. Upon ion implantation, we observe an increase in the quantity (η−1) by a factor of 2.6. The surprising increase in elastic anisotropy agrees with previous theoretical predictions based on ab initio calculations of the effect of self-interstitial atoms and He-filled vacancy defects on the elastic properties of tungsten.
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