Mechanical force-displacement transduction structure for performance enhancement of CMOS-MEMS pressure sensor

Cheng, Chao-Lin; Chang, Hsin-Yu; Chang, Chung-Yi; Tuan, Yu-Tsung; Fang, Weileun

doi:10.1109/memsys.2014.6765751

Cited by 8 publications

(5 citation statements)

References 9 publications

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“…Micro-Electro-Mechanical Systems (MEMS) pressure sensors have been widely applied in consumer electronics, automotive systems, environmental monitoring, medical diagnostics, etc. [ 1 ]. According to the sensing principle, MEMS pressure sensors can be divided into three types, including piezoresistive pressure sensors, capacitive pressure sensors and resonant pressure sensors.…”

Section: Introductionmentioning

confidence: 99%

“…Compared with other pressure sensors, the capacitive pressure sensor shows some significant advantages such as high sensitivity, low power, low noise and low temperature drift coefficients [ 2 ]. Recently different types of capacitive pressure sensor were reported [ 1 , 2 , 3 , 4 , 5 ], but these designs don’t integrate any signal processing circuits, resulting in increasing parasitic capacitance and lowering sensor performance.…”

Section: Introductionmentioning

confidence: 99%

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A CMOS Pressure Sensor Tag Chip for Passive Wireless Applications

Deng

et al. 2015

Sensors

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This paper presents a novel monolithic pressure sensor tag for passive wireless applications. The proposed pressure sensor tag is based on an ultra-high frequency RFID system. The pressure sensor element is implemented in the 0.18 µm CMOS process and the membrane gap is formed by sacrificial layer release, resulting in a sensitivity of 1.2 fF/kPa within the range from 0 to 600 kPa. A three-stage rectifier adopts a chain of auxiliary floating rectifier cells to boost the gate voltage of the switching transistors, resulting in a power conversion efficiency of 53% at the low input power of −20 dBm. The capacitive sensor interface, using phase-locked loop archietcture, employs fully-digital blocks, which results in a 7.4 bits resolution and 0.8 µW power dissipation at 0.8 V supply voltage. The proposed passive wireless pressure sensor tag costs a total 3.2 µW power dissipation.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A CMOS Pressure Sensor Tag Chip for Passive Wireless Applications

Deng

et al. 2015

Sensors

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“…However, limited designs are available for CMOS MEMS devices due to the fixed layers provided by the standard process. The concept of integrating a rigid electrode with a flexible mechanical structure for capacitive microsensors has been reported in [12][13][14]. The rigid sensing electrode and flexible diaphragm are linked by a mechanical support to form the force-displacement transduction structure.…”

Section: Introductionmentioning

confidence: 99%

“…This study exploits the concept in [14] to design a CMOS MEMS capacitive pressure sensor with a movable sensing electrode attached to a deformable diaphragm, as shown in figure 1(a). The sensitivity of the CMOS MEMS pressure sensor can be improved by the proposed parallel-plate gap-closing sensing electrodes.…”

Section: Introductionmentioning

confidence: 99%

Development of a CMOS MEMS pressure sensor with a mechanical force-displacement transduction structure

Cheng

Chang

et al. 2015

J. Micromech. Microeng.

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This study presents a capacitive pressure sensor with a mechanical force-displacement transduction structure based on the commercially available standard CMOS process (the TSMC 0.18 μm 1P6M CMOS process). The pressure sensor has a deformable diaphragm to support a movable plate with an embedded sensing electrode. As the diaphragm is deformed by the ambient pressure, the movable plate and its embedded sensing electrode are displaced. Thus, the pressure is detected from the capacitance change between the movable and fixed electrodes. The undeformed movable electrode will increase the effective sensing area between the sensing electrodes, thereby improving the sensitivity. Experimental results show that the proposed pressure sensor with a force-displacement transducer will increase the sensitivity by 126% within the 20 kPa–300 kPa absolute pressure range. Moreover, this study extends the design to add pillars inside the pressure sensor to further increase its sensing area as well as sensitivity. A sensitivity improvement of 117% is also demonstrated for a pressure sensor with an enlarged sensing electrode (the overlap area is increased two fold).

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“…Micro-electro-mechanical systems (MEMS) pressure sensors have been widely applied in consumer electronics, automotive systems, environmental monitoring, industrial control, etc [1]. According to the sensing principle, MEMS pressure sensors can be mainly divided into three types: piezoresistive pressure sensors, capacitive pressure sensors and resonant pressure sensors.…”

Section: Introductionmentioning

confidence: 99%

A CMOS pressure sensor with integrated interface for passive RFID applications

Deng

et al. 2014

Meas. Sci. Technol.

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This paper presents a CMOS pressure sensor with integrated interface for passive RFID sensing applications. The pressure sensor consists of three parts: top electrode, dielectric layer and bottom electrode. The dielectric layer consists of silicon oxide and an air gap. The bottom electrode is made of polysilicon. The gap is formed by sacrificial layer release and the Al vapor process is used to seal the gap and form the top electrode. The sensor interface is based on phase-locked architecture, which allows the use of fully digital blocks. The proposed pressure sensor and interface is fabricated in a 0.18 μm CMOS process. The measurement results show the pressure sensor achieves excellent linearity with a sensitivity of 1.2 fF kPa−1. The sensor interface consumes only 1.1 µW of power at 0.5 V voltage supply, which is at least an order of magnitude better than state-of-the-art designs.

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Mechanical force-displacement transduction structure for performance enhancement of CMOS-MEMS pressure sensor

Cited by 8 publications

References 9 publications

A CMOS Pressure Sensor Tag Chip for Passive Wireless Applications

A CMOS Pressure Sensor Tag Chip for Passive Wireless Applications

Development of a CMOS MEMS pressure sensor with a mechanical force-displacement transduction structure

A CMOS pressure sensor with integrated interface for passive RFID applications

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