Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique

Abstract

The mechanical properties of high-quality suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique are characterized. Micro-Raman scattering is used to study the stress distribution in the GaN microstructures, and the measured results show that the stress in GaN microbeams decreases 47% when the silicon underneath the microbeams is removed. Microbeam bending test is used to measure the Young's modulus of GaN films grown on silicon ͑111͒ substrate, yielding a Young's modulus of 330 GPa.

Cathodoluminescence Study of InGaN/GaN Quantum-Well LED Structures Grown on a Si Substrate

“…[1][2][3][4] Recently, some authors of this paper (HKUST group) developed a novel approach combining the growth of high-quality GaN on patterned silicon and wet etching technology to shape the GaN. 5,6 Using this technique 2 lm crack-free n-GaN layers and LEDs were grown on patterned silicon substrate assisted with HT-AlN nucleation layer, SiNx, and LT-AlN interlayers. Spatially resolved cathodoluminescence (CL) is a very useful method to characterize the quality of a GaN epilayer.…”

Design of free-standing GaN strip waveguide and grating couplers

“…So they can be used to form active device, LD or LED. Among these materials, GaN based devices is more promising for optoelectronics, for it has wide transparent wavelength range (from visible to the far-infrared), high refractive index, the advantages in mechanical and chemical properties, such as large elastic modulus, high piezoelectric, and piezoresistive coefficients, as well as chemical inertness [1][2][3][4][5]. The unique properties of III-nitrides may allow the creation of photonic integrated circuits (PICs) with unprecedented properties and functions.…”

“…Sameshima et al [9,10] fabricated a flat GaN/HfO 2 membrane by removing Si substrate with DRIE or XeF 2 gas isotropical etching, and achieved free-standing GaN gratings with comb-drive actuator. Yang et al [5,11] get suspended GaN microstructures fabricated by the GaN-on-patterned-silicon technique. Wang et al [12,13] developed original free-standing circular GaN gratings using backside release of silicon substrate, continue etching of buffer layer and GaN layer.…”

Monolithic micro-fabrication of Si micro-electro-mechanical structure with GaN light emitting diode

“…It was also shown that Si substrate was used to grow the GaN-based semiconductor (Egawa et al 2002;Dadgar et al 2001). Recently, the micro-electro-mechanical structures of GaN semiconductor were studied (King et al 2004;Cimalla et al 2007;Duboz et al 2001;Yang et al 2006). The threedimensional GaN structures were fabricated and the sensors using the GaN transistor were proposed.…”