Mechanical properties of CoCrCuFeNi multi-principal element alloy thin films on Kapton substrates

Li, C. H.; Dedoncker, Robin; Li, L. W.; Sedghgooya, F.; Zighem, F.; Ji, Vincent; Depla, Diederik; Djémia, Philippe; Faurie, D.

doi:10.1016/j.surfcoat.2020.126474

Cited by 17 publications

(12 citation statements)

References 53 publications

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“…Furthermore, Kapton demonstrates a high adhesion energy, providing a strong bond for excellent adhesion with thin films. 30,39 Fluorescent nitrogen-doped carbon quantum dots (NCQDs) have emerged as a novel class of zero-dimensional (0D) biocompatible materials with outstanding optical and electronic properties. 40 Although NCQDs possess high photogenerated carrier mobility, tunable band gap, and bifunctional electron donor and acceptor capability.…”

Section: ■ Introductionmentioning

confidence: 99%

“…Recently, two-dimensional (2D) layer materials such as molybdenum disulfide (MoS 2 ) have gained a lot of interest in modern device development due to their excellent flexibility, high mechanical strength, tunable band gap, and optical characteristics. − However, it has been discovered that MoS 2 thin films have in-plane mechanical stiffness comparable to steel, making it an intriguing material for various flexible applications. , In this regard, polyimides such as Kapton have garnered considerable attention due to their unique properties, particularly low Young’s moduli. Furthermore, Kapton demonstrates a high adhesion energy, providing a strong bond for excellent adhesion with thin films. , …”

Section: Introductionmentioning

confidence: 99%

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Synergistic Effects of UV Irradiation on a Flexible Ag/NCQDs-MoS₂/Ag/Kapton Resistive-Switching Memory Device

Sharma,

Kumar,

Kaushlendra

et al. 2024

ACS Appl. Electron. Mater.

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Designing multifunctional and unconventional devices can be accomplished by synergistic integration of several external features on a memory device. In the current study, a hybrid structure of nitrogen-doped carbon quantum dots (NCQDs) decorated on molybdenum disulfide (MoS 2 ) has been fabricated over a flexible Kapton substrate. The variable resistive-switching (RS) behavior of the Ag/NCQDs-MoS 2 /Ag-nanostructured device has been thoroughly examined under both dark and UV-light illumination. The device shows an impressive performance, exhibiting gradual resistive-switching (GRS) and abrupt resistiveswitching (ARS) behavior with notable endurance (2200 cycles) and remarkable data retention (2500 s) properties without any deterioration. A conceptual model has been introduced to offer a profound and insightful understanding of the device's ARS and GRS behavior. In ambient conditions, the device ability of bipolar ARS with two resistance states, namely, a high resistance state (HRS) and a low resistance state (LRS), could be attributed to the creation and disruption of an Ag metallic filament between the top and bottom electrodes. However, when the device was subjected to UV irradiation, an interesting ARS as well as GRS behavior with distinct SET and RESET voltages was observed. This behavior could be associated with forming an additional ionic filament before forming an Ag metallic filament. The growth of the ionic filament was influenced by UV irradiation via trapping/detrapping of carriers in generated nitride−sulfide-related vacancies. In addition, the device's flexibility was assessed by subjecting it to various bending degrees and bending cycles to mimic real-life scenarios, where the device may experience multiple forms of mechanical deformation. Therefore, this optically tuned and flexible RS device has the potential to spark the advancement of futuristic resistive random-access memory applications in flexible optoelectronics.

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Section: ■ Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Synergistic Effects of UV Irradiation on a Flexible Ag/NCQDs-MoS₂/Ag/Kapton Resistive-Switching Memory Device

Sharma,

Kumar,

Kaushlendra

et al. 2024

ACS Appl. Electron. Mater.

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“…With the appropriate inputs, the interfacial shear stress, τ IFSS , or the apparent fracture toughness, K app , of a film can be calculated [ 1 , 14 – 23 ]. The τ IFSS indicates the amount of shear stress that an interface can withstand before fracture and the K app is a quantitative way to define a film’s resistance to through thickness crack propagation.…”

Section: Introductionmentioning

confidence: 99%

Parameters influencing the fracture of Mo films and their wider significance

et al. 2023

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Fragmentation testing has been used for decades to assess thin film fracture and delamination. Hooke’s law is generally used to determine a film fracture stress from the crack onset strain observed in micrographs or measured as an electrical resistance increase. While this method is in theory suitable in the elastic regime, it neglects important film characteristics, such as residual stress, microstructure, or film architecture. Thus, there is a need to improve fracture analysis using fragmentation to avoid significant errors in measuring fracture stress or apparent fracture toughness of thin films. In-situ X-ray diffraction fragmentation experiments can measure the film fracture stress even for individual layers being part of a multilayer. Which characteristics influence the apparent fracture behavior will be demonstrated on Mo thin films on polyimide. Graphical abstract

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“…Indeed, when a metal or an oxide is deposited on a flexible substrate, it is subjected to high mechanical stress due to the stretching or curvature of the system and the inorganic/organicinterfacial adhesion [61][62][63][64][65][66][67][68][69][70][71][72][73]. There remain important challenges in this area is especially to understand the phenomena of multi-cracking when applying large strains [74][75][76][77][78][79][80][81] and the related effects on magnetic properties.…”

Section: Introductionmentioning

confidence: 99%

A review on nanostructured thin films on flexible substrates: links between strains and magnetic properties

Zighem

Faurie

2021

J. Phys.: Condens. Matter

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This paper provides a topical review of work on systems based on magnetic nanostructured thin films on polymer substrates. This topic has indeed experienced a significant growth in the last ten years. Several studies show a strong potential of these systems for a number of applications requiring functionalities on non-planar surfaces. However, the deformations necessary for this type of applications are likely to modify their magnetic properties, and the relationships between strain fields, potential damages and functional properties must be well understood. This review focuses both on the development of techniques dedicated to this research, on the synthesis of the experimental results obtained over the last ten years and on the perspectives related to stretchable or flexible magnetoelectric systems. In particular, the article focuses on the links between magnetic behavior and the strain field developing during the whole history of these systems (elaboration, reversible and irreversible loading).

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Mechanical properties of CoCrCuFeNi multi-principal element alloy thin films on Kapton substrates

Cited by 17 publications

References 53 publications

Synergistic Effects of UV Irradiation on a Flexible Ag/NCQDs-MoS₂/Ag/Kapton Resistive-Switching Memory Device

Synergistic Effects of UV Irradiation on a Flexible Ag/NCQDs-MoS₂/Ag/Kapton Resistive-Switching Memory Device

Parameters influencing the fracture of Mo films and their wider significance

A review on nanostructured thin films on flexible substrates: links between strains and magnetic properties

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Mechanical properties of CoCrCuFeNi multi-principal element alloy thin films on Kapton substrates

Cited by 17 publications

References 53 publications

Synergistic Effects of UV Irradiation on a Flexible Ag/NCQDs-MoS2/Ag/Kapton Resistive-Switching Memory Device

Synergistic Effects of UV Irradiation on a Flexible Ag/NCQDs-MoS2/Ag/Kapton Resistive-Switching Memory Device

Parameters influencing the fracture of Mo films and their wider significance

A review on nanostructured thin films on flexible substrates: links between strains and magnetic properties

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Product

Resources

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Synergistic Effects of UV Irradiation on a Flexible Ag/NCQDs-MoS₂/Ag/Kapton Resistive-Switching Memory Device

Synergistic Effects of UV Irradiation on a Flexible Ag/NCQDs-MoS₂/Ag/Kapton Resistive-Switching Memory Device