Mechanical and electronic properties of graphene nanomesh heterojunctions

Ji, Zhang; Zhang, Weixiang; Ragab, Tarek; Basaran, Cemal

doi:10.1016/j.commatsci.2018.06.026

Cited by 20 publications

(12 citation statements)

References 73 publications

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“…For the Lennard-Jones (LJ) potential, σCC was 3.0, and thus, the cutoff distance was 10.2 Å, thus the initial distance between the graphene nanoflake and the diamond substrate is within the LJ cutoff distance. Having these cutoff distances, the strength of graphene matched the experimental results [37] and has been validated in a number of previous studies [5,7,38,39,40,41]. The interfacial friction coefficient of the graphene nanoflake–diamond substrate was calculated as the ratio between the friction force and the normal force that is applied on graphene.…”

Section: Molecular Dynamics Simulation Detailssupporting

confidence: 61%

“…The definition of each term that appears in Equation (1) can be found in Zhang et al [7]. The upper and the lower bounds of the cutoff distance was set to 1.9 Å.…”

Section: Molecular Dynamics Simulation Detailsmentioning

confidence: 99%

“…Graphene has received considerable attention during the last decade, and it is considered as a suitable material for the nanoscale electronic devices mainly because of its excellent mechanical, thermal, and electronic properties [1,2,3,4,5]. However, performance of electronic devices is significantly affected by the electrical, thermal, and mechanical properties of the device substrate [6,7]. Diamond, which is a metastable allotrope of carbon, has the potential to be used as substrate without diminishing device functions [8].…”

Section: Introductionmentioning

confidence: 99%

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Anisotropy of Graphene Nanoflake Diamond Interface Frictional Properties

Osloub

Siddiqui

et al. 2019

Materials

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Using molecular dynamics (MD) simulations, the frictional properties of the interface between graphene nanoflake and single crystalline diamond substrate have been investigated. The equilibrium distance between the graphene nanoflake and the diamond substrate has been evaluated at different temperatures. This study considered the effects of temperature and relative sliding angle between graphene and diamond. The equilibrium distance between graphene and the diamond substrate was between 3.34 Å at 0 K and 3.42 Å at 600 K, and it was close to the interlayer distance of graphite which was 3.35 Å. The friction force between graphene nanoflakes and the diamond substrate exhibited periodic stick-slip motion which is similar to the friction force within a graphene–Au interface. The friction coefficient of the graphene–single crystalline diamond interface was between 0.0042 and 0.0244, depending on the sliding direction and the temperature. Generally, the friction coefficient was lowest when a graphene flake was sliding along its armchair direction and the highest when it was sliding along its zigzag direction. The friction coefficient increased by up to 20% when the temperature rose from 300 K to 600 K, hence a contribution from temperature cannot be neglected. The findings in this study validate the super-lubricity between graphene and diamond and will shed light on understanding the mechanical behavior of graphene nanodevices when using single crystalline diamond as the substrate.

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Section: Molecular Dynamics Simulation Detailssupporting

confidence: 61%

“…The definition of each term that appears in Equation (1) can be found in Zhang et al [7]. The upper and the lower bounds of the cutoff distance was set to 1.9 Å.…”

Section: Molecular Dynamics Simulation Detailsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Anisotropy of Graphene Nanoflake Diamond Interface Frictional Properties

Osloub

Siddiqui

et al. 2019

Materials

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“… Homogeneous junctions ( A | A ) 1. Structure: interface, width, nanohole and thickness aGNR|zGNR M/S [ 41 ] (m)aGNR|(n)aGNR Semi-M/S [ 43 ] Black–blue phosphorene S/S types I, II [ 46 ] (m)GeP 3 |(n)GeP 3 S/S type II [ 47 ] GNM/graphene S/Semi-M [ 55 ] Monolayer–multilayer MoS 2 S/S type I [ 56 ] Multilayer MoSe 2 S/S type II [ 151 ] 2. Doping and passivation: substituting doping, surface adsorption, monohydrogenated, dihydrogenated n -doped/ p -doped GNR S/S type III [ 63 ] n -doped GNR/GNR ( n -doped GNR) S/S type II [ 131 ] H 2 -doped (m)zGNR–H M/S [ 75 ] O/zGNR–H/zGNR M/S [ 80 ] H 2 –(m)zGNR–H/H–(n)zGNR–H M/S [ 82 ] zMoS 2 NR–H/zMoS 2 NR M/S [ …”

Section: The Properties Of Lhssmentioning

confidence: 99%

Recent Advances in 2D Lateral Heterostructures

et al. 2019

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HIGHLIGHTS• The tunable mechanisms of lateral heterostructures on both homogeneous junctions and heterogeneous junctions are summarized.• Electronic and photoelectronic devices with lateral heterostructures have been discussed.• Different types of contacts of 2D lateral heterostructures are classified. • Recent developments in synthesis and nanofabrication technologies of 2D lateral heterostructures are reviewed. ABSTRACT Recent developments in synthesis and nanofabrication technologies offer the tantalizing prospect of realizing various applications from twodimensional (2D) materials. A revolutionary development is to flexibly construct many different kinds of heterostructures with a diversity of 2D materials. These 2D heterostructures play an important role in semiconductor and condensed matter physics studies and are promising candidates for new device designs in the fields of integrated circuits and quantum sciences. Theoretical and experimental studies have focused on both vertical and lateral 2D heterostructures; the lateral heterostructures are considered to be easier for planner integration and exhibit unique electronic and photoelectronic properties. In this review, we give a summary of the properties of lateral heterostructures with homogeneous junction and heterogeneous junction, where the homogeneous junctions have the same host materials and the heterogeneous junctions are combined with different materials. Afterward, we discuss the applications and experimental synthesis of lateral 2D heterostructures. Moreover, a perspective on lateral 2D heterostructures is given at the end.

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“…There are HG with round, triangular, and rectangular holes [ 16 , 17 , 18 , 19 , 20 ]. Most often, in a real experiment, HG with round holes are synthesized.…”

Section: Introductionmentioning

confidence: 99%

Holey Graphene: Topological Control of Electronic Properties and Electric Conductivity

Barkov

Glukhova

2021

Nanomaterials

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This paper studies holey graphene with various neck widths (the smallest distance between two neighbor holes). For the considered structures, the energy gap, the Fermi level, the density of electronic states, and the distribution of the local density of electronic states (LDOS) were found. The electroconductive properties of holey graphene with round holes were calculated depending on the neck width. It was found that, depending on the neck width, holey graphene demonstrated a semiconductor type of conductivity with an energy gap varying in the range of 0.01–0.37 eV. It was also shown that by changing the neck width, it is possible to control the electrical conductivity of holey graphene. The anisotropy of holey graphene electrical conductivity was observed depending on the direction of the current transfer.

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Mechanical and electronic properties of graphene nanomesh heterojunctions

Cited by 20 publications

References 73 publications

Anisotropy of Graphene Nanoflake Diamond Interface Frictional Properties

Anisotropy of Graphene Nanoflake Diamond Interface Frictional Properties

Recent Advances in 2D Lateral Heterostructures

Holey Graphene: Topological Control of Electronic Properties and Electric Conductivity

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