Measurements of the optical absorption coefficient of Ar 8+ ion implanted silicon layers using the photothermal radiometry and the modulated free carrier absorption methods

Chrobák, L; Maliński, M.; Pawlak, M.

doi:10.1016/j.infrared.2014.10.009

Cited by 15 publications

(6 citation statements)

References 17 publications

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“…For Ar 8+ -ion-implanted silicon, spectral characteristics of the PTR signal appear in [6] and for O 6+ -ion-implanted silicon those can be found in [7]. The observed decrease in the plasma component of the PTR signal was interpreted as a result of not only a strong decrease in carrier lifetime in the implanted layer but also a strong increase in the optical absorption coefficient of the implanted layer.…”

Section: Introductionmentioning

confidence: 87%

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$$\hbox {Au}^{2+}$$ Au 2 + -Implanted Regions in Silicon Visualized Using a Modulated Free-Carrier Absorption Method

et al. 2017

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Silicon samples were implanted with Au 2+ ions of energy 100 keV and doses of 10 14 cm −2 . The area of the implanted region was 2 mm × 2 mm. The size of the Si substrate samples was 5 mm × 5 mm × 0.4 mm. Spatial distributions of the amplitude and profiles of the modulated free-carrier absorption (MFCA) signal of the implanted silicon samples were recorded and analyzed. The data were obtained using an experimental setup built specifically for MFCA amplitude mapping and measurements of frequency characteristics. For example, the maps and profiles showed that for 520 nm laser illumination, the MFCA amplitude in the implanted region was considerably smaller than that for the substrate. The values of the amplitude of the MFCA signal from the implanted region depended on the wavelength of illuminating light. They convey information related to the optical absorption coefficient of the implanted layers.

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Section: Introductionmentioning

confidence: 87%

“…Results of investigations on the influence of Ar 8+ -and O 6+ -ion implantation in silicon on the PTR signal were presented in [5][6][7]. For Ar 8+ -ion-implanted silicon, spectral characteristics of the PTR signal appear in [6] and for O 6+ -ion-implanted silicon those can be found in [7].…”

Section: Introductionmentioning

confidence: 99%

$$\hbox {Au}^{2+}$$ Au 2 + -Implanted Regions in Silicon Visualized Using a Modulated Free-Carrier Absorption Method

et al. 2017

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“…The spectra have been measured with the same spectroscopic experimental set-up which has been described elsewhere [29,30]. The amorphization level of silicon can be measured with the Photo-thermal Radiometry or Modulated Free Carrier Absorption methods described elsewhere [31,32]. The optical Uoc voltage spectra of the solar cell are presented in Fig.…”

Section: Experimental Setup and Resultsmentioning

confidence: 99%

Chosen Aspects Of Investigations Of Solar Cells With The Laser Beam Induced Current Technique

Chrobák¹,

Madej²,

Maliński³

2015

Metrology and Measurement Systems

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This paper presents maps of spatial distributions of the short circuit current Isc(x,y) and the open circuit voltage Uoc(x,y) of the investigated low cost solar cells. Visible differences in values of these parameters were explained by differences in the serial and shunt resistances determined for different points of solar cells from measurements of I−V characteristics. The spectral dependence of the photo voltage of solar cell is also shown, discussed and interpreted in the model of amorphous and crystal silicon.

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“…The material's thermal properties (D s , k s ) were evaluated by the use of a least-squares fitting procedure of the experimental data [39,40] collected in the form of the amplitude and phase dependence on the modulation frequency (f ) of the pump beam. During the fitting, the thermal conductivity and diffusivity were given trial values to get the best fit [41,42]. The fitting procedure was then repeated taking into account the materials' thermal properties by the relation describing their dependence on material porosity [15], Equation 1:…”

Section: Sample Characterizationmentioning

confidence: 99%

The Effect of Cerium Ions on the Structure, Porosity and Electrochemical Properties of Si/Zr-Based Hybrid Sol-Gel Coatings Deposited on Aluminum

Rodič

Katić

Korte

et al. 2018

Metals

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This study was focused on the synthesis and characterization of Si/Zr-based hybrid sol-gel coatings with and without the addition of cerium(III) ions. The coatings were deposited on aluminum aiming to act as an effective and ecologically harmless alternative to toxic chromate coatings. The chemical composition, structure, thermal properties and porosity of the non-doped and Ce-doped coatings containing various Zr contents were examined by Raman spectroscopy and photothermal beam deflection spectroscopy. The corrosion properties of the coated aluminum substrates were studied using AC and DC electrochemical methods in 0.1 M NaCl electrolyte solution. Barrier and protecting properties of the coatings were monitored upon long-term immersion in chloride solution using electrochemical impedance spectroscopy. The effect of cerium ions was twofold: on the formation of a more condensed Si−O−Zr network structure and on the formation of Ce-based deposits, which diminish the rate of cathodic reaction at the coating/metal interface. These effects acted synergistically and resulted in the creation of the coatings with effective barrier and active corrosion protection.

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Measurements of the optical absorption coefficient of Ar 8+ ion implanted silicon layers using the photothermal radiometry and the modulated free carrier absorption methods

Cited by 15 publications

References 17 publications

$$\hbox {Au}^{2+}$$ Au 2 + -Implanted Regions in Silicon Visualized Using a Modulated Free-Carrier Absorption Method

$$\hbox {Au}^{2+}$$ Au 2 + -Implanted Regions in Silicon Visualized Using a Modulated Free-Carrier Absorption Method

Chosen Aspects Of Investigations Of Solar Cells With The Laser Beam Induced Current Technique

The Effect of Cerium Ions on the Structure, Porosity and Electrochemical Properties of Si/Zr-Based Hybrid Sol-Gel Coatings Deposited on Aluminum

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