Recent Advances in 2D Lateral Heterostructures

Wang, Jianwei; Li, Zhiqiang; Chen, Haiyuan; Deng, Guangwei; Niu, Xiaobin

doi:10.1007/s40820-019-0276-y

Cited by 135 publications

(119 citation statements)

References 157 publications

(252 reference statements)

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“…CVD is an important synthesis method to prepare high quality 2D materials with scalable size, controllable thickness, and perfect crystal structure for both fundamental research and practical applications [101][102][103][104]. To date, various materials with controllable layer number, lateral size, and microstructure have been successfully prepared via CVD methods, such as graphene, TMDC, Xene, boron nitride, and MXene.…”

Section: Chemical Vapor Depositionmentioning

confidence: 99%

Two-Dimensional Platinum Diselenide: Synthesis, Emerging Applications, and Future Challenges

et al. 2020

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HIGHLIGHTS • A comprehensive review of the recent development of two-dimensional (2D) PtSe 2 synthesis strategies has been extensively surveyed. • The applications of 2D PtSe 2 materials in areas, including opto/electric devices, photocatalysis, hydrogen evolution reaction, and sensors, have been reviewed. • Current challenges in the development of 2D PtSe 2 materials are identified, and outlooks toward unexplored research areas are suggested.

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Section: Chemical Vapor Depositionmentioning

confidence: 99%

Two-Dimensional Platinum Diselenide: Synthesis, Emerging Applications, and Future Challenges

et al. 2020

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“…[ 37 ] Progress in engineering, for example, to tailor nanoribbons and lateral superlattices, and use such effects as negative differential resistance, can be anticipated. [ 35–38 ] Recently, multilayers of germanene, stanene, and antimonene have been grown directly on semiconducting molybdenum disulfides; [ 39 ] indeed, an exciting prospect would be the lateral growth of heterostructures between them.…”

Section: Resultsmentioning

confidence: 99%

Continuous Growth of Germanene and Stanene Lateral Heterostructures

Ogikubo

Shimazu

Fujii

et al. 2020

Adv Materials Inter

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of a band gap in its electronic structure is difficult, these novel 2D materials are expected to possess sizeable band gaps, making them typically suitable for electronic applications. Furthermore, theory predicts that they are robust topological insulators, even up to about room temperature (RT) and above for germanene and stanene.In experiment, these artificial 2D materials were firstly realized in situ by molecular beam epitaxy (MBE) for silicene in 2012, [1,2] germanene in 2014, [3] stanene in 2015, [4] and finally plumbene in 2019. [5] One of the next targets is the growth of in-plane heterostructures because abrupt lateral interfaces promise controlled heterojunction functionalities. Lateral heterostructures of graphene and hexagonal boron nitride (h-BN) were grown on Cu(110) in 2014. [6] First-principles calculations on the electronic properties of graphene quantum dots embedded in monolayer h-BN sheets typically indicate that the h-BN band gap shrinks upon increasing the diameter of the graphene dots. [7] Besides lateral graphene/h-BN heterostructures, fabrication of several in-plane heterostructures of transition metal dichalcogenides has also been reported. [8] Very recently, vertical heterostructures have been prepared by boron intercalation underneath Group 14 elemental post-graphene materials receive much attention because of their outstanding properties, typically, as robust 2D topological insulators. Their heterostructures are a main target in view of disruptive applications. Here, the realization of striking in-plane lateral heterostructures between germanene and stanene are shown, which are sustainable 2D Ge-and Snbased graphene analogs, but with a strong intrinsic spin-orbit coupling. A unique combination of atomic segregation epitaxy (ASE) and molecular beam epitaxy (MBE) for the in situ continuous fabrication of nearly atomically precise lateral multijunction heterostructures, respectively, consisting of atom-thin germanene and stanene on a Ag(111) thin film is used. Scanning tunneling microscopy (STM) observations at atomic scale and low-energy electron diffraction testify that germanene and stanene sheets without intermixing are prepared simultaneously on the same terraces at wide scale: tin and germanium atoms neither exchange their sites nor adsorb on the germanene and stanene sheets. The atomic structure of the boundary between germanene and stanene is derived from STM images, while scanning tunneling spectroscopy reveals key electronic features at the heterojunction. This innovative synergetic approach of ASE and MBE growths offers great flexibility for the realization of unprecedented lateral 2D heterostructures.

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“…Building nano-devices, based on vertical or lateral heterojunctions made of two-dimensional materials (2DM), is gaining increasing interest for electronics and photonics applications [ 1 , 2 , 3 ]. The production of these van der Waals heterostructures requires either transferring or the direct growth of individual 2DM layers, one on another or one besides the other [ 4 , 5 ]. The procedures developed to obtain ever more complex stacks need to be carefully planned, controlled, and verified step by step.…”

Section: Introductionmentioning

confidence: 99%

Scanning Probe Spectroscopy of WS2/Graphene Van Der Waals Heterostructures

et al. 2020

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In this paper, we present a study of tungsten disulfide (WS2) two-dimensional (2D) crystals, grown on epitaxial Graphene. In particular, we have employed scanning electron microscopy (SEM) and µRaman spectroscopy combined with multifunctional scanning probe microscopy (SPM), operating in peak force–quantitative nano mechanical (PF-QNM), ultrasonic force microscopy (UFM) and electrostatic force microscopy (EFM) modes. This comparative approach provides a wealth of useful complementary information and allows one to cross-analyze on the nanoscale the morphological, mechanical, and electrostatic properties of the 2D heterostructures analyzed. Herein, we show that PF-QNM can accurately map surface properties, such as morphology and adhesion, and that UFM is exceptionally sensitive to a broader range of elastic properties, helping to uncover subsurface features located at the buried interfaces. All these data can be correlated with the local electrostatic properties obtained via EFM mapping of the surface potential, through the cantilever response at the first harmonic, and the dielectric permittivity, through the cantilever response at the second harmonic. In conclusion, we show that combining multi-parametric SPM with SEM and µRaman spectroscopy helps to identify single features of the WS2/Graphene/SiC heterostructures analyzed, demonstrating that this is a powerful tool-set for the investigation of 2D materials stacks, a building block for new advanced nano-devices.

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Recent Advances in 2D Lateral Heterostructures

Cited by 135 publications

References 157 publications

Two-Dimensional Platinum Diselenide: Synthesis, Emerging Applications, and Future Challenges

Two-Dimensional Platinum Diselenide: Synthesis, Emerging Applications, and Future Challenges

Continuous Growth of Germanene and Stanene Lateral Heterostructures

Scanning Probe Spectroscopy of WS2/Graphene Van Der Waals Heterostructures

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