Mechanical Alloying of BiTe and BiSbTe Thermoelectric Materials

Hasezaki, Kazuhiro; Nishimura, Moritatsu; Umata, M.; Tsukuda, Hiroshi; Araoka, Mamoru

doi:10.2320/matertrans1989.35.428

Cited by 52 publications

(36 citation statements)

References 5 publications

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“…Powder metallurgical processes such as mechanical alloying (MA) have been used in the study of Bi 2 Te 3 -based compounds, which has been adopted to obtain homogeneous materials with fine grain sizes. 1,2) The fine grain size materials had lower thermal conductivities than single crystals of the same materials because phonons can be scattered at grain boundaries. In the Bi-Te based alloys, however, detailed research of the thermal conductivity dependence on grain size is still limited.…”

Section: Introductionmentioning

confidence: 99%

Retraction:Fine Measurement of Thermal Conductivity for (Bi0.5Sb1.5)Te3 Compounds

2009

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A fine measurement system was constructed for thermal conductivity based on the static comparison method. The thermal conductivity of the sample was 1.397 W/mK. The system has an accuracy of less than 1% for 1.411 W/mK of the reference quartz. The (Bi 0:5 Sb 1:5 )Te 3 samples were prepared by mechanical alloying followed by hot pressing. Grain sizes were controlled in a range from 1 to 10 mm by controlling the sintering temperature in a range from 623 to 773 K. The thermal conductivity was 0.89 W/mK for the sample sintered at 623 K, where the grain size of 1.75 mm was measured by scanning electron microscopy (SEM). The thermal conductivity increased on the sample sintered at 673 K because of grain growth and decreased on those sintered at the temperatures from 673 to 773 K because the increase of pore size caused to decrease thermal conductivity. The increase of thermal conductivity for the samples sintered at temperatures above 773 K was affected by the increase of carrier concentration.

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Section: Introductionmentioning

confidence: 99%

Retraction:Fine Measurement of Thermal Conductivity for (Bi0.5Sb1.5)Te3 Compounds

2009

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“…This is because the conductivity of the phonon component was reduced as a result of the ne grain size obtained by MA 18) . Furthermore, the thermal conductivity of the carrier component is proportional to the electrical conductivity, and follows the Wiedemann-Franz law, so the slightly higher thermal conductivities of materials with additional dopants compared with that of Bi 2 Te 2.67 Se 0.33 is consistent with the electrical conductivity results in Fig.…”

Section: Resultsmentioning

confidence: 97%

Constituent Element Addition to n-Type Bi2Te2.67Se0.33 Thermoelectric Semiconductor without Harmful Dopants by Mechanical Alloying

et al. 2016

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“…(2): (2) where L and T are the Lorenz number and the temperature, respectively. To obtain a low phonon component, samples are usually prepared by a powder metallurgy process such as mechanical alloying (MA) [2,3].…”

Section: Introductionmentioning

confidence: 99%

Recrystallization of Bi88Sb12 thermoelectric semiconductors processed by High Pressure Torsion

Sumida

Ashida

Hasezaki

et al. 2011

Trans. Mat. Res. Soc. Japan

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Bi 88 Sb 12 was prepared by mechanical grinding (MG) fo llowed by hot pressing. The disks were cut and then deformed using high pressure torsion (HPT) at 373 K under a pressure of 6.0 GPa. The number of turns in the HPT process was either one or five. Metallurgical and structural characterizations were performed using scanning electron microscopy, differential thermal analysis, X -ray diffraction, and Vickers microhardness measurements. The thermoelectric properties were estimated by measuring the thermal and electrical conductivities, and the Hall and Seebeck coefficients. The HPT samples prepared using one turn were homogeneous and finely grained; those prepared using five turns were coarse grained. The results indicated that grain growth occurred after HPT deformation, which was consistent with the microhardness results. The thermal conductivity of the as -sintered MG sample was 2.83 W m −1 K −1 at room temperature, which was lower than values previously reported for samples prepared by mechanical alloying (MA). The power factors of the HPT samples were almost the same as that of the as-sintered MG sample.

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Mechanical Alloying of BiTe and BiSbTe Thermoelectric Materials

Cited by 52 publications

References 5 publications

Retraction:Fine Measurement of Thermal Conductivity for (Bi<SUB>0.5</SUB>Sb<SUB>1.5</SUB>)Te<SUB>3</SUB> Compounds

Retraction:Fine Measurement of Thermal Conductivity for (Bi<SUB>0.5</SUB>Sb<SUB>1.5</SUB>)Te<SUB>3</SUB> Compounds

Constituent Element Addition to <i>n</i>-Type Bi<sub>2</sub>Te<sub>2.67</sub>Se<sub>0.33</sub> Thermoelectric Semiconductor without Harmful Dopants by Mechanical Alloying

Recrystallization of Bi<sub>88</sub>Sb<sub>12</sub> thermoelectric semiconductors processed by High Pressure Torsion

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