Measuring acid generation efficiency in chemically amplified resists with all three beams

Szmanda, Charles R.; Brainard, Robert L.; Mackevich, Joseph F.; Awaji, Akira; Tanaka, Tsutomu; Yamada, Yutaka; Bohland, John F.; Tedesco, S.; Dal’zotto, B.; Bruenger, W. H.; Torkler, M.; Fallmann, W.; Loeschner, Hans; Kaesmaier, Rainer; Nealey, Paul M.; Pawloski, Adam R.

doi:10.1116/1.591011

Cited by 49 publications

(43 citation statements)

References 24 publications

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“…Other literature reported C values for TPS-T in a PHOST-like matrix are in the range from 0.037 to 0.055 cm 2 /mJ. [8][9][10] Obviously, the values found in this model revision are somewhat lower than those reported in literature. However, the effect of improving the exposure intensity model on the calculated C parameter is clear.…”

Section: Proposed Algorithm For Extracting the Dill C Parameter From contrasting

confidence: 78%

“…Numerous techniques have been investigated in the quest to measure an accurate Dill C rate constant, including methods such as on-wafer fluorescence spectroscopy [1][2][3] , solution fluorescence spectroscopy [4][5][6] , and a standard addition method similar to conventional acid-base titration [6][7][8][9][10] . Despite their successes, these techniques nevertheless suffer from a variety of flaws.…”

Section: Introductionmentioning

confidence: 99%

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Measurement of photoacid generation kinetics in photoresist thin films via capacitance techniques

Berger

Henderson

2003

Advances in Resist Technology and Processing XX

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A novel technique for determining the Dill C rate constant for photoacid generation has been investigated. This technique involves using capacitance measurements of interdigitated electrodes (IDE) coated with chemically amplified resist to monitor the generation of photoacid within the resist polymer matrix. It is shown that a linear relationship exists between measured capacitance of the IDE and photoacid or PAG concentration within the polymer matrix. Based on this linear relationship, a method is developed for calculating the Dill C parameter for chemically amplified resists based on interdigitated electrode capacitance data. This approach is demonstrated by measuring the Dill C parameter for acid generation using 248 nm exposure of triphenylsulfonium triflate photoacid generator in a poly(p-hydroxystyrene) matrix. A Dill C parameter value of 0.0445 was calculated using this capacitance method which is in good agreement with other literature reported values for this PAG.

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Section: Proposed Algorithm For Extracting the Dill C Parameter From contrasting

confidence: 78%

Section: Introductionmentioning

confidence: 99%

Measurement of photoacid generation kinetics in photoresist thin films via capacitance techniques

Berger

Henderson

2003

Advances in Resist Technology and Processing XX

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“…The sensitivity in the model was changed by varying the base loading while keeping all other parameters fixed. We note that the base-loading method for varying sensitivity is often used in experimental studies as well [13][14][15]. The modeling results show that resist improvement relative to the photon noise limit is still possible.…”

Section: Ler Limitationsmentioning

confidence: 89%

Critical challenges for EUV resist materials

et al. 2011

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Although Extreme ultraviolet lithography (EUVL) is now well into the commercialization phase, critical challenges remain in the development of EUV resist materials. The major issue for the 22-nm half-pitch node remains simultaneously meeting resolution, line-edge roughness (LER), and sensitivity requirements. Although several materials have met the resolution requirements, LER and sensitivity remain a challenge. As we move beyond the 22-nm node, however, even resolution remains a significant challenge. Chemically amplified resists have yet to demonstrate the required resolution at any speed or LER for 16-nm half pitch and below. Going to non-chemically amplified resists, however, 16-nm resolution has been achieved with a LER of 2 nm but a sensitivity of only 70 mJ/cm 2 .

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“…The resist sensitivity in the model was changed by varying the base loading while keeping all other parameters fixed. We note that the base-loading method for varying sensitivity is often used in experimental studies as well [11][12][13]. The modeling results show that resist improvement relative to the photon noise limit is still possible.…”

Section: Photon Noise Limitmentioning

confidence: 89%