Measuring the Thermal Resistance in Light Emitting Diodes Using a Transient Thermal Analysis Technique

Understanding multi-domain compact modeling of light-emitting diodes

“…In the dynamic thermal model shown in Figure 12, the power to be dissipated P heat is represented as temperaturedependent thermal current source, node voltages represent temperature and resistance-capacitance (RC) network represents thermal resistance and capacitance. The thermal RC network from junction-to-ambient represents thermal properties of the thermal-interface-materials from junction-to-ambient (Lai et al, 2015;Natarajan et al, 2013). LED package thermal RC network from junction-to-heat sink is represented as lumped resistance R jHS and capacitance C jHS in the compact thermal model shown in Figure 13, a lumped thermal RC model reduces the complexity of computation and representation posed by distributed RC models.…”

Transient multiexponential signals analysis using Bayesian deconvolution

“…R junction , C junction , R attach , C attach , R slug , C slug , R grease , C grease , R sink , C sink are the thermal resistance and capacitance of junction, die attach, heat slug, thermal grease and heat sink respectively. Then, each RC section can be described by time constants τ 1 = R junction C junction , τ 2 = R attach C attach , τ 3 = R slug C slug , τ 4 = R grease C grease and τ 5 = R sink C sink [3].…”

“…The real decay rate can be obtained from the measured data by the structure function evaluation method after direct mathematical transformations from the thermal transient response. More details about the structure function theory and the transient thermal measurement using T3ster ® can be found elsewhere [3,22]. For details, a cumulative structure function based on the thermal RC network (Fig.…”

“…Multiexponential transient signals have played a particularly important role in many areas of science and technology, such as nuclear magnetic resonance for medical diagnosis [1], electronic component reliability study [2], thermal transient characteristics for semiconductor device [3], etc. Generally the measured data of these applications can be accurately modeled by a superposition of exponentials of the form [4] S(τ ) = M i=1 A i exp(−λ i τ ) + n(τ ), (1) where M is the number of components, A i and λ i are the amplitude of the ith component and the corresponding decay rate respectively.…”

Multi-Variable Thermal Modeling of Power Devices Considering Mutual Coupling

“…The forth-order Foster [3,4] and Cauer networks [5,6] are being widely used to describe the thermal response of junction-to-case for power components. Based on the Cauer network, the one-dimensional thermal network can be extended to one or two orders of case-to-heatsink as shown in Figure 1 [7] for thermal analysis.…”