Mechanical characterization of low-k and barrier dielectric thin films

Cherault, N.; Carlotti, G.; Casanova, N.; Gergaud, P.; Goldberg, C.; Thomas, O.; Verdier, M.

doi:10.1016/j.mee.2005.07.018

Cited by 30 publications

(14 citation statements)

References 14 publications

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“…Much effort has been expended in measuring the mechanical properties of low-k dielectric films and determining the mechanical stresses they experience in use [26,27]. Elastic modulus/hardness [28][29][30] and coefficient of thermal expansion (CTE) [30][31][32][33] have been the most popular mechanical material properties measured to date. These studies have shown that the increased incorporation of hydrogen and terminal methyl groups into these films results in the reduction of load bearing network bonds leading to reduced hardness and elastic modulus values [14].…”

Section: Introductionmentioning

confidence: 99%

Fourier transform infrared spectroscopy investigation of chemical bonding in low-k a-SiC:H thin films

King

French

Bielefeld

et al. 2011

Journal of Non-Crystalline Solids

100

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Section: Introductionmentioning

confidence: 99%

Fourier transform infrared spectroscopy investigation of chemical bonding in low-k a-SiC:H thin films

King

French

Bielefeld

et al. 2011

Journal of Non-Crystalline Solids

100

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“…In addition, the nanoindentation results only up to a penetration depth of h ≤ t f /10 were considered in all analyses, where t f was the thickness of the hybrid plasma-polymer film on the Si substrate. 15 16 …”

Section: Methodsmentioning

confidence: 99%

A Low Dielectric Study on Hybrid Plasma-Polymer Thin Films of Different Ratio Between Toluene and TEOS

Cho

Jung²,

Jh³

2011

j nanosci nanotechnol

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Organic-inorganic hybrid co-polymer thin films were deposited on silicon(100) substrates under the several ratio of TEOS (tetraethoxysilane) against toluene by plasma enhanced chemical vapour deposition (PECVD) method. Toluene and TEOS were utilized as organic and inorganic precursors each, and hydrogen and argon were also used as a bubbler and carrier gases, respectively. In order to compare the difference of the electrical and the mechanical properties of the plasma polymerized thin films, we grew the hybrid co-polymer thin films under the conditions of various ratio between toluene and TEOS with fixed RF (radio frequency using 13.56 MHz) powers at 30 W. The as-grown polymerized thin films were in first analyzed by FT-IR and XPS. The result of FT-IR showed that the co-polymer thin films were polymerized with fragmented each precursor. Also, XPS results showed the chemical species and binding energies of each species. Si 2p core-level spectra from the hybrid polymer thin film showed the status of Si oxidation number. Impedance analyzer was utilized for the measurements of I-V curves and capacitance values. Also, the thin films were analyzed for hardness and Young's modulus by nano-indenter.

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“…6,7 In addition, these films, which built up the metal-insulator ͑hybrid plasma-polymer thin films͒-silicon-metal structure, were investigated by a multifrequency precision LCR meter ͑HP 4284b͒ for capacitance with 1 MHz of frequency and by a semiconductor parameter analyzer ͑HP 4145B͒ for I-V curves with 1 MV/ cm of field. We used double-side-polished Si͑100͒ substrate for transmittance-mode IR analysis.…”

Section: Methodsmentioning

confidence: 99%

Study on the characteristics of toluene-tetraethoxysilane hybrid plasma-polymer thin films

Cho

Bae

Lee

et al. 2009

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Characterization of low-temperature silicon nitride films produced by inductively coupled plasma chemical vapor deposition J.Characterization of low dielectric constant plasma polymer films deposited by plasma-enhanced chemical vapor deposition using decamethyl-cyclopentasiloxane and cyclohexane as the precursors J. Vac. Sci. Technol. A 24, 165 (2006); 10.1116/1.2148414 Structure and mechanical properties of thin films deposited from 1,3,5-trimethyl-1,3,5-trivinylcyclotrisiloxane and waterThis study investigated the interaction of varied plasma power with ultralow-k toluene-tetraethoxysilane ͑TEOS͒ hybrid plasma-polymer thin films, as well as changing electrical and mechanical properties with varied radio frequency ͑rf 13.56 MHz͒ power of plasma. The hybrid films with low dielectric constants were deposited on silicon͑100͒ substrates by plasma enhanced chemical vapor deposition system. Toluene and tetraethoxysilane were utilized as organic and inorganic precursors. In addition, bubbling ratio of TEOS to toluene is 1:10. The as-grown hybrid plasma-polymer thin films were characterized by Fourier transform infrared spectroscopy, atomic force microscopy ͑AFM͒, nanoindentation, I-V curves, and capacitance. To analyze their trends of electrical and mechanical properties, the thin films were grown under conditions of various rf powers. The IR spectra showed them to have completely different chemical functionalities from the liquid toluene and TEOS precursors. The AFM images showed changing of surface roughness that depended on different deposition rf powers. An MTS nanoindenter ® was used to measure the hardness and Young's modulus that increased as-deposition rf power increased, with the highest values being 2.69 and 27.6 GPa at 50 W of deposition rf power. An impedance analyzer was utilized for measurements of the I-V curves ͑for leakage current density; 1 ϫ 10 −9 A / cm 2 at 1 MV/ cm͒ and capacitance ͑for dielectric constant; 1.69͒.

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Mechanical characterization of low-k and barrier dielectric thin films

Cited by 30 publications

References 14 publications

Fourier transform infrared spectroscopy investigation of chemical bonding in low-k a-SiC:H thin films

Fourier transform infrared spectroscopy investigation of chemical bonding in low-k a-SiC:H thin films

A Low Dielectric Study on Hybrid Plasma-Polymer Thin Films of Different Ratio Between Toluene and TEOS

Study on the characteristics of toluene-tetraethoxysilane hybrid plasma-polymer thin films

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