Measuring Transport Numbers for Lithium Isotopes in the Li<sub>3</sub>AlN<sub>2</sub>Solid Electrolyte

Bogomolov, M. Yu.; Obrosov, V. P.; Баталов, Н. Н.; Surin, A. A.; Суриков, В. Т.

doi:10.1023/b:ruel.0000032020.99752.a1

Cited by 2 publications

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“…4 These interesting properties make them potential materials for use in the development of solid-state illumination, optoelectronic, and electrochemical applications. [5][6][7] Li 3 GaN 2 is also an interesting material for GaN singlecrystal growth. 8,9 They are technologically important materials, with a bandgap in the ultraviolet region, which can be used as alternatives to aluminum nitride and gallium nitride.…”

Section: Introductionmentioning

confidence: 99%

Optical Study of Filled Tetrahedral Compounds Li3AlN2 and Li3GaN2

Dadsetani

Namjoo

Nejati

2010

Journal of Elec Materi

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A detailed analysis of the optical properties of filled tetrahedral semiconductors Li 3 AlN 2 and Li 3 GaN 2 has been performed, using the full potential linearized augmented plane wave method within the density functional theory. The real and imaginary parts of the dielectric function e(x), the optical absorption coefficient I(x), the reflectivity R(x), and the electron energy loss function are calculated within the random phase approximation. The interband transitions responsible for the structures in the spectra are specified. Looking at optical matrix element, we note that the major peaks are dominated by transition from metal s, N 2p states to N 2p, Ga 3d states. The theoretical calculated optical properties and electron energy loss spectrum yield a static dielectric constant of 5.34 and a plasmon energy of 19.47 eV for Li 3 GaN 2 . In the Li 3 AlN 2 compound, the static dielectric constant decreases to 4.75 and yields a plasmon energy of 18.5 eV. The effect of spin-orbit coupling on the optical properties is also investigated and found to be quite small, especially in the low-energy region. In order to check the reliability of our calculations, analogous results obtained for Be 3 N 2 in the same structure [space group Ia3(206)] are included in this work.

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Section: Introductionmentioning

confidence: 99%

Optical Study of Filled Tetrahedral Compounds Li3AlN2 and Li3GaN2

Dadsetani

Namjoo

Nejati

2010

Journal of Elec Materi

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“…Therefore, Li 3 AlN 2 is also known as a filled tetrahedral semiconductor with high thermal conductivity, and large bulk modulus . So, Li 3 AlN 2 is commonly used in optoelectronic and electrochemical materials . However, there are no reports about defect‐related luminescent properties of Li 3 AlN 2 .…”

Section: Introductionmentioning

confidence: 99%

Li₃AlN₂—a self‐activated yellow light emitting wide‐bandgap semiconductor used for LEDs

Ding

Long

et al. 2017

J Am Ceram Soc

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In allusion to the problems existing in the defect-related luminescent materials, a series self-activated light emitting semiconductors of Li 3 AlN 2 : R (R=0, Na + , Mg 2+ , Si 4+ , Tb 3+ , Eu 3+ ) have been successfully synthesized by sample-pressure sintering. Under the excitation at 422 nm, a yellow light peaked at 580 nm have been observed in the host lattice of Li 3 AlN 2 . The crystal structure and the electron structure of Li 3 AlN 2 have been measured to investigate the defect-related luminescent properties of Li 3 AlN 2 using the Rietveld refinement on the basic of X-ray diffraction data and the density functional theory (DET). The results show that Li 3 AlN 2 crystallizes in cubic phase with full filled edge-shared (Al/Li)N 4 tetrahedrons and is a wide-bandgap semiconductor. The impurity defects produced by ions substitution have also been investigated, which leads to the red-shift of the emission peak. Finally, the photoluminescence excitation (PLE) spectrum of Li 3 AlN 2 with two excitation bands peaked at 300 nm and 422 nm has been detected, and the latter matches well with near-UV LED chips. The thermal stability shows that integral intensity of Li 3 AlN 2 at 150°C still has 60% of the initial intensity at room temperature. The results indicate their potential applications as the LED used phosphors. K E Y W O R D S nitrides, phosphors, semiconductors

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Measuring Transport Numbers for Lithium Isotopes in the Li₃AlN₂Solid Electrolyte

Cited by 2 publications

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Optical Study of Filled Tetrahedral Compounds Li3AlN2 and Li3GaN2

Optical Study of Filled Tetrahedral Compounds Li3AlN2 and Li3GaN2

Li₃AlN₂—a self‐activated yellow light emitting wide‐bandgap semiconductor used for LEDs

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Measuring Transport Numbers for Lithium Isotopes in the Li3AlN2Solid Electrolyte

Cited by 2 publications

References 1 publication

Optical Study of Filled Tetrahedral Compounds Li3AlN2 and Li3GaN2

Optical Study of Filled Tetrahedral Compounds Li3AlN2 and Li3GaN2

Li3AlN2—a self‐activated yellow light emitting wide‐bandgap semiconductor used for LEDs

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Measuring Transport Numbers for Lithium Isotopes in the Li₃AlN₂Solid Electrolyte

Li₃AlN₂—a self‐activated yellow light emitting wide‐bandgap semiconductor used for LEDs