Mechanical removal of SiC by multi-abrasive particles in fixed abrasive polishing using molecular dynamics simulation

Zhou, Piao; Zhu, Ning; Xu, Chengyu; Niu, Fengli; Li, Jun; Zhu, Yongwei

doi:10.1016/j.commatsci.2021.110311

Cited by 39 publications

(11 citation statements)

References 32 publications

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“…Molecular dynamics (MD) simulation is one of the most dependable methods for investigating the material removal mechanism at the nanoscale. [17][18][19][20] On the premise of an accurate modeling, the results will show good agreement with that by experimental method according to the reasonable potential function selection. As an example, Liu et al [21] conducted MD simulations to explore the effect of groove wear on the subsurface damage of monocrystalline silicon during the diamond cutting process, and the expansion of the groove was also studied by considering the temperature and stress distribution on the tool edge.…”

Section: Introductionsupporting

confidence: 55%

Molecular Dynamics Simulation of Nanomachining Mechanism between Monocrystalline and Polycrystalline Silicon Carbide

Liu

Yang

et al. 2021

Advcd Theory and Sims

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As an advanced ceramics material, silicon carbide (SiC) is extensively applied in numerous industries. In this study, molecular dynamics method is used to comparatively investigate the nanomachining mechanism between monocrystalline SiC (mono-SiC) and polycrystalline SiC (poly-SiC) ceramics. Four simulations are performed for the two materials with and without ultrasonic vibration-assisted machining (UVAM). The diamond tool is set as a non-rigid body and vibrated along the depth direction with 100 GHz in frequency and 0.5 nm in amplitude. The effects of material and ultrasonic vibration on the nanomachining mechanism of SiC are analyzed in depth, including the surface generation, subsurface damage, and tool wear. It is determined that the machinability of SiC ceramics can be effectively improved by UVAM. The machining-induced damage extent of poly-SiC is more serious than that of mono-SiC. It is also found that UVAM can effectively reduce the machining-induced damage, decrease the machining resistance, and increase the possibility of ductile removal, but bring about a slightly larger tool wear.

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Section: Introductionsupporting

confidence: 55%

Molecular Dynamics Simulation of Nanomachining Mechanism between Monocrystalline and Polycrystalline Silicon Carbide

Liu

Yang

et al. 2021

Advcd Theory and Sims

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“…The ultra-precision machining technology , is one of the effective methods to achieve non-destructive machining. The ultra-hardness and brittleness of 6H-SiC , and the damage caused by defects such as crystal fracture, crystalline transformation, dislocation slip, and microcracking during reworking − affect the performance of machined parts. The temperature gradient of friction, friction parameters, and parameter changes of residual stresses can affect the surface deformation damage of 6H-SiC to different degrees.…”

Section: Introductionmentioning

confidence: 99%

Molecular Dynamics Analysis of 6H-SiC Subsurface Damage by Nanofriction

Zhang

Feng

et al. 2022

ACS Omega

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To investigate the subsurface damage of 6H-SiC nanofriction, this paper uses molecular dynamics analysis to analyze the loading process of friction 6H-SiC surfaces, thus providing an in-depth analysis of the formation mechanism of subsurface damage from microscopic crystal structure deformation characteristics. This paper constructs a diamond friction 6H-SiC nanomodel, combining the radial distribution function, dislocation extraction method, and diamond identification method with experimental analysis to verify the dislocation evolution process, stress distribution, and crack extension to investigate the subsurface damage mechanism. During the friction process, the kinetic and potential energies as well as the temperature of the 6H-SiC workpiece basically tend to rise, accompanied by the generation of dislocated lumps and cracks on the sides of the 6H-SiC workpiece. The stresses generated by friction during the plastic deformation phase lead to dislocations in the vicinity of the diamond tip friction, and the process of dislocation nucleation expansion is accompanied by energy exchange. Dislocation formation is found to be the basis for crack generation, and cracks and peeled blocks constitute the subsurface damage of 6H-SiC workpieces by diamond identification methods. Friction experiments validate microscopic crystal changes against macroscopic crack generation, which complements the analysis of the damage mechanism of the simulated 6H-sic nanofriction subsurface.

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“…The formation of an SDL mainly comes from the disruption of the FCC lattice in the subsurface layer, and in addition to the conversion of damaged FCC structures into amorphous states, there is a small portion of HCP and BCC structures indicating the dislocation behavior [47]. Meanwhile, the temperature increase at speeds of 50-100 m s -1 promotes the formation of defects, but the speed of 150-200 m s -1 is too fast for defects to form in time, resulting in a reduced subsurface damage layer at the highest considered speed [23]. These results confirm that the abrasive can have an optimum polishing speed that combines the best removal efficiency with the best surface quality.…”

Section: Effect Of Polishing Speedmentioning

confidence: 99%

“…Molecular dynamics (MD) simulations have been proven to be a powerful tool to investigate the material removal mechanism at atomic scale. The effects of polishing speed [14][15][16], polishing depth [17][18][19][20], rotating velocity [21,22], grain size [23,24], normal pressure [25][26][27] and crystal orientation [28] on the surface quality of the work piece have been systematically investigated based on MD simulations. Zhang et al [29] studied the effects of grinding depths and speeds on the subsurface damage layer (SDL).…”

Section: Introductionmentioning

confidence: 99%