Retraction:Fine Measurement of Thermal Conductivity for (Bi&lt;SUB&gt;0.5&lt;/SUB&gt;Sb&lt;SUB&gt;1.5&lt;/SUB&gt;)Te&lt;SUB&gt;3&lt;/SUB&gt; Compounds

Hamachiyo, Takashi; Ashida, Maki; Hasezaki, Kazuhiro

doi:10.2320/matertrans.mra2008241

Cited by 10 publications

(7 citation statements)

References 8 publications

(6 reference statements)

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“…The electrical conductivities were measured by the van der Pauw method under vacuum over a temperature range of 300-573 K. The thermal conductivities of the mechanically ground materials were measured using the self-constructed instrument of static comparison method at room temperature. 13) Thermoelectric performances were evaluated using the dimensionless thermoelectric figure of merit ZT, where ZT ¼ 2 T À1 .…”

Section: Methodsmentioning

confidence: 99%

Preparation of Single-Phase ZnSb Thermoelectric Materials Using a Mechanical Grinding Process

2010

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Single-phase zinc antimonide (ZnSb) was prepared using a mechanical grinding (MG) process. The ZnSb source ingots were prepared by direct melting of the constituent elements. Two processes were used to prepare the ingots. One of the processes involved quenching the molten material in water in an evacuated quartz ampoule. In the other process, an additional step consisting of heating for 100 h at 723 K was performed after quenching. The ground materials were obtained by mechanically grinding the resultant ingots and then hot-pressing at 673 K. The materials were characterized by X-ray diffraction (XRD), differential thermal analysis (DTA), and thermoelectric property measurements. The results indicated that the materials were crack free and single phase. The thermal conductivity of the ground materials was 1.41 Wm À1 K À1 at room temperature. This value was lower than that reported in the available data for materials prepared by conventional melt growth and powder metallurgy methods. The ZnSb single phase was found to have a dimensionless figure of merit of 0.6-0.8 at 573 K.

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Section: Methodsmentioning

confidence: 99%

Preparation of Single-Phase ZnSb Thermoelectric Materials Using a Mechanical Grinding Process

2010

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“…The electrical conductivity ' and the carrier concentration of the sintered materials was measured by the van der Pauw method under vacuum using a direct current of 50 mA and a magnetic field of 0.5 T in a temperature range from 300-573 K. The thermal conductivity was measured using the constructed static comparison method at room temperature. 15) Thermoelectric performance was evaluated by the power factor 2 ' and the dimensionless thermoelectric figure of merit ZT given by ZT ¼ 2 'T= , where T is absolute temperature.…”

Section: Methodsmentioning

confidence: 99%

Preparation of Single Phase β-Zn4Sb3 Thermoelectric Materials by Mechanical Grinding Process

2010

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Single phase -Zn 4 Sb 3 was prepared by mechanical grinding (MG). Source materials for the Zn 4 Sb 3 ingots were prepared using three different processes after the direct melting of constituent elements. The ingot was obtained by quenching the melt in water within an evacuated quartz ampoule and heat-treated for a total of 200 h in two stages at 723 K and 673 K. The resultant ingots were mechanically ground and sintered at 623 K by hot pressing. The sintered materials were obtained crack-free single phase -Zn 4 Sb 3 and characterized by X-ray diffraction, differential thermal analysis (DTA) and thermoelectric property measurements. The thermal conductivity of the sintered materials was 0.88 Wm À1 K À1 at room temperature and this was slightly lower than that reported for the materials prepared by a conventional method. Results indicate that the -Zn 4 Sb 3 single phase of the dimensionless figure of merit ranged from 1.06-1.31 at 573 K.

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“…19) These samples, which are composed of fine grains, are expected to have low phonon thermal conductivity leading to an enhanced figure of merit in the resultant thermoelectric materials. If Bi 2 Te 3 compounds have the preferred orientation, the experimental results must be analyzed with the complicated band model and the carrier concentration must be taken into account the anisotropic parameters such as Hall tensor and resistivity tensor 5) instead of eq.…”

Section: Resultsmentioning

confidence: 99%

Thermoelectric Properties of Bi2Te3-Related Materials Finely Grained by Mechanical Alloying and High Pressure Torsion

et al. 2009

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Bi 2 Te 3 -related thermoelectric semiconductors were prepared by the mechanical alloying (MA) and the vertical Bridgman (VBM)-High Pressure Torsion (HPT) methods. Structures and electric properties of these alloys were then investigated. These samples had a nominal composition of Bi 0:5 Sb 1:5 Te 3:0 with 0.07 mass% excess Te. The MA sample was sintered into a compact after mechanical alloying while the VBM-HPT sample was deformed by HPT after being cut into a disk from a melt-grown ingot by the vertical Bridgman method (VBM). The orientation factors of the MA and VBM-HPT samples were 0.054 and 0.525, respectively, indicating that the preferred orientation was formed by VBM-HPT. Average grain sizes of both samples were approximately 2 mm. The VBM-HPT sample was shown low electrical conductivity than the MA one in spite of the high orientation factor.By estimating the slope of carrier mobility versus temperature the carrier scattering factor of the MA and VBM-HPT samples were estimated to be À1:3 and +0.1. These values are indicative of carrier scatterings by acoustic phonons and by the interaction between acoustic and optical phonons, respectively. The maximum power factor obtained for the isotropic MA sample was 4:1 Â 10 À3 W m À1 K À2 at 310 K and this was about twice the 2:1 Â 10 À3 W m À1 K À2 at 440 K obtained for the anisotropic VBM-HPT sample.

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Retraction:Fine Measurement of Thermal Conductivity for (Bi<SUB>0.5</SUB>Sb<SUB>1.5</SUB>)Te<SUB>3</SUB> Compounds

Cited by 10 publications

References 8 publications

Preparation of Single-Phase ZnSb Thermoelectric Materials Using a Mechanical Grinding Process

Preparation of Single-Phase ZnSb Thermoelectric Materials Using a Mechanical Grinding Process

Preparation of Single Phase β-Zn<SUB>4</SUB>Sb<SUB>3</SUB> Thermoelectric Materials by Mechanical Grinding Process

Thermoelectric Properties of Bi<SUB>2</SUB>Te<SUB>3</SUB>-Related Materials Finely Grained by Mechanical Alloying and High Pressure Torsion

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Retraction:Fine Measurement of Thermal Conductivity for (Bi<SUB>0.5</SUB>Sb<SUB>1.5</SUB>)Te<SUB>3</SUB> Compounds

Cited by 10 publications

References 8 publications

Preparation of Single-Phase ZnSb Thermoelectric Materials Using a Mechanical Grinding Process

Preparation of Single-Phase ZnSb Thermoelectric Materials Using a Mechanical Grinding Process

Preparation of Single Phase &beta;-Zn<SUB>4</SUB>Sb<SUB>3</SUB> Thermoelectric Materials by Mechanical Grinding Process

Thermoelectric Properties of Bi<SUB>2</SUB>Te<SUB>3</SUB>-Related Materials Finely Grained by Mechanical Alloying and High Pressure Torsion

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Preparation of Single Phase β-Zn<SUB>4</SUB>Sb<SUB>3</SUB> Thermoelectric Materials by Mechanical Grinding Process