2015
DOI: 10.1039/c4ee01320d
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Measuring thermoelectric transport properties of materials

Abstract: In this review we discuss considerations regarding the common techniques used for measuring thermoelectric transport properties necessary for calculating the thermoelectric figure of merit, zT.Advice for improving the data quality in Seebeck coefficient, electrical resistivity, and thermal conductivity (from flash diffusivity and heat capacity) measurements are given together with methods for identifying possible erroneous data. Measurement of the Hall coefficient and calculation of the charge carrier concentr… Show more

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Cited by 307 publications
(271 citation statements)
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“…[1][2][3][4] The thermoelectric conversion efficiency of a material depends on its dimensionless figure of merit ZT, defined as ZT = α 2 σT/κ, where α, σ, κ and T are the Seebeck coefficient, electrical conductivity, thermal conductivity and absolute temperature, respectively. 5,6 A great variety of thermoelectric materials have been developed and thoroughly studied, [7][8][9] but industrial applications are still dominated by bismuth telluride (Bi 2 Te 3 )-based alloys. 10 Therefore, extensive studies have been devoted to the enhancement of their properties.…”
Section: Introductionmentioning
confidence: 99%
“…[1][2][3][4] The thermoelectric conversion efficiency of a material depends on its dimensionless figure of merit ZT, defined as ZT = α 2 σT/κ, where α, σ, κ and T are the Seebeck coefficient, electrical conductivity, thermal conductivity and absolute temperature, respectively. 5,6 A great variety of thermoelectric materials have been developed and thoroughly studied, [7][8][9] but industrial applications are still dominated by bismuth telluride (Bi 2 Te 3 )-based alloys. 10 Therefore, extensive studies have been devoted to the enhancement of their properties.…”
Section: Introductionmentioning
confidence: 99%
“…The unusual departure from the typical trend of acoustic-phonon scattering is associated with the steep increase in thermopower measurements at high temperature above 750 K (Fig.2b). We tentatively attribute this anomalous behavior to uncertainties in the ZEM measurement method, where thermopower is often overestimated at high temperatures due to cold-finger effects [26][27][28][29] (overestimation could be as large as >10% [26,29,30]) and the high temperature reactivity of Type S thermocouples with chalcogenides [28]. We use a measurement method where such artifacts are avoided (see Methods).…”
mentioning
confidence: 99%
“…10,26 The short response time is attributed to high thermal diffusivity and low heat capacity owing to the use of the MWCNT-PANI composite. 35 The fabrication of self-powered MF sensing devices is a challenge in the development of sustainable flexible sensors. In principle, the pressure applied to the sensor can be measured without any additional power supply because of the thermoelectric temperature-sensing mechanism.…”
Section: Resultsmentioning
confidence: 99%
“…When a temperature gradient is applied to the thermoelectric MWCNT-PANI material, electrons in the higher-temperature region have higher kinetic energy than their Fermi level and diffuse to the lower-temperature region, thus generating a potential difference. 35 According to this thermoelectric mechanism, the output voltage (V therm ) of the temperature sensor is defined as V therm ¼ S T DT, where S T is the Seebeck coefficient and ΔT is the temperature gradient on the device. 10,36 As shown in Figure 3b, a linear I-V curve is obtained when a temperature gradient is applied.…”
Section: Resultsmentioning
confidence: 99%